公开(公告)号：US20250069865A1

公开(公告)日：2025-02-27

申请号：US18584006

申请日：2024-02-22

Applicant: NGK INSULATORS, LTD.

Inventor： Tatsuya KUNO ,  Seiya INOUE

IPC: H01J37/32

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate including a horizontal and circular wafer placement surface, and a horizontal and annular focus ring placement surface provided on an outer circumference of the wafer placement surface at a position lower than the wafer placement surface by one step, and a connection part that connects the wafer placement surface and the focus ring placement surface; and a cooling plate provided on a lower surface of the ceramic plate, wherein the connection part has a lateral surface of a circular truncated cone with a diameter that increases from the wafer placement surface to the focus ring placement surface, and the diameter of the upper surface of the circular truncated cone matches the outer diameter of the wafer placement surface, and the diameter of the lower surface of the circular truncated cone matches the inner diameter of the focus ring placement surface.

公开(公告)号：US20240355656A1

公开(公告)日：2024-10-24

申请号：US18476701

申请日：2023-09-28

Applicant: NGK INSULATORS, LTD.

Inventor： Tatsuya KUNO ,  Taro USAMI

IPC: H01L21/673 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/67309 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/67248

Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface, a cooling plate having a refrigerant flow path and being provided on a lower surface-side of the ceramic plate; a first ceramic plate penetration section that reaches the wafer placement surface; a second ceramic plate penetration section that reaches the wafer placement surface; a first gas passage that communicates with the first ceramic plate penetration section; and a second gas passage that communicates with the second ceramic plate penetration section. The first gas passage has a first gas intermediate passage, the second gas passage has a second gas intermediate passage, the second gas intermediate passage is provided above the first gas intermediate passage, and the refrigerant flow path has a first flow path section provided above the first gas intermediate passage, and a second flow path section provided below the second gas intermediate passage.

公开(公告)号：US20240136219A1

公开(公告)日：2024-04-25

申请号：US18299130

申请日：2023-04-11

Applicant: NGK INSULATORS, LTD.

Inventor： Tatsuya KUNO ,  Seiya INOUE

IPC: H01L21/687 ,  H01J37/32

CPC classification number: H01L21/68785 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/68757 ,  H01J2237/002

Abstract: A wafer placement table includes: a ceramic plate including a wafer placement portion having a reference surface on which a number of small protrusions are provided; a cooling plate including a refrigerant flow path; a joining layer with which the ceramic plate and the cooling plate are joined; a recessed groove provided in the reference surface and having a bottom surface positioned lower than the reference surface; a plug arrangement hole passing through the ceramic plate and being open to the bottom surface of the recessed groove; a porous plug disposed in the plug arrangement hole, the porous plug having a top surface positioned at the same height as the bottom surface of the recessed groove and allowing gas to flow; and a gas supply path through which gas is supplied to the porous plug.

公开(公告)号：US20240105428A1

公开(公告)日：2024-03-28

申请号：US18179490

申请日：2023-03-07

Applicant: NGK Insulators, Ltd.

Inventor： Tatsuya KUNO ,  Seiya INOUE

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32807

Abstract: A wafer placement table includes a ceramic plate having a wafer placement surface and an electrode, a cooling plate made of a metal-ceramic composite and having a cooling medium passage, and a joining layer configured to join the plates. A distance from the wafer placement surface to at least one of upper base or lower base of the cooling medium passage is not constant. The cooling plate has a plurality of plate portions including a first plate portion and a second plate portion, and has a structure in which the plurality of plate portions metal-joined to each other. The first plate portion has a first passage portion which is a through groove having the same shape as the cooling medium passage. The second plate portion has a second passage portion which is a bottomed groove disposed in at least part of a region facing the first passage portion.

公开(公告)号：US20240079218A1

公开(公告)日：2024-03-07

申请号：US18168810

申请日：2023-02-14

Applicant: NGK Insulators, Ltd.

Inventor： Tatsuya KUNO ,  Taro USAMI ,  Masaki ISHIKAWA

IPC: H01J37/32 ,  H01L21/687

CPC classification number: H01J37/32724 ,  H01L21/68757 ,  H01L21/68785 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A wafer placement table includes an upper substrate; a lower substrate; a through hole extending through the lower substrate in an up-down direction; a plurality of projections provided in a dot pattern, for example, at an entirety of an upper surface of the lower substrate and being in contact with the lower surface of the upper substrate; a heat dissipation sheet having a projection insertion hole and being disposed between the upper substrate and the lower substrate; a screw hole provided, in the lower surface of the upper substrate, at a position facing the through hole; a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole; and a thermally conductive paste interposed, for example, between side surfaces of the projections and an inner peripheral surface of the projection insertion hole of the heat dissipation sheet.

