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    Waveguide-coupled vertical cavity laser
    2.
    发明授权
    Waveguide-coupled vertical cavity laser 有权
    波导耦合垂直腔激光器

    公开(公告)号：US09106048B2

    公开(公告)日：2015-08-11

    申请号：US13764223

    申请日：2013-02-11

    申请人： Oracle International Corporation

    发明人： Ashok V. Krishnamoorthy ,  John E. Cunningham ,  Xuezhe Zheng

    IPC分类号： H01S5/02 ,  H01S5/10 ,  H01S5/20 ,  H01S5/026 ,  H01S5/06 ,  H01S5/068 ,  H01S5/183

    CPC分类号： H01S5/026 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0218 ,  H01S5/0612 ,  H01S5/06804 ,  H01S5/1032 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/2045 ,  H01S5/3013

    摘要： An integrated circuit includes an optical source that provides an optical signal to an optical waveguide. In particular, the optical source may be implemented by fusion-bonding a III-V semiconductor to a semiconductor layer in the integrated circuit. In conjunction with surrounding mirrors (at least one of which is other than a distributed Bragg reflector), this structure may provide a cavity with suitable optical gain at a wavelength in the optical signal along a vertical direction that is perpendicular to a plane of the semiconductor layer. For example, the optical source may include a vertical-cavity surface-emitting laser (VCSEL). Moreover, the optical waveguide, defined in the semiconductor layer, may be separated from the optical source by a horizontal gap in the plane of the semiconductor layer. During operation of the optical source, the optical signal may be optically coupled across the gap from the optical source to the optical waveguide.

    摘要翻译： 集成电路包括向光波导提供光信号的光源。 特别地，光源可以通过将III-V半导体熔合到集成电路中的半导体层来实现。 与周围的镜子（其中至少一个不同于分布式布拉格反射器）结合，该结构可以沿着垂直于半导体平面的垂直方向在光信号中的波长处提供适当的光学增益的空腔 层。 例如，光源可以包括垂直腔表面发射激光器（VCSEL）。 此外，限定在半导体层中的光波导可以通过半导体层的平面中的水平间隙与光源分离。 在光源的操作期间，光信号可以在从光源到光波导的间隙上光学耦合。

    Scalable semiconductor waveguide amplifier
    3.
    发明授权
    Scalable semiconductor waveguide amplifier 有权
    可扩展半导体波导放大器

    公开(公告)号：US08049957B2

    公开(公告)日：2011-11-01

    申请号：US11983028

    申请日：2007-11-06

    申请人： Robert Rex Rice ,  Hagop Injeyan

    发明人： Robert Rex Rice ,  Hagop Injeyan

    IPC分类号： H01S5/00 ,  G02B6/02

    CPC分类号： H01S5/50 ,  H01S5/024 ,  H01S5/02423 ,  H01S5/041 ,  H01S5/2045

    摘要： One embodiment of the present method and apparatus encompasses an apparatus that may have: a predetermined length, the self-imaging semiconductor waveguide having first and second opposed sides; quantum wells disposed within the self-imaging semiconductor waveguide along the length of the self-imaging semiconductor waveguide, the quantum wells being formed of a quantum well gain material; microchannel cooler that extends substantially the width of the self-imaging semiconductor waveguide, the microchannel cooler located adjacent the first side of the self-imaging semiconductor waveguide; and a plurality of pump arrays arranged along the microchannel cooler opposed from the first side of the self-imaging semiconductor waveguide; wherein the quantum well gain material is photopumped through the microchannel cooler.

    摘要翻译： 本方法和装置的一个实施例包括可以具有：预定长度的装置，该自成像半导体波导具有第一和第二相对侧; 量子阱沿着自成像半导体波导的长度设置在自成像半导体波导内，量子阱由量子阱增益材料形成; 所述微通道冷却器基本上延伸所述自成像半导体波导的宽度，所述微通道冷却器位于所述自成像半导体波导的所述第一侧附近; 以及沿着所述微通道冷却器布置的多个泵阵列，所述多个泵阵列与所述自成像半导体波导的第一侧相对; 其中量子阱增益材料通过微通道冷却器照射。

    ELECTRICALLY PUMPED LOW-THRESHOLD ULTRA-SMALL PHOTONIC CRYSTAL LASERS
    6.
    发明申请
    ELECTRICALLY PUMPED LOW-THRESHOLD ULTRA-SMALL PHOTONIC CRYSTAL LASERS 有权
    电动泵低功率超小型光子晶体激光器

    公开(公告)号：US20080080579A1

    公开(公告)日：2008-04-03

    申请号：US11777904

    申请日：2007-07-13

    申请人： Axel Scherer

    发明人： Axel Scherer

    IPC分类号： H01S5/34 ,  H01L21/00

    CPC分类号： H01S5/10 ,  B82Y20/00 ,  H01S5/0207 ,  H01S5/0218 ,  H01S5/041 ,  H01S5/0425 ,  H01S5/105 ,  H01S5/18 ,  H01S5/183 ,  H01S5/2045 ,  H01S5/34326 ,  H01S5/4087 ,  H01S5/423

