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公开(公告)号:US10347791B2
公开(公告)日:2019-07-09
申请号:US15744457
申请日:2016-07-13
Inventor: Dong Chul Kim , Ida Marie E. Høiaas , Carl Philip J. Heimdal , Bjørn Ove M. Fimland , Helge Weman
IPC: H01L31/00 , H01L33/00 , H01L33/08 , H01L31/0352 , H01L33/18 , H01L33/24 , H01L33/44 , H01L33/06
Abstract: A composition of matter comprising: a graphitic substrate optionally carried on a support; a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowires or nanopyramids comprising at least one semiconducting group III-V compound.
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公开(公告)号:US20150194549A1
公开(公告)日:2015-07-09
申请号:US14409837
申请日:2013-06-21
Inventor: Helge Weman , Bjørn-Ove Fimland , Dong Chul Kim
IPC: H01L31/0352 , H01L31/0224 , H01L31/18
CPC classification number: H01L31/035227 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/0304 , H01L31/035281 , H01L31/1804 , H01L31/1828 , H01L31/184 , H01L31/1852
Abstract: A composition of matter, in particular a photovoltaic cell, comprising: at least one core semiconductor nanowire on a graphitic substrate, said at least one core nanowire having been grown epitaxially on said substrate wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or at least one group IV element; a semiconductor shell surrounding said core nanowire, said shell comprising at least one group III-V compound or at least one group II-VI compound or at least one group IV element such that said core nanowire and said shell form a n-type semiconductor and a p-type semiconductor respectively or vice versa; and an outer conducting coating surrounding said shell which forms an electrode contact.
Abstract translation: 物质的组合物,特别是光伏电池,包括:在石墨基底上的至少一个核半导体纳米线,所述至少一个核心纳米线已经在所述基底上外延生长,其中所述纳米线包含至少一种III-V族化合物或 至少一种II-VI族化合物或至少一种IV族元素; 围绕所述芯纳米线的半导体外壳,所述壳包含至少一种III-V族化合物或至少一种II-VI族化合物或至少一种IV族元素,使得所述核心纳米线和所述壳形成n型半导体, 分别为p型半导体,反之亦然; 以及围绕所述外壳的外导电涂层,其形成电极接触。
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