公开(公告)号：US20090050875A1

公开(公告)日：2009-02-26

申请号：US12195088

申请日：2008-08-20

申请人： Min-Ho Kim ,  Martin F. Schubert ,  Jong Kyu Kim ,  E. Fred Schubert ,  Yongjo Park ,  Cheolsoo Sone ,  Sukho Yoon

发明人： Min-Ho Kim ,  Martin F. Schubert ,  Jong Kyu Kim ,  E. Fred Schubert ,  Yongjo Park ,  Cheolsoo Sone ,  Sukho Yoon

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/04 ,  H01L33/32

摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.

摘要翻译： 氮化物半导体发光器件包括n型和p型氮化物半导体层，以及设置在n型和p型氮化物半导体层之间的有源层，并且具有堆叠结构，其中多个量子势垒层和一个 或更多量子阱层交替堆叠。 量子势垒层的净极化小于或等于量子阱层的净极化。 可以提供氮化物半导体发光器件，其可以通过最小化量子势垒层和量子阱层之间的净极化失配而在高电流下实现高效率。 此外，可以通过降低量子阱层的能量级弯曲的程度来实现高效率的氮化物半导体发光器件。

公开(公告)号：US07478848B2

公开(公告)日：2009-01-20

申请号：US11799226

申请日：2007-04-30

申请人： Min-Ho Kim

发明人： Min-Ho Kim

IPC分类号： E05B3/00

CPC分类号： E05B85/18 ,  E05B77/06 ,  Y10S292/22 ,  Y10T292/57 ,  Y10T292/68

摘要： The present invention provides a door opening prevention device of a vehicle door outer handle. The door opening prevention device includes: a handle base having a lever mounting part; a lever rotatably mounted on the lever mounting part, having a return spring and having a locking slot formed in a shaft of the lever so as to pass through the shaft; a lever cover mounted on the lever mounting part so as to be provided outside the lever and having an elastic rotary member; a locking arm formed in the elastic rotary member, the locking arm being inserted into the locking slot when the elastic rotary member is rotated. The present device can reliably prevent the door from being opened in the event of a broadside collision.

摘要翻译： 本发明提供一种车门外手柄的防开门装置。 所述开门防止装置包括：手柄基座，具有杠杆安装部; 杆，可旋转地安装在杠杆安装部上，具有复位弹簧，并且具有形成在杆的轴中以便穿过轴的锁定槽; 杠杆盖，其安装在所述杠杆安装部上，以便设置在所述杆的外部并具有弹性旋转构件; 形成在所述弹性旋转构件中的锁定臂，当所述弹性旋转构件旋转时，所述锁定臂插入所述锁定槽。 本装置能够可靠地防止在发生侧面碰撞的情况下打开门。

公开(公告)号：US08502266B2

公开(公告)日：2013-08-06

申请号：US12923195

申请日：2010-09-08

申请人： Min-Ho Kim ,  Martin F. Schubert ,  Jong Kyu Kim ,  E. Fred Schubert ,  Yongjo Park ,  Cheolsoo Sone ,  Sukho Yoon

发明人： Min-Ho Kim ,  Martin F. Schubert ,  Jong Kyu Kim ,  E. Fred Schubert ,  Yongjo Park ,  Cheolsoo Sone ,  Sukho Yoon

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/04 ,  H01L33/32

摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.

摘要翻译： 氮化物半导体发光器件包括n型和p型氮化物半导体层，以及设置在n型和p型氮化物半导体层之间的有源层，并且具有堆叠结构，其中多个量子势垒层和一个 或更多量子阱层交替堆叠。 量子势垒层的净极化小于或等于量子阱层的净极化。 可以提供氮化物半导体发光器件，其可以通过最小化量子势垒层和量子阱层之间的净极化失配而在高电流下实现高效率。 此外，可以通过降低量子阱层的能量级弯曲的程度来实现高效率的氮化物半导体发光器件。

公开(公告)号：US20120132887A1

公开(公告)日：2012-05-31

申请号：US13064186

申请日：2011-03-09

申请人： Min-Ho Kim ,  Martin F. Schubert ,  Jong Kyu Kim ,  F. Fred Schubert ,  Yongio Park ,  Cheolsoo Sone ,  Sukho Yoon

发明人： Min-Ho Kim ,  Martin F. Schubert ,  Jong Kyu Kim ,  F. Fred Schubert ,  Yongio Park ,  Cheolsoo Sone ,  Sukho Yoon

