公开(公告)号：US09871348B2

公开(公告)日：2018-01-16

申请号：US15160249

申请日：2016-05-20

Applicant: Mitsubishi Electric Corporation

Inventor： Kimio Shigihara

IPC: H01S5/32 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01S5/2031 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/3213 ,  H01S5/34313

Abstract: An active layer is provided on a side closer to the second conductivity type cladding layer than a center of the light guide layer in the light guide layer. A first conductivity type low-refractive-index layer is formed between the first conductivity type cladding layer and the light guide layer and has a refractive index which is lower than a refractive index of the first conductivity type cladding layer. A layer thickness d of the light guide layer is a value at which a high-order mode equal to or higher than a first-order mode is permissible in a crystal growing direction by satisfying 2 ⁢ π λ ⁢ n g 2 - n c 2 ⁢ d 2 ≧ π 2 . The active layer is disposed at a position where a light confinement of the active layer becomes smaller compared to a case in which the active layer is disposed at a center of the light guide layer while there is not the first conductivity type low-refractive-index layer.

公开(公告)号：US09008141B2

公开(公告)日：2015-04-14

申请号：US14178346

申请日：2014-02-12

Applicant: Mitsubishi Electric Corporation

Inventor： Kimio Shigihara

IPC: H01S5/00 ,  H01S5/22 ,  H01S5/20

CPC classification number: H01S5/222 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/34313 ,  H01S2301/166 ,  H01S2301/18

Abstract: A semiconductor laser device includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer, a first light guide layer, an active layer, a second light guide layer, and a second conductivity type cladding layer laminated on the semiconductor substrate in that order. The semiconductor laser device supports at least one of a first-order and higher-order mode of oscillation in the semiconductor laser in crystal growth direction of the active layer. The first light guide layer is thicker than the second light guide layer. A first conductivity type low refractive index layer having a lower refractive index than refractive index of the first conductivity type cladding layer, is disposed between the first conductivity type cladding layer and the first light guide layer. The refractive index of the second light guide layer is higher than the refractive index of the first light guide layer.

Abstract translation: 半导体激光器件包括按顺序层叠在半导体衬底上的第一导电型半导体衬底，第一导电型包覆层，第一导光层，有源层，第二导光层和第二导电类型覆层 。 半导体激光装置在有源层的晶体生长方向上支持半导体激光器中的一阶和高阶振荡中的至少一种。 第一导光层比第二导光层厚。 第一导电型包覆层和第一导光层之间设置有比第一导电型包覆层折射率低的折射率的第一导电型低折射率层。 第二导光层的折射率高于第一导光层的折射率。

公开(公告)号：US20150023380A1

公开(公告)日：2015-01-22

申请号：US14178346

申请日：2014-02-12

Applicant: Mitsubishi Electric Corporation

Inventor： Kimio Shigihara

IPC: H01S5/22 ,  H01S5/20

CPC classification number: H01S5/222 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/34313 ,  H01S2301/166 ,  H01S2301/18

Abstract: A semiconductor laser device includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer, a first light guide layer, an active layer, a second light guide layer, and a second conductivity type cladding layer laminated on the semiconductor substrate in that order. The semiconductor laser device supports at least one of a first-order and higher-order mode of oscillation in the semiconductor laser in crystal growth direction of the active layer. The first light guide layer is thicker than the second light guide layer. A first conductivity type low refractive index layer having a lower refractive index than refractive index of the first conductivity type cladding layer, is disposed between the first conductivity type cladding layer and the first light guide layer. The refractive index of the second light guide layer is higher than the refractive index of the first light guide layer.

Abstract translation: 半导体激光器件包括按顺序层叠在半导体衬底上的第一导电型半导体衬底，第一导电型包覆层，第一导光层，有源层，第二导光层和第二导电类型覆层 。 半导体激光装置在有源层的晶体生长方向上支持半导体激光器中的一阶和高阶振荡中的至少一种。 第一导光层比第二导光层厚。 第一导电型包覆层和第一导光层之间设置有比第一导电型包覆层折射率低的折射率的第一导电型低折射率层。 第二导光层的折射率高于第一导光层的折射率。

