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公开(公告)号：US08354693B2
公开(公告)日：2013-01-15
申请号：US12035340
申请日：2008-02-21
申请人： Mitsuyoshi Mori , Toru Okino , Daisuke Ueda , Toshinobu Matsuno
发明人： Mitsuyoshi Mori , Toru Okino , Daisuke Ueda , Toshinobu Matsuno
IPC分类号： H01L31/0336
CPC分类号： H01L27/14689 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions.
摘要翻译： 固态成像装置包括具有形成在半导体基板上的光电转换元件的像素。 光电转换元件包括：第一导电类型的第一半导体层; 第二导电类型的第二半导体层，形成在第一半导体层上并在其间形成接合部; 形成在所述第二半导体层上并且具有比所述第二半导体层更小的带隙能量的第三半导体层，所述第三半导体层由单晶半导体制成并且含有杂质; 以及覆盖第三半导体层的侧表面和上表面的第一导电类型的第四半导体层。 提供第四半导体层可以减少在黑暗条件下流动的电流。
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公开(公告)号：US06323538B1
公开(公告)日：2001-11-27
申请号：US09480942
申请日：2000-01-11
IPC分类号： H01L27082
CPC分类号： H01L29/66265 , H01L29/7317
摘要： An n-type first single crystal silicon layer is provided as collector region over a silicon substrate with a first insulating film interposed therebetween. A p-type first polysilicon layer is provided as an extension of a base region over the first single crystal silicon layer with a second insulating film interposed therebetween. A p-type second single crystal silicon layer is provided as intrinsic base region on a side of the first single crystal silicon layer, second insulating film and first polysilicon layer. An n-type third single crystal silicon layer is provided as emitter region on a side of the second single crystal silicon layer. And an n-type third polysilicon layer is provided on the first insulating film as extension of an emitter region and is connected to a side of the third single crystal silicon layer.
摘要翻译： 在硅衬底上设置n型第一单晶硅层作为集电极区域，其间插入有第一绝缘膜。 提供p型第一多晶硅层作为第一单晶硅层上的基极区域的延伸，其间插入第二绝缘膜。 在第一单晶硅层，第二绝缘膜和第一多晶硅层的一侧设置p型第二单晶硅层作为本征基极区域。 在第二单晶硅层的一侧设置n型第三单晶硅层作为发射极区域。 并且在第一绝缘膜上设置n型第三多晶硅层作为发射极区域的延伸并且连接到第三单晶硅层的一侧。
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公开(公告)号：US06653714B2
公开(公告)日：2003-11-25
申请号：US10300440
申请日：2002-11-20
IPC分类号： H01L27082
CPC分类号： H01L29/66242 , H01L29/7317
摘要： A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to substantially cover the first semiconductor region; and a second semiconductor region of a second conductivity type different from the first conductivity type, a second semiconductor region being selectively formed, wherein: the second insulative region has a first opening which reaches a surface of the first semiconductor region, and the first semiconductor region has a second opening which reaches the underlying first insulative region, the second opening being provided in a position corresponding to the first opening of the second insulative region; the second semiconductor region is formed so as to fill the first opening and the second opening, thereby functioning as a base region; a lower portion of the second semiconductor region which at least fills the second opening is formed by lateral growth from a face of the first semiconductor region defining a side wall of the second opening; and the first semiconductor region includes an emitter region and a collector region formed therein.
