公开(公告)号：US08716835B2

公开(公告)日：2014-05-06

申请号：US13124873

申请日：2009-10-16

申请人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

发明人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

IPC分类号： H01L29/66 ,  H01L29/737 ,  H01L29/20

CPC分类号： H01L29/7371 ,  H01L29/0649 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66318

摘要： A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains InycAlxcGa1-xc-ycN (0•xc•1, 0•yc•1, 0

摘要翻译： 双极晶体管设置有发射极层，基极层和集电极层。 发射极层形成在衬底之上，并且是包括第一氮化物半导体的n型导电层。 基极层形成在发射极层上，是包含第二氮化物半导体的p型导体。 集电极层形成在基极层上并且包括第三氮化物半导体。 形成集电体层，基极层和发射极层，使得到基板表面的晶体生长方向平行于[000-1]的基板方向。 第三氮化物半导体含有InycAlxcGa1-xc-ycN（0·xc·1,0,0·yc·1,0,0cc·yc·1）。 第三氮化物半导体中的表面侧的a轴长度比基板侧的a轴长短。

公开(公告)号：US08716755B2

公开(公告)日：2014-05-06

申请号：US13553759

申请日：2012-07-19

申请人： Takashi Inoue ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Hironobu Miyamoto

发明人： Takashi Inoue ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Hironobu Miyamoto

IPC分类号： H01L29/66

CPC分类号： H01L29/778 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/432 ,  H01L29/517 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783

摘要： Compression strains are generated at an interface between the cap layer and the barrier layer and an interface between the channel layer and the buffer layer and a tensile strain is generated at an interface between the barrier layer and the channel layer. Therefore, negative charge is higher than positive charge at the interface between the cap layer and the barrier layer and the interface between the channel layer and the buffer layer, while positive charge is higher than negative charge at the interface between the barrier layer and the channel. The channel layer has a stacked layer structure of a first layer, a second layer, and a third layer. The second layer has a higher electron affinity than those of the first layer and the third layer.

摘要翻译： 在帽层和阻挡层之间的界面处产生压缩应变，并且在沟道层和缓冲层之间的界面处产生压缩应变，并且在阻挡层和沟道层之间的界面处产生拉伸应变。 因此，负电荷高于帽层和阻挡层之间的界面处的正电荷以及沟道层与缓冲层之间的界面，而正电荷高于阻挡层和沟道之间的界面处的负电荷 。 沟道层具有第一层，第二层和第三层的堆叠层结构。 第二层比第一层和第三层具有更高的电子亲和力。

公开(公告)号：US08687067B2

公开(公告)日：2014-04-01

申请号：US13542960

申请日：2012-07-06

申请人： Takeo Oshima ,  Takashi Maekawa ,  Ryuuichi Sawada ,  Haruo Yanagisawa ,  Chinatsu Sakurai ,  Akinori Iwabuchi ,  Shinya Tamizu ,  Takashi Inoue

发明人： Takeo Oshima ,  Takashi Maekawa ,  Ryuuichi Sawada ,  Haruo Yanagisawa ,  Chinatsu Sakurai ,  Akinori Iwabuchi ,  Shinya Tamizu ,  Takashi Inoue

IPC分类号： H04N17/00 ,  H04N7/18

CPC分类号： B60R1/00 ,  G06T7/80 ,  G06T2207/10004 ,  G06T2207/20092 ,  G06T2207/30244 ,  G06T2207/30252 ,  H04N17/002

摘要： An object of the present invention is to simplify a calibration operation of a camera and to shorten a time necessary for calibration. A camera calibration device 10 is mounted on a predetermined position of a movable object 100 and includes a camera 11 configured to take an image including an index 41 provided outside the movable object 100, an image superimposing unit 122 configured to generate a superimposed image by superimposing a calibration object 42 having a position adjustment part and a rotation adjustment part on the image taken by the camera 11, and a calculation unit 124 configured to calculate, based on a position of the calibration object 42 after being shifted in the superimposed image such that an end or a center of the index 41 meets the position adjustment part and a part of the index other than the end or the center overlaps the rotation adjustment part, parameters relative to a pan angle, a tilt angle and a roll angle for calibration of the camera mounting position.