公开(公告)号：US20140294028A1

公开(公告)日：2014-10-02

申请号：US14108452

申请日：2013-12-17

Applicant: Mitsubishi Electric Corporation

Inventor： Kimio Shigihara

IPC: H01S5/20

CPC classification number: H01S5/2027 ,  H01S5/2031 ,  H01S5/2036 ,  H01S5/22

Abstract: A semiconductor laser device includes an n-type semiconductor substrate, an n-type cladding layer laminated on the semiconductor substrate, an n-side light guiding layer laminated on the n-type cladding layer, an active layer laminated on the n-side light guiding layer, a p-side light guiding layer laminated on the active layer, and a p-type cladding layer laminated on the p-side light guiding layer. The sum of the thicknesses of the n-side and p-side light guiding layers is such that the first and higher order modes of oscillation can occur in the crystal growth direction. A low refractive index layer having a lower refractive index than the n-type cladding layer is located between the n-side light guiding layer and the n-type cladding layer, and the active layer is displaced from the lateral center plane of the light guiding layer structure toward the p-type cladding layer.

Abstract translation: 半导体激光器件包括n型半导体衬底，层叠在半导体衬底上的n型覆层，层叠在n型覆层上的n侧导光层，层叠在n侧光的活性层 引导层，层叠在有源层上的p侧导光层和层叠在p侧导光层上的p型覆层。 n侧和p侧导光层的厚度之和使得在晶体生长方向上可以发生第一和更高阶振荡。 折射率低于n型包覆层的低折射率层位于n侧导光层和n型覆层之间，活性层从光导向的侧面中心平面偏移 层结构朝向p型包覆层。

公开(公告)号：US08767788B2

公开(公告)日：2014-07-01

申请号：US13900645

申请日：2013-05-23

Applicant: Mitsubishi Electric Corporation

Inventor： Kimio Shigihara

IPC: H01S5/00 ,  H01S3/06 ,  H01S3/07

CPC classification number: H01S5/2036 ,  B82Y20/00 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0653 ,  H01S5/1017 ,  H01S5/22 ,  H01S5/2218 ,  H01S5/3211 ,  H01S5/34313

Abstract: A semiconductor laser includes a ridge section on top of a semiconductor laminated section. The ridge section is a stripe-shaped projection or ridge and serves as a constriction structure for constricting current and light. A pair of terrace sections is located on top of the semiconductor laminated structure. The terrace sections are raised island portions sandwiching and spaced from the ridge section. An active region is located below the ridge section as viewed in plan. High refractive index regions are located on both sides of the active region and below the terrace sections, respectively. Cladding regions are located between the active region and the high refractive index regions. The high refractive index regions have a higher refractive index than the cladding regions.

Abstract translation: 半导体激光器包括在半导体层叠部分的顶部上的脊部分。 脊部是条形突起或脊，并且用作收缩电流和光的收缩结构。 一对露台部分位于半导体叠层结构的顶部。 露台部分是凸起的岛部分，其间隔开并与脊部间隔开。 活动区域位于山脊下方，如图所示。 高折射率区域分别位于有源区域的两侧和露台部分之下。 包覆区位于有源区和高折射率区之间。 高折射率区域具有比包层区域更高的折射率。

公开(公告)号：US09929532B1

公开(公告)日：2018-03-27

申请号：US15623937

申请日：2017-06-15

Applicant: Mitsubishi Electric Corporation

Inventor： Kimio Shigihara ,  Satoshi Nishikawa

IPC: H01S5/20 ,  H01S5/026 ,  H01S5/22

CPC classification number: H01S5/026 ,  H01S5/0014 ,  H01S5/1003 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/1025 ,  H01S5/168 ,  H01S5/22 ,  H01S2301/166

Abstract: A broad area semiconductor laser device includes a waveguide region and a filter region. The waveguide region includes an active region into which current is injected, and a cladding region that sandwiches the active region. The active region either protrudes or is recessed with respect to the filter region, so as to promote the divergence of higher order modes in the filter region.

公开(公告)号：US20140098831A1

公开(公告)日：2014-04-10

申请号：US13900645

申请日：2013-05-23

Applicant: Mitsubishi Electric Corporation

Inventor： Kimio Shigihara

IPC: H01S5/20

CPC classification number: H01S5/2036 ,  B82Y20/00 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0653 ,  H01S5/1017 ,  H01S5/22 ,  H01S5/2218 ,  H01S5/3211 ,  H01S5/34313

Abstract: A semiconductor laser includes a ridge section on top of a semiconductor laminated section. The ridge section is a stripe-shaped projection or ridge and serves as a constriction structure for constricting current and light. A pair of terrace sections is located on top of the semiconductor laminated structure. The terrace sections are raised island portions sandwiching and spaced from the ridge section. An active region is located below the ridge section as viewed in plan. High refractive index regions are located on both sides of the active region and below the terrace sections, respectively. Cladding regions are located between the active region and the high refractive index regions. The high refractive index regions have a higher refractive index than the cladding regions.

