公开(公告)号：US11935782B2

公开(公告)日：2024-03-19

申请号：US17653790

申请日：2022-03-07

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Marko Milojevic ,  John A. Smythe ,  Timothy A. Quick ,  Sumeet C. Pandey

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/67 ,  H01L23/522 ,  H01L23/528 ,  H01L23/538 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L21/76843 ,  H01L21/28247 ,  H01L21/67069 ,  H01L21/76814 ,  H01L21/76853 ,  H01L21/76855 ,  H01L23/5226 ,  H01L23/5228 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5386 ,  H01L29/401 ,  H01L29/4232 ,  H01L29/66795

Abstract: A method of forming a structure comprises forming a pattern of elongate features extending vertically from a base structure. Conductive material is formed on the elongate features. After completing the forming of the pattern of elongate features, the elongate features, the conductive material, or both is (are) exposed to at least one surface treatment gas. The at least one surface treatment gas comprises at least one species formulated to diminish attractive or cohesive forces at a surface of the conductive material. Apparatus and additional methods are also described.

公开(公告)号：US20200251349A1

公开(公告)日：2020-08-06

申请号：US16269309

申请日：2019-02-06

Applicant: Micron Technology, Inc.

Inventor： Marko Milojevic ,  John A. Smythe, III

IPC: H01L21/321 ,  H01L21/3205

Abstract: Systems, apparatuses, and methods related to reduction of crystal growth resulting from annealing a conductive material are described. An example apparatus includes a conductive material selected to have an electrical resistance that is reduced as a result of annealing. A stabilizing material may be formed over a surface of the conductive material. The stabilizing material may be selected to have properties that include stabilization of the reduced electrical resistance of the conductive material and reduction of a degree of freedom of crystal growth relative to the surface resulting from recrystallization of the conductive material during the annealing.

公开(公告)号：US20220310637A1

公开(公告)日：2022-09-29

申请号：US17216269

申请日：2021-03-29

Applicant: Micron Technology, Inc.

Inventor： Aaron Michael Lowe ,  Zhuo Chen ,  Marko Milojevic ,  Timothy A. Quick ,  Richard J. Hill ,  Scott E. Sills

IPC: H01L27/11514 ,  H01L27/108 ,  H01L27/12 ,  H01L27/13

Abstract: Some embodiments include an integrated transistor having an active region comprising semiconductor material. A conductive gating structure is adjacent to the active region. The conductive gating structure includes an inner region proximate the active region and includes an outer region distal from the active region. The inner region includes a first material containing titanium and nitrogen, and the outer region includes a metal-containing second material. The second material has a higher conductivity than the first material. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20220238340A1

公开(公告)日：2022-07-28

申请号：US17653790

申请日：2022-03-07

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Marko Milojevic ,  John A. Smythe ,  Timothy A. Quick ,  Sumeet C. Pandey

IPC: H01L21/28 ,  H01L29/40 ,  H01L29/66 ,  H01L29/423

Abstract: A method of forming a structure comprises forming a pattern of elongate features extending vertically from a base structure. Conductive material is formed on the elongate features. After completing the forming of the pattern of elongate features, the elongate features, the conductive material, or both is (are) exposed to at least one surface treatment gas. The at least one surface treatment gas comprises at least one species formulated to diminish attractive or cohesive forces at a surface of the conductive material. Apparatus and additional methods are also described.

公开(公告)号：US11270909B2

公开(公告)日：2022-03-08

申请号：US16773636

申请日：2020-01-27

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Marko Milojevic ,  John A. Smythe ,  Timothy A. Quick ,  Sumeet C. Pandey

IPC: H01L21/768 ,  H01L21/67 ,  H01L23/522 ,  H01L23/528 ,  H01L23/538

Abstract: A method of forming a structure comprises forming a pattern of elongate features extending vertically from a base structure. Conductive material is formed on the elongate features. After completing the forming of the pattern of elongate features, the elongate features, the conductive material, or both is (are) exposed to at least one surface treatment gas. The at least one surface treatment gas comprises at least one species formulated to diminish attractive or cohesive forces at a surface of the conductive material. Apparatus and additional methods are also described.

公开(公告)号：US20210233810A1

公开(公告)日：2021-07-29

申请号：US16773636

申请日：2020-01-27

Applicant: Micron Technology, Inc.

Inventor： Gurtej S. Sandhu ,  Marko Milojevic ,  John A. Smythe ,  Timothy A. Quick ,  Sumeet C. Pandey

IPC: H01L21/768 ,  H01L21/67

Abstract: A method of forming a structure comprises forming a pattern of elongate features extending vertically from a base structure. Conductive material is formed on the elongate features. After completing the forming of the pattern of elongate features, the elongate features, the conductive material, or both is (are) exposed to at least one surface treatment gas. The at least one surface treatment gas comprises at least one species formulated to diminish attractive or cohesive forces at a surface of the conductive material. Apparatus and additional methods are also described.

公开(公告)号：US20150295171A1

公开(公告)日：2015-10-15

申请号：US14726779

申请日：2015-06-01

Applicant: Micron Technology, Inc.

Inventor： Dale W. Collins ,  Marko Milojevic ,  Scott E. Sills ,  Si-Young Park

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16

Abstract: Memory cells (e.g., CBRAM cells) include an ion source material over an active material and an electrode comprising metal silicide over the ion source material. The ion source material may include at least one of a chalcogenide material and a metal. Apparatuses, such as systems and devices, include a plurality of such memory cells. Memory cells include an adhesion material of metal silicide between a ion source material and an electrode of elemental metal. Methods of forming a memory cell include forming a first electrode, forming an active material, forming an ion source material, and forming a second electrode including metal silicide over the metal ion source material. Methods of adhering a material including copper and a material including tungsten include forming a tungsten silicide material over a material including copper and treating the materials.

Abstract translation: 存储单元（例如，CBRAM单元）包括活性材料上的离子源材料和在离子源材料上的包含金属硅化物的电极。 离子源材料可以包括硫族化物材料和金属中的至少一种。 装置，例如系统和装置，包括多个这样的存储单元。 存储单元包括在离子源材料和元素金属电极之间的金属硅化物的粘附材料。 形成存储单元的方法包括形成第一电极，形成活性材料，形成离子源材料，以及在金属离子源材料上形成包括金属硅化物的第二电极。 包括铜和包括钨的材料的材料的粘合方法包括在包括铜的材料上形成硅化钨材料并处理材料。