公开(公告)号：US20250022955A1

公开(公告)日：2025-01-16

申请号：US18904444

申请日：2024-10-02

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Hong Li ,  Erica L. Poelstra

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H01L21/764 ,  H01L21/8234 ,  H01L23/49 ,  H01L23/528 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H10B12/00 ,  H10B63/00

Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.

公开(公告)号：US12142680B2

公开(公告)日：2024-11-12

申请号：US17317636

申请日：2021-05-11

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Hong Li ,  Erica L. Poelstra

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H01L21/8234 ,  H01L23/49 ,  H01L23/528 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H10B12/00 ,  H10B63/00 ,  H01L21/764

Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.

公开(公告)号：US20240365538A1

公开(公告)日：2024-10-31

申请号：US18765605

申请日：2024-07-08

Applicant: Micron Technology, Inc.

Inventor： Hong Li ,  Ramaswamy Ishwar Venkatanarayanan ,  Sanh D. Tang ,  Erica L. Poelstra

IPC: H10B12/00 ,  G11C11/402 ,  H01L23/49 ,  H01L23/538 ,  H01L29/66 ,  H01L29/78

CPC classification number: H10B12/488 ,  G11C11/4023 ,  H01L23/49 ,  H01L23/538 ,  H01L29/66666 ,  H01L29/7827 ,  H10B12/053 ,  H10B12/30 ,  H10B12/31 ,  H10B12/315 ,  H10B12/34

Abstract: Some embodiments include a method of forming an integrated assembly. A structure is provided to have conductive lines, and to have rails over the conductive lines and extending in a direction which crosses the conductive lines. Each of the rails includes pillars of semiconductor material. The rails have sidewall surfaces along spaces between the rails. The pillars have upper segments, middle segments and lower segments. First-material liners are formed along the sidewall surfaces of the rails. A second material is formed over the liners. First sections of the liners are removed to form gaps between the second material and the sidewall surfaces of the rails. Second sections of the liners remain under the gaps. Conductive material is formed within the gaps. The conductive material is configured as conductive lines which are along the middle segments of the pillars.

公开(公告)号：US12069852B2

公开(公告)日：2024-08-20

申请号：US17862659

申请日：2022-07-12

Applicant: Micron Technology, Inc.

Inventor： Hong Li ,  Ramaswamy Ishwar Venkatanarayanan ,  Sanh D. Tang ,  Erica L. Poelstra

IPC: H10B12/00 ,  G11C11/402 ,  H01L23/49 ,  H01L23/538 ,  H01L29/66 ,  H01L29/78

CPC classification number: H10B12/488 ,  G11C11/4023 ,  H01L23/49 ,  H01L23/538 ,  H01L29/66666 ,  H01L29/7827 ,  H10B12/053 ,  H10B12/30 ,  H10B12/31 ,  H10B12/315 ,  H10B12/34

Abstract: Some embodiments include a method of forming an integrated assembly. A structure is provided to have conductive lines, and to have rails over the conductive lines and extending in a direction which crosses the conductive lines. Each of the rails includes pillars of semiconductor material. The rails have sidewall surfaces along spaces between the rails. The pillars have upper segments, middle segments and lower segments. First-material liners are formed along the sidewall surfaces of the rails. A second material is formed over the liners. First sections of the liners are removed to form gaps between the second material and the sidewall surfaces of the rails. Second sections of the liners remain under the gaps. Conductive material is formed within the gaps. The conductive material is configured as conductive lines which are along the middle segments of the pillars.

公开(公告)号：US20210265500A1

公开(公告)日：2021-08-26

申请号：US17317636

申请日：2021-05-11

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Hong Li ,  Erica L. Poelstra

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/10 ,  H01L23/528 ,  H01L29/06 ,  H01L21/308 ,  H01L21/311 ,  H01L27/108 ,  H01L27/24 ,  H01L21/762 ,  H01L23/49

Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.

公开(公告)号：US20210028177A1

公开(公告)日：2021-01-28

申请号：US17070759

申请日：2020-10-14

Applicant: Micron Technology, Inc.

Inventor： Hong Li ,  Ramaswamy Ishwar Venkatanarayanan ,  Sanh D. Tang ,  Erica L. Poelstra

IPC: H01L27/108 ,  H01L23/49 ,  H01L23/538 ,  G11C11/402 ,  H01L29/78 ,  H01L29/66

Abstract: Some embodiments include a method of forming an integrated assembly. A structure is provided to have conductive lines, and to have rails over the conductive lines and extending in a direction which crosses the conductive lines. Each of the rails includes pillars of semiconductor material. The rails have sidewall surfaces along spaces between the rails. The pillars have upper segments, middle segments and lower segments. First-material liners are formed along the sidewall surfaces of the rails. A second material is formed over the liners. First sections of the liners are removed to form gaps between the second material and the sidewall surfaces of the rails. Second sections of the liners remain under the gaps. Conductive material is formed within the gaps. The conductive material is configured as conductive lines which are along the middle segments of the pillars.