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公开(公告)号:US11699890B2
公开(公告)日:2023-07-11
申请号:US18010468
申请日:2020-08-12
Applicant: Mitsubishi Electric Corporation
Inventor: Tomohiro Kyoto , Daisuke Morita , Kimio Shigihara , Keisuke Furuta
IPC: H01S5/023 , H01S5/0237 , H01S5/024
CPC classification number: H01S5/023 , H01S5/0237 , H01S5/02469
Abstract: A semiconductor laser machine includes a semiconductor laser element including a first end face that emits a laser beam and a second end face that is opposite the first end face; a heat sink; and a sub-mount securing the semiconductor laser element to the heat sink. The sub-mount includes a substrate that serves as a thermal stress reliever, a solder layer joined to the semiconductor laser element, and a junction layer formed between the substrate and the solder layer. Compared with the semiconductor laser element, the substrate is extended in a rearward direction that is from the first end face toward the second end face. As for the solder layer and the junction layer, a portion of at least the solder layer is removed behind the second end face.
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公开(公告)号:US10958043B2
公开(公告)日:2021-03-23
申请号:US17043689
申请日:2018-04-02
Applicant: Mitsubishi Electric Corporation
Inventor: Tomohiro Kyoto , Tomotaka Katsura , Daisuke Morita , Hiroyuki Takeuchi , Yumi Genda
Abstract: A laser device includes a plurality of laser diodes that generate laser light beams having different wavelengths from each other, a partial reflective mirror constituting a resonator along with the laser diodes, a wavelength dispersive element set in the resonator, which combines parts of the laser light beams outputted by the laser diodes to each other, emits the combined parts of the laser light beams as a first laser light beam toward the partial reflective mirror, and emits other parts of the laser light beams as second laser light beams in directions different from the direction toward the partial reflective mirror, and an output detecting unit detecting intensities of the second laser light beams.
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公开(公告)号:US09991666B2
公开(公告)日:2018-06-05
申请号:US14931208
申请日:2015-11-03
Applicant: Mitsubishi Electric Corporation
Inventor: Daisuke Morita
CPC classification number: H01S3/10 , H01S5/0202 , H01S5/12 , H01S5/2018 , H01S5/22 , H01S2301/173 , H01S2301/203
Abstract: A semiconductor laser device includes a substrate, a buffer layer provided on an upper surface of the substrate and formed of InP, a laser element having a ridge structure formed above the buffer layer, and an epi intermediate layer formed of a compound semiconductor containing As and exposed to the outside.
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公开(公告)号:US09923336B2
公开(公告)日:2018-03-20
申请号:US15407530
申请日:2017-01-17
Applicant: Mitsubishi Electric Corporation
Inventor: Kazuhiro Maeda , Masafumi Minami , Naoki Nakamura , Daisuke Morita
CPC classification number: H01S5/2238 , H01S5/0425 , H01S5/2045 , H01S5/22 , H01S5/2205 , H01S5/2213 , H01S5/223 , H01S5/2231 , H01S5/227 , H01S5/2277
Abstract: A laser diode includes a ridge portion, channel portions located adjacent to the ridge portion such that the ridge portion is sandwiched, the channel portions being shorter in height than the ridge portion, terrace portions adjacent to opposite sides of the respective channel portions from the ridge portion and longer in height than the channel portions, supporting portions provided over the respective channel portions, separated from side surfaces of the ridge portion or side surfaces of terrace portions or both, and made of resin, a ceiling portion including first portions provided over the supporting portions and second portions continuous with the first portions and located over the respective channel portions with hollow portions interposed therebetween, the ceiling portion being made of resin, and a metal layer provided over the ceiling portion and connected to an upper surface of the ridge portion.
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