摘要翻译： 横向双极晶体管包括：衬底; 形成在所述基板上的第一绝缘区域; 选择性地形成在所述第一绝缘区域上的第一导电类型的第一半导体区域; 形成为基本上覆盖所述第一半导体区域的第二绝缘区域; 以及与第一导电类型不同的第二导电类型的第二半导体区域，选择性地形成第二半导体区域，其中：第二绝缘区域具有到达第一半导体区域的表面的第一开口，第一半导体区域 具有到达下面的第一绝缘区域的第二开口，第二开口设置在与第二绝缘区域的第一开口对应的位置; 第二半导体区域形成为填充第一开口和第二开口，从而起基底区域的作用; 至少填充第二开口的第二半导体区域的下部通过从限定第二开口的侧壁的第一半导体区域的表面横向生长形成; 并且第一半导体区域包括形成在其中的发射极区域和集电极区域。
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公开(公告)号：US06503808B1
公开(公告)日：2003-01-07
申请号：US09687251
申请日：2000-10-13
IPC分类号： H01L21331
CPC分类号： H01L29/66242 , H01L29/7317
摘要： A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to substantially cover the first semiconductor region; and a second semiconductor region of a second conductivity type different from the first conductivity type, a second semiconductor region being selectively formed, wherein: the second insulative region has a first opening which reaches a surface of the first semiconductor region, and the first semiconductor region has a second opening which reaches the underlying first insulative region, the second opening being provided in a position corresponding to the first opening of the second insulative region; the second semiconductor region is formed so as to fill the first opening and the second opening, thereby functioning as a bass region; a lower portion of the second semiconductor region which at least fills the second opening is formed by lateral growth from a face of the first semiconductor region defining a side wall of the second opening; and the first semiconductor region includes an emitter region and a collector region formed therein.
摘要翻译： 横向双极晶体管包括：衬底; 形成在所述基板上的第一绝缘区域; 选择性地形成在所述第一绝缘区域上的第一导电类型的第一半导体区域; 形成为基本上覆盖所述第一半导体区域的第二绝缘区域; 以及与第一导电类型不同的第二导电类型的第二半导体区域，选择性地形成第二半导体区域，其中：第二绝缘区域具有到达第一半导体区域的表面的第一开口，第一半导体区域 具有到达下面的第一绝缘区域的第二开口，第二开口设置在与第二绝缘区域的第一开口对应的位置; 第二半导体区域形成为填充第一开口和第二开口，从而起低音区域的作用; 至少填充第二开口的第二半导体区域的下部通过从限定第二开口的侧壁的第一半导体区域的表面横向生长形成; 并且第一半导体区域包括形成在其中的发射极区域和集电极区域。
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公开(公告)号：US07846620B2
公开(公告)日：2010-12-07
申请号：US11860756
申请日：2007-09-25
IPC分类号： G03F1/00
CPC分类号： G03F7/0005 , G03F1/30
摘要： The phase shift mask according to the present invention is a phase shift mask for manufacturing a semiconductor device. The phase shift mask includes a light-blocking portion, a light-transmitting portion, a phase shift portion, and an auxiliary pattern portion, the light-blocking portion, the light-transmitting portion, the phase shift portion, and the auxiliary pattern portion being concentrically arranged, wherein a width of the auxiliary pattern portion in a radius direction is less than a width of the light-transmitting portion and a width of the phase shift portion in a radius direction. Furthermore, it is possible that a phase of exposure light which passes through an auxiliary pattern portion is opposite to a phase of exposure light which passes through a light-transmitting portion or a phase shift portion, the light-transmitting portion or the phase shift portion being the closest to the auxiliary pattern portion.
摘要翻译： 根据本发明的相移掩模是用于制造半导体器件的相移掩模。 相移掩模包括遮光部分，透光部分，相移部分和辅助图案部分，遮光部分，透光部分，相移部分和辅助图案部分 其中所述辅助图形部分在半径方向上的宽度小于所述透光部分的宽度和所述相移部分在半径方向上的宽度。 此外，通过辅助图案部分的曝光光的相位可能与通过透光部分或相移部分的曝光光的相位相反，透光部分或相移部分 最靠近辅助图案部分。
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公开(公告)号：US07585706B2
公开(公告)日：2009-09-08
申请号：US11898951
申请日：2007-09-18
IPC分类号： H01L21/336
CPC分类号： H01L29/66863 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L29/7783
摘要： The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.