    摘要： The invention is a photonic crystal laser including a photonic crystal slab laser cavity including InGaP/InGaAlP crystalline layers, the InGaP/InGaAlP crystalline layers having a relaxed strain at one or more etched surfaces and a higher strain at a plurality of quantum wells and at a distance from the one or more etched surfaces. The photonic crystal laser also includes electrical pads configured to receive an electrical signal the electrical pads attached to the photonic crystal slab laser cavity via an insulating layer, the photonic crystal laser configured to emit a laser light in response to the electrical signal. In another aspect, the invention features a photonic crystal detector including a photonic crystal slab cavity including InGaP/InGaAlP crystalline layers. In yet another aspect, the invention features a process to fabricate a photonic crystal laser cavity.

    摘要翻译： 本发明是一种包括InGaP / InGaAlP结晶层的光子晶体激光腔的光子晶体激光器，InGaP / InGaAlP结晶层在一个或多个蚀刻表面具有松弛应变，在多个量子阱处具有较高的应变， 距离一个或多个蚀刻表面的距离。 光子晶体激光器还包括被配置为经由绝缘层接收附接到光子晶体板激光器腔的电焊盘的电信号的电焊盘，所述光子晶体激光器被配置为响应于电信号而发射激光。 另一方面，本发明的特征在于包括包含InGaP / InGaAlP晶体层的光子晶体平板腔的光子晶体检测器。 在另一方面，本发明的特征在于制造光子晶体激光腔的方法。

    Integrated Circuit Device
    7.
    发明申请
    Integrated Circuit Device 审中-公开
    集成电路器件

    公开(公告)号：US20070181913A1

    公开(公告)日：2007-08-09

    申请号：US11381348

    申请日：2006-05-02

    申请人： Chou Li

    发明人： Chou Li

    IPC分类号： H01L29/76 ,  H01L35/28

    CPC分类号： H01L29/861 ,  H01L21/761 ,  H01L21/7621 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/267 ,  H01L29/872 ,  H01S5/02461 ,  H01S5/0424 ,  H01S5/183 ,  H01S5/2045 ,  H01S5/2072

    摘要： A commercially mass-produced, integrated circuit including: a solid substrate of one conductivity type; at least one solid material pocket of a different conductivity type having a side surface and positioned on a selected top surface of the substrate to thereby form a signal-translating, electronic rectifying barrier between the at least one solid material pocket and the selected top surface of the substrate; and a solid state material region adjoining the substrate, the electronic rectifying barrier, and the side surface of the at least one solid material pocket; wherein next to the electronic rectifying barrier the solid state material region has a lateral dimensional accuracy of better than a few hundred atomic layers.

    摘要翻译： 一种商业化批量生产的集成电路，包括：一种导电类型的固体衬底; 至少一种具有不同导电类型的固体材料袋，其具有侧表面并且位于所述衬底的选定顶表面上，从而在所述至少一个固体材料袋和所选择的顶部表面之间形成信号平移电子整流屏障 基材; 以及邻接所述基板，所述电子整流屏障和所述至少一个固体材料袋的侧表面的固态材料区域; 其中在电子整流屏障旁边，固态材料区域的横向尺寸精度优于几百个原子层。

    Semiconductor laser
    8.
    发明申请
    Semiconductor laser 审中-公开
    半导体激光器

    公开(公告)号：US20070153868A1

    公开(公告)日：2007-07-05

    申请号：US11599191

    申请日：2006-11-14

    申请人： Lawrence West ,  Gregory Wojcik

    发明人： Lawrence West ,  Gregory Wojcik

    IPC分类号： H01S3/08

    CPC分类号： G02B6/12004 ,  G02B6/1228 ,  H01S5/026 ,  H01S5/041 ,  H01S5/0421 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/125 ,  H01S5/2045 ,  H01S5/22 ,  H01S5/2275

    摘要： A semiconductor laser having an optical volume of between about 0.1×λ3 to about 30×λ3, where λ is the wavelength of light emitted by the semiconductor laser. The semiconductor laser comprises an optical cavity having a proximal and distal end; a first reflector disposed at the proximal end; a second reflector disposed at the distal end, said optical cavity being defined by the first and second reflectors; an active region disposed transversely with respect to the optical cavity, wherein the semiconductor laser produces an axial emission of light from the distal end of the optical cavity.

    摘要翻译： 一种半导体激光器，其光学体积为约0.1λ3至约30×3 3，其中λ为由半导体激光器发出的光的波长。 半导体激光器包括具有近端和远端的光学腔; 设置在近端的第一反射器; 设置在所述远端的第二反射器，所述光腔由所述第一和第二反射器限定; 相对于所述光腔横向设置的有源区，其中所述半导体激光器产生来自所述光腔的远端的轴向轴向发射。