公开(公告)号：US11201154B2

公开(公告)日：2021-12-14

申请号：US16729076

申请日：2019-12-27

Applicant: Micron Technology, Inc.

Inventor： Song Guo ,  Sanh D. Tang ,  Shen Hu ,  Yan Li ,  Nicholas R. Tapias

IPC: G11C11/24 ,  H01L27/108 ,  G11C11/408

Abstract: A method of forming an apparatus comprises forming pillar structures extending from a base material. Upper portions of the pillar structures may exhibit a lateral width that is relatively greater than a lateral width of lower portions of the pillar structures. The method also comprises forming access lines laterally adjacent to the lower portions of the pillar structures and forming digit lines above upper surfaces of the pillar structures. Memory devices and electronic systems are also described.

公开(公告)号：US20210057266A1

公开(公告)日：2021-02-25

申请号：US16549594

申请日：2019-08-23

Applicant: Micron Technology, Inc.

Inventor： Vivek Yadav ,  Shen Hu ,  Kangle Li ,  Sanjeev Sapra

IPC: H01L21/762 ,  H01L27/108 ,  H01L21/02 ,  H01L21/67

Abstract: An example method includes patterning a working surface of a semiconductor wafer. The example method includes performing a first deposition of a dielectric material in high aspect ratio trenches. The example method further includes performing a high pressure, high temperature vapor etch to recess the dielectric material in the trenches and performing a second deposition of the dielectric material to continue filling the trenches.

公开(公告)号：US10930499B2

公开(公告)日：2021-02-23

申请号：US16379085

申请日：2019-04-09

Applicant: Micron Technology, Inc.

Inventor： Nicholas R. Tapias ,  Sanjeev Sapra ,  Anish A. Khandekar ,  Shen Hu

IPC: H01L21/02 ,  H01L21/762 ,  H01L21/8238

Abstract: Methods, apparatuses, and systems related to semiconductor structure formation are described. An example method includes forming an opening through silicon (Si) material, formed over a semiconductor substrate, to a first depth to form pillars of Si material. The example method further includes depositing an isolation material within the opening to fill the opening between the Si pillars. The example method further includes removing a portion of the isolation material from between the pillars to a second depth to create a second opening between the pillars and defining inner sidewalls between the pillars. The example method further includes depositing an enhancer material over a top surface of the pillars and along the inner sidewalls of the pillars down to a top portion of the isolation material.

公开(公告)号：US20200328080A1

公开(公告)日：2020-10-15

申请号：US16379085

申请日：2019-04-09

Applicant: Micron Technology, Inc.

Inventor： Nicholas R. Tapias ,  Sanjeev Sapra ,  Anish A. Khandekar ,  Shen Hu

IPC: H01L21/02 ,  H01L21/762

Abstract: Methods, apparatuses, and systems related to semiconductor structure formation are described. An example method includes forming an opening through silicon (Si) material, formed over a semiconductor substrate, to a first depth to form pillars of Si material. The example method further includes depositing an isolation material within the opening to fill the opening between the Si pillars. The example method further includes removing a portion of the isolation material from between the pillars to a second depth to create a second opening between the pillars and defining inner sidewalls between the pillars. The example method further includes depositing an enhancer material over a top surface of the pillars and along the inner sidewalls of the pillars down to a top portion of the isolation material.