摘要翻译： 本发明的半导体器件包括由在衬底上生长的III族氮化物半导体形成的有源区和通过氧化III族氮化物半导体而形成在有源区的周边部分中的绝缘氧化物膜。 在有源区域上，形成与延伸到绝缘氧化膜上并在绝缘氧化膜上具有延伸部分的有源区肖特基接触的栅电极，分别用作源电极和漏电极的欧姆电极形成有 沿着栅电极的栅极长度方向的侧边缘的空间。
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7.发明授权Semiconductor device having an active region formed from group III nitride 有权具有由III族氮化物形成的有源区的半导体器件公开(公告)号：US07285806B2
公开(公告)日：2007-10-23
申请号：US09813304
申请日：2001-03-21
IPC分类号： H01L31/00 , H01L21/336
CPC分类号： H01L29/66863 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L29/7783
摘要： The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.
摘要翻译： 本发明的半导体器件包括由在衬底上生长的III族氮化物半导体形成的有源区和通过氧化III族氮化物半导体而形成在有源区的周边部分中的绝缘氧化物膜。 在有源区域上，形成与延伸到绝缘氧化膜上并在绝缘氧化膜上具有延伸部分的有源区肖特基接触的栅电极，分别用作源电极和漏电极的欧姆电极形成有 沿着栅电极的栅极长度方向的侧边缘的空间。
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公开(公告)号：US20090250594A1
公开(公告)日：2009-10-08
申请号：US12415127
申请日：2009-03-31
IPC分类号： H01L27/146 , H01L21/00 , H01L27/14
CPC分类号： H01L27/14627 , G02B5/201 , H01L27/14621 , H01L27/14623 , H01L27/14685 , H01L27/14689
摘要： A solid-state image sensor that has a high pixel count and includes a color filter having high color reproducibility is provided. The solid-state image sensor includes: light-collecting elements each of which is a medium containing dispersant particles; light-receiving elements each of which is provided for a corresponding one of the light-collecting elements, and which receives light collected by the corresponding one of the light-collecting elements and generates an electric signal; and electrical wiring for transferring the electric signal, wherein each of the light-collecting elements has one of plural light-dispersion functions that are different depending on the corresponding light-receiving elements.
摘要翻译： 提供了具有高像素数并且包括具有高颜色再现性的滤色器的固态图像传感器。 固态图像传感器包括：各自是含有分散剂颗粒的介质的集光元件; 光接收元件被设置用于相应的一个集光元件，并且接收由相应的一个光收集元件收集的光并产生电信号; 以及用于传送电信号的电线，其中每个集光元件具有根据相应的光接收元件而不同的多个光分散功能之一。
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公开(公告)号：US06593193B2
公开(公告)日：2003-07-15
申请号：US10054843
申请日：2002-01-25
IPC分类号： H01L21336
CPC分类号： H01L29/66462 , H01L21/28264 , H01L29/2003 , H01L29/7783
摘要： An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.
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10.发明授权公开(公告)号：US07663084B2
公开(公告)日：2010-02-16
申请号：US12189971
申请日：2008-08-12
IPC分类号： H01L27/00
CPC分类号： H01L27/14627 , H01L27/14685
摘要： A solid-state imaging apparatus includes a plurality of unit pixels with associated microlenses arranged in a two-dimensional array. Each microlens includes a distributed index lens with a modulated effective refractive index distribution obtained by including a combination of a plurality of patterns having a concentric structure, the plurality of patterns being divided into line widths equal to or shorter than a wavelength of an incident light. At least one of the plurality of patterns includes a lower light-transmitting film having the concentric structure and a first line width and a first film thickness, and an upper light-transmitting film having the concentric structure configured on the lower light-transmitting film having a second line width and a second film thickness. The distributed index lens has a structure in which a refractive index material is dense at a center and becomes sparse gradually toward an outer side in the concentric structure.
摘要翻译： 固态成像装置包括具有以二维阵列排列的相关联的微透镜的多个单位像素。 每个微透镜包括具有调制的有效折射率分布的分布式折射率透镜，通过包括具有同心结构的多个图案的组合而获得，所述多个图案被划分成等于或短于入射光的波长的线宽。 多个图案中的至少一个图案包括具有同心结构且第一线宽度和第一膜厚度的下部透光膜，以及具有同心结构的上部透光膜，其在下部透光膜上具有 第二线宽度和第二膜厚度。 分布式折射率透镜具有其中折射率材料在中心处致密并且在同心结构中朝向外侧逐渐变稀的结构。
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