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公开(公告)号：US20220326587A1
公开(公告)日：2022-10-13
申请号：US17641022
申请日：2019-09-12
发明人： Josuke Ozaki , Yoshihiro Ogiso , Yasuaki Hashizume
摘要： A semiconductor Mach-Zehnder optical modulator includes input-side lead-out lines, phase modulation electrode lines, and electrodes that apply modulation signals propagating through the phase modulation electrode lines to waveguides, respectively. The semiconductor Mach-Zehnder optical modulator further includes a conductive layer between a substrate and the waveguides, a plurality of first wiring layers connected to the conductive layer, and a second wiring layer that connects an electrode pad and the plurality of first wiring layers.
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公开(公告)号：US20220326585A1
公开(公告)日：2022-10-13
申请号：US17640884
申请日：2019-09-13
摘要： Provided is an IQ optical modulator including a nest-type MZ optical waveguide having optical modulation regions of I channel and Q channel End portions of an input optical waveguide and an output optical waveguide of the IQ optical modulator are located on a same edge face of a chip of the IQ optical modulator, an optical cross waveguide is included in which an optical waveguide between a first optical combiner and a second optical combiner of the nest-type MZ optical waveguide and the input optical waveguide cross each other, a first optical divider is provided between the I-channel optical modulation region and the Q-channel optical modulation region, and a light propagation direction in the first optical divider and a light propagation direction in the optical modulation regions are opposite to each other.
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公开(公告)号：US11275287B2
公开(公告)日：2022-03-15
申请号：US17051532
申请日：2019-04-18
发明人： Yoshihiro Ogiso , Yuta Ueda , Josuke Ozaki
摘要： A Mach-Zehnder modulator is enabled to perform high-speed modulation operation by reducing RF loss of a high-frequency wiring formed on an optical waveguide without deteriorating optical characteristics of branching and multiplexing optical circuits. The Mach-Zehnder modulator includes a Mach-Zehnder (MZ) optical waveguide including two arm waveguides, a 1×2 multimode interference coupler composed of a semiconductor that splits and distributes input light to the two arm waveguides, a 2×1 multimode interference coupler composed of a semiconductor that multiplexes light from the two arm waveguides, and phase modulation means for giving a phase difference to the light that propagates through the two arm waveguides, wherein the 1×2 multimode interference coupler and the 2×1 multimode interference coupler are formed in a high-mesa structure, and higher mode light radiation means for radiating higher mode light is connected to only the 2×1 multimode interference coupler among the two multimode interference couplers.
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公开(公告)号：US20210080795A1
公开(公告)日：2021-03-18
申请号：US16970283
申请日：2019-03-06
发明人： Nobuhiro Kikuchi , Eiichi Yamada , Josuke Ozaki , Yoshihiro Ogiso , Yuta Ueda , Shinsuke Nakano
摘要： Provided is an optical modulator having an optical modulation high frequency line through which a high frequency electrical signal can be efficiently input to an optical modulation region and which is in a broadband. High frequency lines of an optical modulator, that is, an input high frequency line, an optical modulation high frequency line, and an output high frequency line have a line configuration in which each of the input high frequency line and the output high frequency line is divided into a plurality of segments, and adjacent segments of the plurality of the segments have different characteristic impedances and propagation constants. The input high frequency line and the output high frequency line may be implemented by changing a width or a thickness of a signal electrode formed on a dielectric forming a micro-strip line between adjacent segments. The characteristic impedances and the propagation constants may be changed by changing a dielectric constant of the dielectric instead of changing the width or the thickness of the signal electrode.
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公开(公告)号：US20200026145A1
公开(公告)日：2020-01-23
申请号：US16494672
申请日：2018-03-20
发明人： Yoshihiro Ogiso , Josuke Ozaki , Yuta Ueda
IPC分类号： G02F1/225 , G02F1/01 , H04B10/079 , H04B10/548
摘要： An IQ optical modulator including: a parent Mach-Zehnder type (MZM) optical waveguide; child MZM optical waveguides constituting two arms of the parent MZM; two electrode transmission lines provided along the two arms of the child MZM, respectively, and receiving modulation signal to phase-modulate an optical signal; an RF extension line connected to the two electrode transmission lines, respectively; a first optical splitter branching light into the two arms of the parent MZM; a second optical splitter branching light into the two arms of the child MZM; and a first optical multiplexer multiplexing light from the two arms of the child MZM, wherein stripe direction of the child MZM optical waveguide is same as the RF extension line, the second optical splitter, and the first optical multiplexer, and is orthogonal to the first optical splitter.
