公开(公告)号：US20050116906A1

公开(公告)日：2005-06-02

申请号：US10995181

申请日：2004-11-24

申请人： Yasumasa Goto

发明人： Yasumasa Goto

IPC分类号： G02F1/1345 ,  G02F1/1368 ,  G09F9/00 ,  G09F9/30 ,  G09G3/30 ,  H01L21/336 ,  H01L29/786 ,  H01L51/50 ,  H05B33/00 ,  H05B33/08 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14

CPC分类号： G09G3/3208 ,  G09G2300/0426 ,  G09G2300/08 ,  G09G2320/0233

摘要： There is provided an active matrix display including pixels arrayed in a matrix form and each including a display element and a thin film transistor. In each of columns which the pixels form, the pixels are divided into a first pixel group in which the thin film transistors are arranged along a first straight line parallel with the column, and a second pixel group in which the thin film transistors are arranged along a second straight line parallel with the column and spaced apart from the first straight line.

摘要翻译： 提供了一种有源矩阵显示器，其包括以矩阵形式排列的像素，并且每个像素包括显示元件和薄膜晶体管。 在像素形成的各列中，将像素分割为第一像素组，其中薄膜晶体管沿着与列平行的第一直线排列，第二像素组，其中薄膜晶体管沿着 与柱平行并与第一直线间隔开的第二直线。

公开(公告)号：US06411906B1

公开(公告)日：2002-06-25

申请号：US09245312

申请日：1999-02-05

申请人： Yasumasa Goto

发明人： Yasumasa Goto

IPC分类号： H01L2131

CPC分类号： G01N21/211

摘要： Standard samples including at least a polycrystalline semiconductor film are produced by the energy beam annealing method. Dependencies on wavelength of refractive index and damping coefficients of standard samples are measured by means of a spectral ellipsometer, and grain sizes are measured to be quantified. An estimated sample consisting of a polycrystalline semiconductor film is produced by means of the energy beam annealing method. A dependency on wavelength of a refractive index and a damping coefficient of the estimated sample is measured to be compared with the results of the standard sample. Thus, the optically measured results can be quantified, so that it is possible to accurately measure a mean grain size of a polycrystalline silicon of a sample to be estimated, in a short time of about 5 seconds to calculate mobility to accurately select non-defective from defective in a short time.

摘要翻译： 通过能量束退火法制造至少包含多晶半导体膜的标准样品。 通过光谱椭偏仪测量标准样品的折射率波长和阻尼系数的依赖性，并测量晶粒尺寸以进行定量。 通过能量束退火法制造由多晶半导体膜组成的估计样品。 测量对估计样品的折射率波长和阻尼系数的依赖性与标准样品的结果进行比较。 因此，可以量化光学测量结果，从而可以在短时间内约5秒钟内精确地测量要估计的样品的多晶硅的平均晶粒尺寸，以计算迁移率以精确选择无缺陷 从短期的缺陷。

公开(公告)号：US06194023B1

公开(公告)日：2001-02-27

申请号：US09160360

申请日：1998-09-25

申请人： Hiroshi Mitsuhashi ,  Yuki Matsuura ,  Takashi Fujimura ,  Nobuo Imai ,  Yasumasa Goto

发明人： Hiroshi Mitsuhashi ,  Yuki Matsuura ,  Takashi Fujimura ,  Nobuo Imai ,  Yasumasa Goto

IPC分类号： B05D306

CPC分类号： H01L21/02686 ,  C23C16/24 ,  C23C16/56 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675

摘要： A method of manufacturing a poly-crystalline silicon (p-Si) film includes the steps in which an excimer laser anneals an amorphous silicon (a-Si) film deposited on a glass substrate and makes the same into the poly-crystalline silicon while the glass substrate is moved in a moving direction relative to the laser. Prior to carrying out the annealing step, a couple of the laser pulses are applied to different places of the a-Si film, provided that each of the laser pulses has different energy fluence and one pulse at a time is applied to the a-Si film. The pulse applied area is divided into two sections by a reference line perpendicular to the moving direction of the glass substrate. Average grain sizes of the p-Si film in the two sections are compared to each other to determine the moving direction.

摘要翻译： 制造多晶硅（p-Si）膜的方法包括以下步骤：其中准分子激光器退火沉积在玻璃基板上的非晶硅（a-Si）膜，并将其制成多晶硅，同时 玻璃基板相对于激光器在移动方向上移动。 在进行退火步骤之前，将一对激光脉冲施加到a-Si膜的不同位置，只要每个激光脉冲具有不同的能量通量，并且一次将一个脉冲施加到a-Si 电影。 脉冲施加区域由垂直于玻璃基板的移动方向的参考线分成两部分。 将两部分中的p-Si膜的平均晶粒尺寸彼此进行比较以确定移动方向。