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26 条记录 (耗时 0.029 秒)

    Photo-mask and wafer image reconstruction
    11.
    发明授权
    Photo-mask and wafer image reconstruction 有权
    光掩模和晶片图像重建

    公开(公告)号：US08644588B2

    公开(公告)日：2014-02-04

    申请号：US12440722

    申请日：2007-09-19

    申请人： Moshe E. Preil ,  Alex N. Hegyi ,  Daniel S. Abrams

    发明人： Moshe E. Preil ,  Alex N. Hegyi ,  Daniel S. Abrams

    IPC分类号： G06K9/00

    CPC分类号： G06T7/001 ,  G03F1/84 ,  G06T2207/30148

    摘要： A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

    摘要翻译： 系统接收掩模图案和对应于掩模图案的光掩模的至少一部分的第一图像。 该系统基于第一图像和掩模图案来确定光掩模的至少一部分的第二图像。 该第二图像的特征在于比第一图像更多的空间频率。

    PHOTO-MASK AND WAFER IMAGE RECONSTRUCTION
    14.
    发明申请
    PHOTO-MASK AND WAFER IMAGE RECONSTRUCTION 有权
    照片和图像重建

    公开(公告)号：US20100135568A1

    公开(公告)日：2010-06-03

    申请号：US12440722

    申请日：2007-09-19

    申请人： Moshe E. Preil ,  Alex N. Hegyi ,  Daniel S. Abrams

    发明人： Moshe E. Preil ,  Alex N. Hegyi ,  Daniel S. Abrams

    IPC分类号： G06K9/68 ,  G06T7/00

    CPC分类号： G06T7/001 ,  G03F1/84 ,  G06T2207/30148

    摘要： A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

    摘要翻译： 系统接收掩模图案和对应于掩模图案的光掩模的至少一部分的第一图像。 该系统基于第一图像和掩模图案来确定光掩模的至少一部分的第二图像。 该第二图像的特征在于比第一图像更多的空间频率。

    Process Window Signature Patterns for Lithography Process Control
    16.
    发明申请
    Process Window Signature Patterns for Lithography Process Control 有权
    用于平版印刷过程控制的过程窗口签名模式

    公开(公告)号：US20120021343A1

    公开(公告)日：2012-01-26

    申请号：US13244218

    申请日：2011-09-23

    申请人： Jun Ye ,  Moshe E. Preil ,  Xun Chen ,  Shauh-Teh Juang ,  James Wiley

    发明人： Jun Ye ,  Moshe E. Preil ,  Xun Chen ,  Shauh-Teh Juang ,  James Wiley

    IPC分类号： G03F1/00

    CPC分类号： G03F7/70641 ,  G03F1/44 ,  G03F7/705 ,  G03F7/70625

    摘要： A method for identifying process window signature patterns in a device area of a mask is disclosed. The signature patterns collectively provide a unique response to changes in a set of process condition parameters to the lithography process. The signature patterns enable monitoring of associated process condition parameters for signs of process drift, analyzing of the process condition parameters to determine which are limiting and affecting the chip yields, analyzing the changes in the process condition parameters to determine the corrections that should be fed back into the lithography process or forwarded to an etch process, identifying specific masks that do not transfer the intended pattern to wafers as intended, and identifying groups of masks that share common characteristics and behave in a similar manner with respect to changes in process condition parameters when transferring the pattern to the wafer.

    摘要翻译： 公开了一种用于识别掩模的设备区域中的处理窗口签名图案的方法。 签名图案集合地提供了对一组工艺条件参数对光刻工艺的变化的唯一响应。 签名模式可以监控相关的过程状态参数，以了解过程漂移的迹象，分析过程状态参数，以确定哪些是限制和影响芯片产量，分析过程状态参数的变化以确定应反馈的校正 进入光刻工艺或转发到蚀刻工艺，识别不按照预期将预期图案转印到晶片的特定掩模，以及鉴定相对于工艺条件参数的变化共享共同特性并以类似方式表现的掩模组， 将图案转移到晶片。

    System and method for measuring and analyzing lithographic parameters and determining optimal process corrections
    17.
    发明授权
    System and method for measuring and analyzing lithographic parameters and determining optimal process corrections 有权
    用于测量和分析光刻参数并确定最佳过程校正的系统和方法

    公开(公告)号：US07749666B2

    公开(公告)日：2010-07-06

    申请号：US11462022

    申请日：2006-08-02

    申请人： Michael J. Gassner ,  Stefan Hunsche ,  Yu Cao ,  Jun Ye ,  Moshe E. Preil

    发明人： Michael J. Gassner ,  Stefan Hunsche ,  Yu Cao ,  Jun Ye ,  Moshe E. Preil

    IPC分类号： G03C5/00 ,  G01B9/00 ,  G01B9/08 ,  G01B11/00 ,  G01N21/00

    CPC分类号： G03F7/70666 ,  G03F7/70641

    摘要： A method of using an in-situ aerial image sensor array is disclosed to separate and remove the focal plane variations caused by the image sensor array non-flatness and/or by the exposure tool by collecting sensor image data at various nominal focal planes and by determining best focus at each sampling location by analysis of the through-focus data. In various embodiments, the method provides accurate image data at best focus anywhere in the exposure field, image data covering an exposure-dose based process window area, and a map of effective focal plane distortions. The focus map can be separated into contributions from the exposure tool and contributions due to topography of the image sensor array by suitable calibration or self-calibration procedures. The basic method enables a wide range of applications, including for example qualification testing, process monitoring, and process control by deriving optimum process corrections from analysis of the image sensor data.

