公开(公告)号：US09614111B2

公开(公告)日：2017-04-04

申请号：US14766552

申请日：2014-01-24

Applicant: NITTO DENKO CORPORATION

Inventor： Seiki Teraji ,  Hiroto Nishii ,  Taichi Watanabe ,  Yusuke Yamamoto ,  Kazunori Kawamura ,  Takashi Minemoto ,  Jakapan Chantana

IPC: H01L31/00 ,  H01L31/032 ,  H01L31/0392 ,  H01L31/0749 ,  H01L21/02 ,  H01L31/065

CPC classification number: H01L31/0322 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/065 ,  H01L31/0749 ,  Y02E10/50 ,  Y02E10/541 ,  Y02E10/543

Abstract: The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film.

公开(公告)号：US20150303346A1

公开(公告)日：2015-10-22

申请号：US14376920

申请日：2013-02-25

Applicant: NITTO DENKO CORPORATION

Inventor： Seiki Teraji ,  Kazunori Kawamura ,  Hiroto Nishii ,  Taichi Watanabe

IPC: H01L31/18 ,  H01L31/032

CPC classification number: H01L31/18 ,  C23C14/0623 ,  C23C14/081 ,  C23C14/086 ,  C23C14/3464 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  H01J37/34 ,  H01J37/3417 ,  H01L31/0322 ,  H01L31/1884 ,  Y02E10/541 ,  Y02E10/549 ,  Y02P70/521

Abstract: In order to provide a method that can manufacture a compound solar cell with a high conversion efficiency at low cost, a buffer layer is formed by a sputtering method with the use of a high-frequency RF power source or a high-frequency RF power source and a direct-current (DC) power source in combination, while two cathode targets for sputtering are arranged to be opposed to each other on both sides of an imaginary central axis assumed to extend perpendicularly from a surface of a substrate over with a CIGS light absorbing layer is stacked.

Abstract translation: 为了提供可以以低成本制造具有高转换效率的复合太阳能电池的方法，通过使用高频RF电源或高频RF电源的溅射法形成缓冲层 和直流（DC）电源组合，而用于溅射的两个阴极靶被布置成在假想中心轴线的两侧彼此相对，假设中心轴线从CIGS光线从衬底表面垂直延伸 层叠吸收层。