公开(公告)号：US07750366B2

公开(公告)日：2010-07-06

申请号：US12180920

申请日：2008-07-28

申请人： Toru Okino ,  Mitsuyoshi Mori

发明人： Toru Okino ,  Mitsuyoshi Mori

IPC分类号： H01L31/0336 ,  H01L31/109 ,  H01L31/072 ,  H01L31/0328 ,  H01L31/113 ,  H01L31/062 ,  H01L21/324

CPC分类号： H01L27/14603 ,  H01L27/1464 ,  H01L27/14643

摘要： A solid-state imaging element includes a layered substrate made of silicon and composed of, for example, an N-type substrate, a P-type layer, and an N-type layer. In the layered substrate, an imaging region in which a plurality of pixels are arranged and a peripheral circuit region are formed. A recess reaching the reverse face of the P-type layer is formed in a reverse face portion of the layered substrate in the imaging region, and a reflective film is formed on at least the inner face of the recess. Light is reflected on the reverse face and the obverse face of the layered substrate.

摘要翻译： 固态成像元件包括由例如N型衬底，P型层和N型层构成的由硅构成的层状衬底。 在分层基板中，形成有多个像素的成像区域和外围电路区域。 在成像区域中的层叠基板的反面部形成有到达P型层的反面的凹部，在凹部的至少内面形成有反射膜。 光在层叠基板的反面和正面反射。

公开(公告)号：US20080029796A1

公开(公告)日：2008-02-07

申请号：US11826570

申请日：2007-07-17

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

IPC分类号： H01L31/113

CPC分类号： H01L27/14643 ,  H01L27/1463 ,  H01L27/14683

摘要： A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.

摘要翻译： 固态成像装置包括：成像区域，形成在由硅制成的基板的上部，具有光电转换部分，光电转换部分的电荷累积区域是第一导电类型; 形成在所述基板的至少一部分中以围绕所述光电转换部的器件隔离区; 以及形成在通过器件隔离区域与光电转换区域电隔离的成像区域的一部分上的MOS晶体管。 器件隔离区域的宽度在其下部比其上部小，并且固态成像器件还包括围绕器件隔离区域并且是与第一导电类型相反的第二导电类型的暗电流抑制区域 。

公开(公告)号：US08354693B2

公开(公告)日：2013-01-15

申请号：US12035340

申请日：2008-02-21

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Daisuke Ueda ,  Toshinobu Matsuno

发明人： Mitsuyoshi Mori ,  Toru Okino ,  Daisuke Ueda ,  Toshinobu Matsuno

IPC分类号： H01L31/0336

CPC分类号： H01L27/14689 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14687

摘要： A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.

摘要翻译： 固态成像装置包括具有形成在半导体基板上的光电转换元件的像素。 光电转换元件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层，形成在第一半导体层上并在其间形成接合部; 形成在所述第二半导体层上并且具有比所述第二半导体层更小的带隙能量的第三半导体层，所述第三半导体层由单晶半导体制成并且含有杂质; 以及覆盖第三半导体层的侧表面和上表面的第一导电类型的第四半导体层。 提供第四半导体层可以减少在黑暗条件下流动的电流。

公开(公告)号：US20100327332A1

公开(公告)日：2010-12-30

申请号：US12667997

申请日：2009-06-29

申请人： Toru Okino ,  Mitsuyoshi Mori ,  Kazuo Jujiwara

发明人： Toru Okino ,  Mitsuyoshi Mori ,  Kazuo Jujiwara

IPC分类号： H01L31/112

CPC分类号： H04N5/335 ,  H01L27/14603 ,  H01L27/1463

摘要： A solid state imaging device having a pixel area in which a plurality of light receiving elements are arranged, and a peripheral circuit area adjacent to the pixel area includes: a semiconductor substrate 102 of a first conductivity type or a second conductivity type; a first semiconductor layer 103 of the first conductivity type provided on the semiconductor substrate 102, where the first semiconductor layer 103 is lower in impurity concentration than the semiconductor substrate 102; first impurity regions 104 of the second conductivity type provided in upper portions of the first semiconductor layer 103 in the pixel area; second impurity regions 105 of the first conductivity type provided between the plurality of the first impurity regions 104 adjacent to each other in the pixel area and in the peripheral circuit area; and third impurity regions 106 of the first conductivity type expanded from a position directly under the second impurity regions 105 toward the semiconductor substrate 102 in the pixel area.

摘要翻译： 具有多个光接收元件的像素区域的固态成像器件和与像素区域相邻的外围电路区域包括：第一导电类型或第二导电类型的半导体衬底102; 设置在半导体衬底102上的第一导电类型的第一半导体层103，其中第一半导体层103的杂质浓度低于半导体衬底102; 设置在像素区域中的第一半导体层103的上部的第二导电类型的第一杂质区域104; 第一导电类型的第二杂质区域105设置在像素区域和周边电路区域中彼此相邻的多个第一杂质区域104之间; 并且第一导电类型的第三杂质区域106从第二杂质区域105正下方的位置朝向像素区域中的半导体衬底102扩展。

公开(公告)号：US4778374A

公开(公告)日：1988-10-18

申请号：US126727

申请日：1987-11-30

申请人： Hiroshi Takahashi ,  Yasutami Muto ,  Toru Okino

发明人： Hiroshi Takahashi ,  Yasutami Muto ,  Toru Okino

IPC分类号： A61F13/20 ,  A61F13/26 ,  B29C31/00 ,  B29C51/18 ,  B29C57/10 ,  B29L22/00 ,  B29L31/00

CPC分类号： A61F13/2085 ,  B29C31/002 ,  B29C51/18 ,  B29C57/10

摘要： An apparatus for continuously and rapidly forming petal-like segments at the tip of a tampon inserter into a hemispherically curved shape. Sets of molds are mounted on a support table on a rotary table turned about a shaft. Each set comprises a heating mold to heat and soften the tip of the tampon inserter and a cooling mold to shape while being cooled the heated and softened tip. The heating and cooling molds are moved by a cam so that either of the two molds is placed above the tampon inserter held in position by a gripper. The gripper comprises a pair of gripper segments that are opened and closed by a cam on the shaft and raised and lowered by another cam on the same shaft. The cams are adapted to release the tampon inserter from the gripper after the tampon inserter has been put first in the heating mold and then in the cooling mold. The tip of the tampon inserter held by the gripper first enters the heating mold to get heated. While the heated tip descends temporarily, the cooling mold is brought to above the tampon inserter. As the tampon inserter rises again, its tip comes in contact with the inner surface of the cooling mold, in which the tip is formed into a hemispherically curved shape while being cooled.

摘要翻译： 一种用于连续且快速地将卫生棉条插入器的尖端处的花瓣形节段形成为半球形弯曲形状的装置。 一组模具安装在围绕轴转动的旋转台上的支撑台上。 每组包括加热和软化棉条插入器的尖端的加热模具和冷却模具以在冷却加热和软化的尖端的同时成形。 加热和冷却模具由凸轮移动，使得两个模具中的任一个被置于通过夹持器保持在位置的棉条插入器之上。 夹持器包括一对夹持器段，其由轴上的凸轮打开和关闭，并由同一轴上的另一个凸轮升高和降低。 在将棉塞插入器首先放入加热模具中然后在冷却模具中之后，凸轮适于将棉塞插入器从夹具中释放。 由夹具保持的卫生棉条插入器的尖端首先进入加热模具以加热。 当加热的尖端临时下降时，冷却模具被带到卫生栓插入器的上方。 当棉塞插入器再次升高时，其尖端与冷却模具的内表面接触，其中尖端在冷却时形成半球形弯曲形状。