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公开(公告)号：US20180164654A1
公开(公告)日：2018-06-14
申请号：US15577918
申请日：2016-06-01
IPC分类号： G02F1/225
CPC分类号： G02F1/2257 , G02F1/025 , G02F1/225 , G02F2001/212 , G02F2202/102 , G02F2202/107
摘要： To provide a Mach-Zehnder (MZ) type semiconductor optical modulation element that can be used as a modulator, which is ultrafast and excellent in electrical stability. A semiconductor optical modulation element of a Mach-Zehnder type that performs modulation of light using a refractive index modulation region where a refractive index of the light guided to an optical waveguide is modulated and an input and output region where multiplexing/demultiplexing of the light split in the refractive index modulation region is performed, characterized in that in the refractive index modulation region of the optical waveguide, an n-type clad layer, an i core layer, and a p-type clad layer are stacked in the order from a top layer on a substrate surface equivalent to a (100) plane of a sphalerite-type semi-insulating semiconductor crystal substrate, the n-type clad layer is formed in a ridge shape in an inverted mesa direction, and a capacitance-loaded electrode is provided on the n-type clad layer.
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公开(公告)号：US12105398B2
公开(公告)日：2024-10-01
申请号：US17429005
申请日：2019-02-14
CPC分类号： G02F1/2257 , G02F1/212
摘要： Phase modulation electrode lines of a semiconductor Mach-Zehnder optical modulator are formed along waveguides. Output-side lead lines are bent in a direction crossing the extending direction of the waveguides in the plane of a dielectric layer and are connected to terminal resistors. The output-side lead lines are formed in a predetermined width corresponding to a desired impedance and make the width narrower than the predetermined width only in the bent portions and portions where the output-side lead lines crosses the waveguides.
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公开(公告)号：US12066735B2
公开(公告)日：2024-08-20
申请号：US17276656
申请日：2019-09-11
CPC分类号： G02F1/212 , G02F1/0121 , G02F1/2257
摘要： In a terminator, a midpoint electrode is provided between a first signal electrode and a second signal electrode, a first resistor is connected between the first signal electrode and the midpoint electrode, a second resistor is connected between the second signal electrode and the midpoint electrode, a first GND electrode is provided on a side opposite to the side where the first resistor is provided with the first signal electrode interposed therebetween, a second GND electrode is provided on the side opposite to the side where the second resistor is provided with the second signal electrode interposed therebetween, and capacitances in the terminator are formed between the first signal electrode and the midpoint electrode, between the second signal electrode and the midpoint electrode, between the first signal electrode and the first GND electrode, and between the second signal electrode and the second GND electrode.
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公开(公告)号：US12038603B2
公开(公告)日：2024-07-16
申请号：US17772758
申请日：2019-11-06
发明人： Josuke Ozaki , Akinori Fujino , Naonori Ueda
摘要： Provided is an optical modulator manufacturing method capable of determining the quality of an optical modulator having MMI waveguides and realizing improvement in yield during manufacturing. Here, in waveguide fabrication processes, hard mask material deposition, soft mask material application, exposure, and hard mask fabrication are executed, and then in hard mask width length measurement, the hard mask width for fabricating the MMI waveguide is measured at one or more locations. In hard mask width quality determination based on machine learning results, the quality of optical characteristics of the chip is predicted and determined in advance, based on sample data created in advance by analyzing a relationship between the hard mask width and optical characteristics of the optical modulator, depending on whether the hard mask width is present in a permissible range of the sample data. Depending on the result of the above-mentioned determination.
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公开(公告)号：US11947237B2
公开(公告)日：2024-04-02
申请号：US17420004
申请日：2020-01-08
发明人： Josuke Ozaki , Hiromasa Tanobe , Shigeru Kanazawa
CPC分类号： G02F1/212 , G02F1/2257
摘要： A semiconductor Mach-Zehnder optical modulator includes input side lead-out lines, phase modulation electrode lines, output side lead-out lines, electrodes that apply modulation signals propagating through the phase modulation electrode lines to respective waveguides, and ground lines. Furthermore, at least one n-type semiconductor layer or p-type semiconductor layer is formed between a substrate and a dielectric layer in a lower layer under the output side lead-out lines intermittently along the output side lead-out lines.
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