摘要翻译： 本发明的目的是简化照相机的校准操作并缩短校准所需的时间。 相机校准装置10安装在可移动物体100的预定位置，并且包括被配置为拍摄包括设置在可移动物体100外部的索引41的图像的照相机11，被配置为通过叠加产生叠加图像的图像叠加单元122 在摄像机11拍摄的图像上具有位置调整部和旋转调整部的校准对象42，以及计算部124，其基于校准对象42在叠加图像中移位后的位置， 索引41的端部或中心与位置调整部分相遇，并且除了端部或中心之外的索引的一部分与旋转调节部分重叠，相对于摇摄角度的参数，用于校准的倾斜角度和滚动角度 相机安装位置。

公开(公告)号：US08674407B2

公开(公告)日：2014-03-18

申请号：US12919640

申请日：2009-03-12

申请人： Yuji Ando ,  Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

发明人： Yuji Ando ,  Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

IPC分类号： H01L29/66

CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/7785

摘要： The present invention provides a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed AlxGa1-xN (0≦x≦1), a channel layer composed of InyGa1-yN (0≦y≦1) with compressive strain and a contact layer composed of AlzGa1-zN (0≦z≦1), wherein a two-dimensional electron gas is produced in the vicinity of an interface of said InyGa1-yN channel layer with said AlzGa1-zN contact layer; a gate electrode is formed so as to be embedded in the recessed portion with intervention of an insulating film, which recessed portion is formed by removing a part of said AlzGa1-zN contact layer by etching it away until said InyGa1-yN channel layer is exposed; and, ohmic electrodes are formed on the AlzGa1-zN contact layer. Thus, the semiconductor device has superior uniformity and reproducibility of the threshold voltage while maintaining a low gate leakage current, and is also applicable to the enhancement mode type.

摘要翻译： 本发明提供一种具有这样的结构的半导体器件，该半导体器件通过依次层叠由晶格弛豫的Al x Ga 1-x N（0 @ x @ 1）构成的下阻挡层，由InyGa1-yN（0 @ y @ 1） 具有压应变和由Al z Ga 1-z N（0 @ z @ 1）组成的接触层，其中在所述In y Ga 1-y N沟道层与所述Al z Ga 1-z N接触层的界面附近产生二维电子气; 通过介入绝缘膜形成嵌入在凹陷部分中的栅电极，该凹陷部分通过蚀刻除去所述AlzGa1-zN接触层的一部分而形成，直到所述In y Ga 1-y N沟道层暴露 ; 并且在AlzGa1-zN接触层上形成欧姆电极。 因此，半导体器件在保持低栅极漏电流的同时具有优异的阈值电压的均匀性和再现性，并且也适用于增强型。

公开(公告)号：US08668225B2

公开(公告)日：2014-03-11

申请号：US13701136

申请日：2011-06-03

申请人： Jogen Yamaki ,  Hisato Oku ,  Takashi Inoue ,  Takuya Hori ,  Masato Miyaguchi ,  Kazuyoshi Arata

发明人： Jogen Yamaki ,  Hisato Oku ,  Takashi Inoue ,  Takuya Hori ,  Masato Miyaguchi ,  Kazuyoshi Arata

IPC分类号： B60R21/207

CPC分类号： B60N2/4235 ,  B60N2/4249 ,  B60N2/68 ,  B60N2/682 ,  B60N2/686 ,  B60N2/7011 ,  B60N2/7094 ,  B60N2/72 ,  B60R21/207

摘要： A vehicle seat includes: a seat back frame that is provided with a pair of side frame portions that are located on both left and right sides in the seat transverse direction; an outer-side load transmitting block that is located further to an outer side in the transverse direction of the seat back frame than the side frame portion of the seat back frame, and that transmits an impact load that is input from a side of the vehicle body to the seat back frame; a protruding portion that protrudes from a side surface of the side frame portion on the outer side in the transverse direction of the seat back frame towards the outer side in the transverse direction of the seat back frame; a side airbag apparatus that is located on a front surface of the protruding portion; and an engaging portion that is formed in the outer-side load transmitting block, and that receives the protruding portion. The protruding portion is formed in a box shape that has a supporting surface on a surface thereof that faces the side airbag apparatus.