公开(公告)号：US20230207370A1

公开(公告)日：2023-06-29

申请号：US18055476

申请日：2022-11-15

Applicant: NGK Insulators, Ltd.

Inventor： Seiya INOUE ,  Tatsuya KUNO

IPC: H01L21/683

CPC classification number: H01L21/6833

Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate; a metal joining layer and a cooling plate (conductive substrate) provided at a lower surface of the ceramic plate; a first hole penetrating the ceramic plate in an up-down direction; and a through-hole and a gas hole (second hole) penetrating the conductive substrate in an up-down direction, and communicating with the first hole. A dense insulating case has a bottomed hole 64 opened in a lower surface, and is disposed in the first hole and the second hole. A plurality of microholes penetrates a bottom of the bottomed hole in an up-down direction. A porous plug is disposed in the bottomed hole and in contact with the bottom.

公开(公告)号：US20230154781A1

公开(公告)日：2023-05-18

申请号：US17816006

申请日：2022-07-29

Applicant: NGK Insulators, Ltd.

Inventor： Tatsuya KUNO ,  Seiya INOUE

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32724 ,  H01J2237/2007 ,  H01J2237/002

Abstract: A wafer placement table includes an alumina base that has a wafer placement surface on its upper surface, and incorporates an electrode; a brittle cooling base bonded to a lower surface of the alumina base; and a ductile connection member stored in a storage hole, opened in a lower surface of the cooling base, in a state of restricted axial rotation and in a state of engaging with an engagement section of the storage hole, the ductile connection member having a male thread section or a female thread section.

公开(公告)号：US20230123870A1

公开(公告)日：2023-04-20

申请号：US17938388

申请日：2022-10-06

Applicant: NGK Insulators, Ltd.

Inventor： Hiroshi TAKEBAYASHI ,  Tatsuya KUNO ,  Seiya INOUE

IPC: H01J37/32 ,  H01L21/683

Abstract: A wafer placement table includes a ceramic base including an electrode, a cooling base including a coolant flow path formed therein, a bonding layer bonding the ceramic base and the cooling base, a stepped hole penetrating the bonding layer and the cooling base and including an upper hole portion with a small diameter, a lower hole portion with a large diameter, and a hole stepped portion between the upper hole portion and the lower hole portion, the upper hole portion passing through a region in which the coolant flow path is formed, a stepped insulating pipe inserted through the stepped hole and including an upper pipe portion with a small diameter, a lower pipe portion with a large diameter, and a pipe stepped portion between the upper pipe portion and the lower pipe portion; and a connection terminal bonded to the electrode and inserted through the stepped insulating pipe.

公开(公告)号：US20230116574A1

公开(公告)日：2023-04-13

申请号：US17930118

申请日：2022-09-07

Applicant: NGK Insulators, Ltd.

Inventor： Tatsuya KUNO ,  Seiya INOUE ,  Hiroshi TAKEBAYASHI ,  Masaki ISHIKAWA

IPC: H01J37/32 ,  H01L21/687

Abstract: A wafer placement table is a wafer placement table that includes a refrigerant flow channel through which refrigerant is flowed and includes a top base including a ceramic base incorporating an electrode and having a wafer placement surface on a top surface of the ceramic base, a bottom base on a top surface of which a flow channel groove defining a side wall and a bottom of the refrigerant flow channel is provided, and a seal member disposed between the top base and the bottom base so as to seal the refrigerant flow channel from an outside.

公开(公告)号：US20220400539A1

公开(公告)日：2022-12-15

申请号：US17657138

申请日：2022-03-30

Applicant: NGK Insulators, Ltd.

Inventor： Seiya INOUE ,  Tatsuya KUNO

IPC: H05B3/28 ,  H05B3/26 ,  H01L21/683 ,  H05B3/06

Abstract: A member for a semiconductor manufacturing apparatus includes a disk-shaped or annular ceramic heater, a metal base, an adhesive element bonding the metal base and the ceramic heater, an adhesive protective element disposed between the ceramic heater and the metal base to extend along a periphery of the adhesive element, and an anti-adhesion layer disposed between the adhesive element and the protective element, the anti-adhesion layer preventing adhesion between the adhesive element and the protective element.