    摘要翻译： 公开了一种使用原位空间图像传感器阵列的方法，以分离和去除由图像传感器阵列非平坦度引起的焦平面变化和/或通过曝光工具通过在各种标称焦平面处收集传感器图像数据，并且通过 通过分析焦点数据确定每个采样位置的最佳焦点。 在各种实施例中，该方法在曝光区域的任何地方提供最佳焦点上的精确图像数据，覆盖基于曝光剂量的过程窗口区域的图像数据和有效焦平面失真的映射。 焦点图可以通过适当的校准或自校准程序分为曝光工具的贡献和由于图像传感器阵列的形貌造成的贡献。 基本方法可以通过从图像传感器数据分析中得出最佳的过程校正，实现广泛的应用，包括例如鉴定测试，过程监控和过程控制。

    Method for identifying and using process window signature patterns for lithography process control
    18.
    发明申请
    Method for identifying and using process window signature patterns for lithography process control 有权

    公开(公告)号：US20100151364A1

    公开(公告)日：2010-06-17

    申请号：US12660313

    申请日：2010-02-23

    申请人： Jun Ye ,  Moshe E. Preil ,  Xun Chen ,  Shauh-Teh Juang ,  James Wiley

    发明人： Jun Ye ,  Moshe E. Preil ,  Xun Chen ,  Shauh-Teh Juang ,  James Wiley

    IPC分类号： G03F1/00

    CPC分类号： G03F7/70641 ,  G03F1/44 ,  G03F7/705 ,  G03F7/70625

    摘要： A method for identifying process window signature patterns in a device area of a mask is disclosed. The signature patterns collectively provide a unique response to changes in a set of process condition parameters to the lithography process. The signature patterns enable monitoring of associated process condition parameters for signs of process drift, analyzing of the process condition parameters to determine which are limiting and affecting the chip yields, analyzing the changes in the process condition parameters to determine the corrections that should be fed back into the lithography process or forwarded to an etch process, identifying specific masks that do not transfer the intended pattern to wafers as intended, and identifying groups of masks that share common characteristics and behave in a similar manner with respect to changes in process condition parameters when transferring the pattern to the wafer.

    Method for identifying and using process window signature patterns for lithography process control
    19.
    发明授权
    Method for identifying and using process window signature patterns for lithography process control 有权
    用于识别和使用光刻过程控制的过程窗口签名模式的方法

    公开(公告)号：US07695876B2

    公开(公告)日：2010-04-13

    申请号：US11466978

    申请日：2006-08-24

    申请人： Jun Ye ,  Moshe E. Preil ,  Xun Chen ,  Shauh-Teh Juang ,  James Wiley

    发明人： Jun Ye ,  Moshe E. Preil ,  Xun Chen ,  Shauh-Teh Juang ,  James Wiley

    IPC分类号： G03F9/00 ,  G03C5/00

    CPC分类号： G03F7/70641 ,  G03F1/44 ,  G03F7/705 ,  G03F7/70625

    摘要： A method for identifying process window signature patterns in a device area of a mask is disclosed. The signature patterns collectively provide a unique response to changes in a set of process condition parameters to the lithography process. The signature patterns enable monitoring of associated process condition parameters for signs of process drift, analyzing of the process condition parameters to determine which are limiting and affecting the chip yields, analyzing the changes in the process condition parameters to determine the corrections that should be fed back into the lithography process or forwarded to an etch process, identifying specific masks that do not transfer the intended pattern to wafers as intended, and identifying groups of masks that share common characteristics and behave in a similar manner with respect to changes in process condition parameters when transferring the pattern to the wafer.

    摘要翻译： 公开了一种用于识别掩模的设备区域中的处理窗口签名图案的方法。 签名图案集合地提供了对一组工艺条件参数对光刻工艺的变化的唯一响应。 签名模式可以监控相关的过程状态参数，以了解过程漂移的迹象，分析过程状态参数，以确定哪些是限制和影响芯片产量，分析过程状态参数的变化以确定应反馈的校正 进入光刻过程或转发到蚀刻工艺，识别不按照预期将预期图案转印到晶片的特定掩模，以及鉴定相对于工艺条件参数的变化共享共同特性并以类似方式表现的掩模组， 将图案转移到晶片。

    Methods and systems for detecting defects in a reticle design pattern
    20.
    发明授权
    Methods and systems for detecting defects in a reticle design pattern 有权
    用于检测标线设计图案中的缺陷的方法和系统

    公开(公告)号：US07769225B2

    公开(公告)日：2010-08-03

    申请号：US11314813

    申请日：2005-12-20

    申请人： Sagar A. Kekare ,  Ingrid B. Peterson ,  Moshe E. Preil

    发明人： Sagar A. Kekare ,  Ingrid B. Peterson ,  Moshe E. Preil

    IPC分类号： G06K9/00 ,  G01N21/00 ,  G01B5/28

    CPC分类号： G01N21/95607 ,  G03F1/84

    摘要： Computer-implemented methods and systems for detecting defects in a reticle design pattern are provided. One computer-implemented method includes acquiring images of a field in the reticle design pattern. The images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process. The field includes a first die and a second die. The method also includes detecting defects in the field based on a comparison of two or more of the images corresponding to two or more of the different values. In addition, the method includes determining if individual defects located in the first die have substantially the same within die position as individual defects located in the second die.

    摘要翻译： 提供了用于检测标线设计图案中的缺陷的计算机实现的方法和系统。 一种计算机实现的方法包括获取标线设计图案中的场的图像。 这些图像示出了如何以晶片印刷过程的一个或多个参数的不同值将晶片印刷在晶片上。 该领域包括第一模具和第二模具。 该方法还包括基于对应于两个或多个不同值的两个或更多个图像的比较来检测场中的缺陷。 另外，该方法包括确定位于第一管芯中的各个缺陷是否位于与位于第二管芯内的各个缺陷的管芯位置内基本相同的位置。