摘要翻译： 车辆座椅包括：座椅靠背框架，其设置有位于座椅横向方向上的左右两侧的一对侧框架部分; 位于座椅靠背框架的横向方向上比座椅靠背框架的侧框架部分更靠外侧的外侧载荷传递块，并且传递从车辆侧面输入的冲击载荷 身体到座椅靠背框架; 从座椅靠背框架的宽度方向的外侧的侧框架部的侧面朝向座椅靠背框架的宽度方向的外侧突出的突出部; 位于突出部的前表面上的侧面安全气囊装置; 以及形成在所述外侧负载传递块中并且接收所述突出部的接合部。 突出部形成为在与侧面安全气囊装置相对的表面上具有支撑面的盒状。

公开(公告)号：US08526102B2

公开(公告)日：2013-09-03

申请号：US13409343

申请日：2012-03-01

申请人： Takashi Inoue ,  Kazutaka Nara

发明人： Takashi Inoue ,  Kazutaka Nara

IPC分类号： G02B6/26 ,  G02B6/42 ,  H04J14/06

CPC分类号： H04B10/60 ,  H04B10/613 ,  H04B10/614

摘要： The invention provides a PLC-type DP-QPSK demodulator that reduces connection loss between a polarization beam splitter and a 90-degree hybrid circuit and aims at reducing the manufacturing cost and an optical transmission system using the same. In an embodiment of the invention, a PLC-type DP-QPSK demodulator that receives a DP-QPSK signal includes one PLC chip having a planar lightwave circuit. Input ports and output ports of signal light are provided at an input end and at an output end of the PLC chip, respectively. Within the planar lightwave circuit, there are integrated a polarization beam splitter that splits the DP-QPSK signal into an X-polarization QPSK signal and a Y-polarization QPSK signal, and two 90-degree hybrid circuits that mix the X-polarization QPSK signal and local oscillation light and the Y-polarization QPSK signal and local oscillation light, respectively, split each QPSK signal into orthogonal components I, Q and output them.

摘要翻译： 本发明提供一种PLC型DP-QPSK解调器，其减少偏振分束器和90度混合电路之间的连接损耗，并旨在降低制造成本，并且使用该DP-QPSK解调器的光传输系统。 在本发明的实施例中，接收DP-QPSK信号的PLC型DP-QPSK解调器包括具有平面光波回路的一个PLC芯片。 信号灯的输入端口和输出端口分别设置在PLC芯片的输入端和输出端。 在平面光波电路内，集成有偏振分束器，其将DP-QPSK信号分解成X偏振QPSK信号和Y偏振QPSK信号，以及混合X偏振QPSK信号的两个90度混合电路 并且本地振荡光和Y偏振QPSK信号和本地振荡光分别将每个QPSK信号分成正交分量I，Q并输出。

公开(公告)号：US08526091B2

公开(公告)日：2013-09-03

申请号：US13061438

申请日：2009-08-27

申请人： Haruyasu Ito ,  Naoya Matsumoto ,  Takashi Inoue

发明人： Haruyasu Ito ,  Naoya Matsumoto ,  Takashi Inoue

IPC分类号： G02F1/01 ,  B23K26/00

CPC分类号： G02B27/0025 ,  B23K26/00 ,  B23K26/03 ,  B23K26/032 ,  B23K26/06 ,  B23K26/064 ,  B23K26/36 ,  B23K26/364 ,  B23K26/38 ,  B23K26/40 ,  B23K26/53 ,  B23K26/57 ,  B23K2101/40 ,  B23K2103/50 ,  G02B5/1876 ,  G02B5/32 ,  G02B21/0032 ,  G02B21/02 ,  G02B21/06 ,  G02B21/361 ,  G02B27/0068 ,  G02F1/01 ,  G02F2203/18

摘要： In an aberration-correcting method according to an embodiment of the present invention, in an aberration-correcting method for a laser irradiation device 1 which focuses a laser beam on the inside of a transparent medium 60, aberration of a laser beam is corrected so that a focal point of the laser beam is positioned within a range of aberration occurring inside the medium. This aberration range is not less than n×d and not more than n×d+Δs from an incidence plane of the medium 60, provided that the refractive index of the medium 60 is defined as n, a depth from an incidence plane of the medium 60 to the focus of the lens 50 is defined as d, and aberration caused by the medium 60 is defined as Δs.