IPC分类号： H01L33/06

CPC分类号： H01L33/04 ,  H01L33/02 ,  H01L33/32

摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked. An absolute value of a net polarization mismatch between a material, the material having a composition corresponding to an average composition of the superlattice structure, and a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers is less than ⅔ of an absolute value of a net polarization mismatch between AlxG1-xN(0

摘要翻译： 氮化物半导体发光器件包括n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层，并且具有多个量子势垒层和一个或多个量子阱层交替堆叠的结构; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层。 电子阻挡层具有超晶格结构，其中具有不同组成的两层或更多层交替堆叠。 在多个量子势垒层中，材料，具有对应于超晶格结构的平均组成的组成的材料和与电子阻挡层相邻的量子势垒层的材料之间的净偏振失配的绝对值小于 具有等于​​材料的带隙能量和不同于其的组成的Al x G 1-x N（0

公开(公告)号：US20080136199A1

公开(公告)日：2008-06-12

申请号：US11799226

申请日：2007-04-30

申请人： Min-Ho Kim

发明人： Min-Ho Kim

IPC分类号： E05B65/12

CPC分类号： E05B85/18 ,  E05B77/06 ,  Y10S292/22 ,  Y10T292/57 ,  Y10T292/68

摘要： The present invention provides a door opening prevention device of a vehicle door outer handle. The door opening prevention device includes: a handle base having a lever mounting part; a lever rotatably mounted on the lever mounting part, having a return spring and having a locking hole formed in a shaft of the lever so as to pass through the shaft; a lever cover mounted on the lever mounting part so as to be provided outside the lever and having an elastic rotary member; a locking arm formed in the elastic rotary member, the locking arm being inserted into the locking hole when the elastic rotary member is rotated. The present device can reliably prevent the door from being opened in the event of a broadside collision.

摘要翻译： 本发明提供一种车门外手柄的防开门装置。 所述开门防止装置包括：手柄基座，具有杠杆安装部; 杆，可旋转地安装在杠杆安装部上，具有复位弹簧，并且具有形成在杠杆的轴中以便穿过轴的锁定孔; 杠杆盖，其安装在所述杠杆安装部上，以便设置在所述杆的外部并具有弹性旋转构件; 形成在所述弹性旋转构件中的锁定臂，当所述弹性旋转构件旋转时，所述锁定臂插入所述锁定孔。 本装置能够可靠地防止在发生侧面碰撞的情况下打开门。

公开(公告)号：US20070105572A1

公开(公告)日：2007-05-10

申请号：US11594302

申请日：2006-11-08

申请人： Min-Ho Kim

发明人： Min-Ho Kim

IPC分类号： H04Q7/20

CPC分类号： H04L51/24 ,  H04L51/38

摘要： Provided is a method and an apparatus for controlling a NEW MESSAGE alert in a portable wireless terminal. In a sender-side terminal, a NEW MESSAGE alert is set after a message is written. The NEW MESSAGE alert setting is designated at a header of the message. The message having the header with the NEW MESSAGE alert setting is transmitted. In a receiver-side terminal, a message is received and it is determined whether a NEW MESSAGE alert is designated at a header of the received message. If a NEW MESSAGE alert is designated at the header of the received message, the designated NEW MESSAGE alert is generated. Therefore, both a sending user and a receiving user can have equal authority over the NEW MESSAGE alert.

摘要翻译： 提供了一种用于在便携式无线终端中控制新消息警报的方法和装置。 在发送端终端中，在写入消息之后设置NEW MESSAGE警报。 在消息的标题处指定NEW MESSAGE警报设置。 发送带有NEW MESSAGE报警设置的报头的消息。 在接收机侧终端中，接收到消息，并且确定在接收到的消息的头部是否指定了NEW MESSAGE警报。 如果在接收到的消息的头部指定了NEW MESSAGE警报，则生成指定的NEW MESSAGE警报。 因此，发送用户和接收用户都可以对NEW MESSAGE警报具有相同的权限。

公开(公告)号：US06168850A

公开(公告)日：2001-01-02

申请号：US09094137

申请日：1998-06-09

申请人： Min-Ho Kim ,  Jae-Ho Sim

发明人： Min-Ho Kim ,  Jae-Ho Sim

IPC分类号： H01J2900

CPC分类号： H01J29/327 ,  H01J9/2276 ,  H01J9/2278 ,  Y10S430/10 ,  Y10T428/24802

摘要： A composition for a photo-conductive layer and an electron transferring complex system on a color CRT panel having 1-(p-diethylaminophenyl)-1,4,4-triphenyl-1,3-butadiene as an electron donor and a thioxanthene derivative as an electron acceptor in an organic binder dispersion system have not only a high electron transferring capability but also a high electron generating capability so that it is not necessary to add a separate electron generating material.