Abstract translation: 半导体激光器包括在半导体层叠部分的顶部上的脊部分。 脊部是条形突起或脊，并且用作收缩电流和光的收缩结构。 一对露台部分位于半导体叠层结构的顶部。 露台部分是凸起的岛部分，其间隔开并与脊部间隔开。 活动区域位于山脊下方，如图所示。 高折射率区域分别位于有源区域的两侧和露台部分之下。 包覆区位于有源区和高折射率区之间。 高折射率区域具有比包层区域更高的折射率。

公开(公告)号：US11967802B2

公开(公告)日：2024-04-23

申请号：US16603803

申请日：2017-09-14

Applicant: Mitsubishi Electric Corporation

Inventor： Kimio Shigihara

IPC: H01S5/32 ,  H01S5/065 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323

CPC classification number: H01S5/3211 ,  H01S5/0653 ,  H01S5/2036 ,  H01S5/222 ,  H01S5/32316 ,  H01S2304/04

Abstract: A semiconductor laser device is provided with a semiconductor layer including an active layer and a plurality of cladding layers sandwiching the active layer. The active layer includes a stripe-shaped active region, a pair of first refractive index regions and a pair of second refractive index regions sandwiching the active layer and the pair of first refractive index regions. When λ is the laser oscillation wavelength, na is the effective refractive index of the active region, nc is the effective refractive index of the first refractive index regions, nt is the effective refractive index of the second refractive index regions, w is the width of the active region, and m is a positive integer, the semiconductor laser device satisfies na>nt>nc, and the conditions of equations (5), (8) and (9).

公开(公告)号：US11699890B2

公开(公告)日：2023-07-11

申请号：US18010468

申请日：2020-08-12

Applicant: Mitsubishi Electric Corporation

Inventor： Tomohiro Kyoto ,  Daisuke Morita ,  Kimio Shigihara ,  Keisuke Furuta

IPC: H01S5/023 ,  H01S5/0237 ,  H01S5/024

CPC classification number: H01S5/023 ,  H01S5/0237 ,  H01S5/02469

Abstract: A semiconductor laser machine includes a semiconductor laser element including a first end face that emits a laser beam and a second end face that is opposite the first end face; a heat sink; and a sub-mount securing the semiconductor laser element to the heat sink. The sub-mount includes a substrate that serves as a thermal stress reliever, a solder layer joined to the semiconductor laser element, and a junction layer formed between the substrate and the solder layer. Compared with the semiconductor laser element, the substrate is extended in a rearward direction that is from the first end face toward the second end face. As for the solder layer and the junction layer, a portion of at least the solder layer is removed behind the second end face.

公开(公告)号：US09203216B2

公开(公告)日：2015-12-01

申请号：US14108452

申请日：2013-12-17

Applicant: Mitsubishi Electric Corporation

Inventor： Kimio Shigihara

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/22

CPC classification number: H01S5/2027 ,  H01S5/2031 ,  H01S5/2036 ,  H01S5/22

Abstract: A semiconductor laser device includes an n-type semiconductor substrate, an n-type cladding layer laminated on the semiconductor substrate, an n-side light guiding layer laminated on the n-type cladding layer, an active layer laminated on the n-side light guiding layer, a p-side light guiding layer laminated on the active layer, and a p-type cladding layer laminated on the p-side light guiding layer. The sum of the thicknesses of the n-side and p-side light guiding layers is such that the first and higher order modes of oscillation can occur in the crystal growth direction. A low refractive index layer having a lower refractive index than the n-type cladding layer is located between the n-side light guiding layer and the n-type cladding layer, and the active layer is displaced from the lateral center plane of the light guiding layer structure toward the p-type cladding layer.

Abstract translation: 半导体激光器件包括n型半导体衬底，层叠在半导体衬底上的n型覆层，层叠在n型覆层上的n侧导光层，层叠在n侧光的活性层 引导层，层叠在有源层上的p侧导光层和层叠在p侧导光层上的p型覆层。 n侧和p侧导光层的厚度之和使得在晶体生长方向上可以发生第一和更高阶振荡。 折射率低于n型包覆层的低折射率层位于n侧导光层和n型覆层之间，活性层从光导向的侧面中心平面偏移 层结构朝向p型包覆层。