摘要翻译： 在根据本发明实施例的像差校正方法中，在将激光束聚焦在透明介质60的内部的激光照射装置1的像差校正方法中，校正激光束的像差，使得 激光束的焦点位于介质内发生的像差范围内。 该像差范围不小于介质60的入射面的n×d且不大于n×d + Deltas，条件是介质60的折射率定义为n，从 到透镜50的焦点的介质60被定义为d，并且由介质60引起的像差被定义为Deltas。

公开(公告)号：US08525229B2

公开(公告)日：2013-09-03

申请号：US12299542

申请日：2007-05-07

申请人： Yasuhiro Okamoto ,  Yuji Ando ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

发明人： Yasuhiro Okamoto ,  Yuji Ando ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

IPC分类号： H01L29/205 ,  H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42316

摘要： A semiconductor device includes a channel layer, an electron-supplying layer provided on the channel layer, a cap layer provided on the electron-supplying layer and creating lattice match with the channel layer, and ohmic electrodes provided on the cap layer. The cap layer has a composition of (InyAl1-y)zGa1-zN (0≦y≦1, 0≦z≦1). The z for such cap layer monotonically decreases as being farther away from the electron-supplying layer.

摘要翻译： 半导体器件包括沟道层，设置在沟道层上的电子供给层，设置在电子供给层上并与沟道层形成晶格匹配的盖层以及设置在盖层上的欧姆电极。 盖层具有（In y Al 1-y）z Ga 1-z N（0 @ y @ 1，0 @ z @ 1）的组成。 这种盖层的z随着远离电子供应层而单调减小。

公开(公告)号：US08458644B2

公开(公告)日：2013-06-04

申请号：US13539637

申请日：2012-07-02

申请人： Takashi Inoue

发明人： Takashi Inoue

IPC分类号： G06F17/50

CPC分类号： G06F17/5063 ,  G06F17/5036

摘要： An RF circuit on a circuit simulator to be used in a microwave or millimeter wave range or a high-frequency range includes a function for being inserted by a first port and a second port thereof in a circuit to be observed, at an arbitrary cross-sectional point of the circuit, and evaluating a reflection coefficient (or a characteristic impedance) in the cross-section. The insertion loss between the first port and the second port is zero or approximately zero and is ignorable also for any finite system impedance other than zero.

摘要翻译： 在微波或毫米波范围或高频范围内使用的电路仿真器上的RF电路包括以任意交叉的方式在要观察的电路中被第一端口和第二端口插入的功能， 并且评估横截面中的反射系数（或特性阻抗）。 第一端口和第二端口之间的插入损耗为零或大约为零，并且对于除零之外的任何有限系统阻抗也是可忽略的。

公开(公告)号：US20130134892A1

公开(公告)日：2013-05-30

申请号：US13813218

申请日：2011-07-26

申请人： Minoru Kado ,  Satoshi Arima ,  Takashi Inoue

发明人： Minoru Kado ,  Satoshi Arima ,  Takashi Inoue

IPC分类号： H02M3/335 ,  H05B37/02

CPC分类号： H02M3/33523 ,  H05B33/0815 ,  H05B33/0848 ,  H05B37/02 ,  Y02B20/347

摘要： An insulated power supply device includes: an electric power conversion unit, a rectifier, a filter, a detection unit, a control circuit, and a signal transmission unit. The control circuit generates and outputs a control signal for a switching element that controls a current to be flown through a primary side of the electric power conversion unit. The signal transmission unit transmits, to the control circuit, a detection signal by the detection unit for detecting an output current or an output voltage. An output control pulse signal having control information in a duty ratio can be supplied as an outputted control signal individually to both of the control circuit and a secondary side of the electric power conversion unit. The output current or the output voltage can be thereby controlled.

摘要翻译： 绝缘电源装置包括：电力转换单元，整流器，滤波器，检测单元，控制电路和信号传输单元。 控制电路产生并输出用于控制要经过电力转换单元的初级侧的电流的开关元件的控制信号。 信号传输单元通过检测单元向控制电路发送用于检测输出电流或输出电压的检测信号。 可以将具有占空比的控制信息的输出控制脉冲信号作为输出的控制信号分别提供给电力转换单元的控制电路和次级侧。 可以控制输出电流或输出电压。