摘要翻译： 在具有1-（对二乙基氨基苯基）-1,4,4-三苯基-1,3-丁二烯作为电子给体的彩色CRT面板上的光导层和电子转移复合体系的组合物和噻吨衍生物作为 有机粘合剂分散系统中的电子受体不仅具有高电子转移能力，而且具有高电子发生能力，因此不需要添加单独的电子发生材料。

公开(公告)号：US09829983B2

公开(公告)日：2017-11-28

申请号：US14061036

申请日：2013-10-23

申请人： Yoon-Dong Park ,  Won-Joo Kim ,  Young-Gu Jin ,  Dong-Wook Kwon ,  Kyung-Il Kim ,  Min-Ho Kim ,  Gi-Sang Lee ,  Sang-Bo Lee ,  Jin-Kyung Lee ,  Jin-Wuk Choi

发明人： Yoon-Dong Park ,  Won-Joo Kim ,  Young-Gu Jin ,  Dong-Wook Kwon ,  Kyung-Il Kim ,  Min-Ho Kim ,  Gi-Sang Lee ,  Sang-Bo Lee ,  Jin-Kyung Lee ,  Jin-Wuk Choi

IPC分类号： G09G5/00 ,  G06F3/01 ,  G06F3/041 ,  G06F1/32

CPC分类号： G06F3/017 ,  G06F1/3262 ,  G06F3/011 ,  G06F3/0416 ,  G06F2203/04101 ,  G06F2203/04106

摘要： A mobile system may comprise a three-dimensional (3D) image sensor on a first surface of the mobile system configured to perform a first sensing to detect proximity of a subject and a second sensing to recognize a gesture of the subject by acquiring distance information for the subject; and/or a display device on the first surface of the mobile system to display results of the first sensing and the second sensing. A mobile system may comprise a light source unit; a plurality of depth pixels; and/or a plurality of color pixels. The light source unit, the plurality of depth pixels, or the plurality of color pixels may be activated based on an operation mode of the mobile system.

公开(公告)号：US09621868B2

公开(公告)日：2017-04-11

申请号：US14051605

申请日：2013-10-11

申请人： Kyung Il Kim ,  Dong Wook Kwon ,  Min-Ho Kim ,  Gi-Sang Lee ,  Sang Bo Lee ,  Jin Kyung Lee ,  Young Gu Jin ,  Jin Wuk Choi

发明人： Kyung Il Kim ,  Dong Wook Kwon ,  Min-Ho Kim ,  Gi-Sang Lee ,  Sang Bo Lee ,  Jin Kyung Lee ,  Young Gu Jin ,  Jin Wuk Choi

IPC分类号： H04N13/00 ,  G01S17/08 ,  G01S17/89

CPC分类号： H04N13/10 ,  G01S17/08 ,  G01S17/89 ,  H04N13/106 ,  H04N13/15 ,  H04N13/254 ,  H04N13/257

摘要： An image capture method performed by a depth sensor includes; emitting a first source signal having a first amplitude towards a scene, and thereafter emitting a second source signal having a second amplitude different from the first amplitude towards the scene, capturing a first image in response to the first source signal and capturing a second image in response to the second source signal, and interpolating the first and second images to generate a final image.

公开(公告)号：US08546846B2

公开(公告)日：2013-10-01

申请号：US13064186

申请日：2011-03-09

申请人： Min-Ho Kim ,  Martin F. Schubert ,  Jong Kyu Kim ,  F. Fred Schubert ,  Yongio Park ,  Cheolsoo Sone ,  Sukho Yoon

发明人： Min-Ho Kim ,  Martin F. Schubert ,  Jong Kyu Kim ,  F. Fred Schubert ,  Yongio Park ,  Cheolsoo Sone ,  Sukho Yoon

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/02 ,  H01L33/32

摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked. An absolute value of a net polarization mismatch between a material, the material having a composition corresponding to an average composition of the superlattice structure, and a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers is less than ⅔ of an absolute value of a net polarization mismatch between AlxG1-xN(0

摘要翻译： 氮化物半导体发光器件包括n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层，并且具有多个量子势垒层和一个或多个量子阱层交替堆叠的结构; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层。 电子阻挡层具有超晶格结构，其中具有不同组成的两层或更多层交替堆叠。 在多个量子势垒层中，具有与超晶格结构的平均组成对应的组成的材料和与电子阻挡层相邻的量子势垒层的材料之间的净偏振失配的绝对值小于2 / 3的具有等于材料的带隙能量和与其不同的组成的Al x G 1-x N（0