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11.发明申请METHODS AND APPARATUS FOR PRODUCING SEMICONDUCTOR ON INSULATOR STRUCTURES USING DIRECTED EXFOLIATION 有权使用方向分解生产绝缘体结构的半导体的方法和装置公开(公告)号：US20100221927A1
公开(公告)日：2010-09-02
申请号：US12779606
申请日：2010-05-13
申请人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
发明人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
IPC分类号： H01L21/265
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.
摘要翻译： 方法和装置提供用于形成绝缘体上半导体（SOI）结构，包括使施主半导体晶片的注入表面进行离子注入步骤，以在限定施主半导体晶片的剥离层的横截面中产生弱化片 ; 以及在所述离子注入步骤之前，期间或之后对所述施主半导体晶片进行空间变化步骤，使得所述弱化切片的至少一个参数在X轴和Y轴中的至少一个中在所述弱化切片之间空间上变化 方向。
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12.发明申请Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation 有权使用定向剥离制造绝缘体上半导体结构的方法和装置公开(公告)号：US20100112785A1
公开(公告)日：2010-05-06
申请号：US12290384
申请日：2008-10-30
申请人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
发明人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
IPC分类号： H01L21/302
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.
摘要翻译： 方法和装置提供用于形成绝缘体上半导体（SOI）结构，包括使施主半导体晶片的注入表面进行离子注入步骤，以在限定施主半导体晶片的剥离层的横截面中产生弱化片 ; 以及在所述离子注入步骤之前，期间或之后对所述施主半导体晶片进行空间变化步骤，使得所述弱化切片的至少一个参数在X轴和Y轴中的至少一个中在所述弱化切片之间空间上变化 方向。
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公开(公告)号：US20070281440A1
公开(公告)日：2007-12-06
申请号：US11445036
申请日：2006-05-31
IPC分类号： H01L21/46
CPC分类号： H01L21/187
摘要： Disclosed are methods for making SOI and SOG structures using ion shower for implanting ions to the donor substrate. The ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
摘要翻译： 公开了使用离子淋浴制造SOI和SOG结构以将离子注入供体衬底的方法。 离子淋浴提供方便，高效，低成本和有效的离子注入，同时最大限度地减少对剥离膜的损伤。
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公开(公告)号：US09339993B2
公开(公告)日：2016-05-17
申请号：US13822132
申请日：2011-09-13
CPC分类号： B32B17/00 , B32B3/00 , B32B3/04 , B32B17/10036 , B32B17/10137 , B32B17/10293 , C03C21/00 , F25D23/02 , Y10T428/23 , Y10T428/24628 , Y10T428/266
摘要： A thin lightweight glass fascia for appliances. The fascia may be a seamless shaped glass fascia for an appliance, such as a glass fascia that wraps around at least two opposing edges of an appliance. The glass fascia may seamlessly incorporate a display or control panel under the fascia. A mounting arrangement that facilitates quick fascia removal and replacement may be provided. The fascia may be a chemically-strengthened glass sheet having a thickness of less than 2.0 mm, and a near-surface region under a compressive stress, wherein the compressive stress (CS) at a surface of the first glass sheet is greater than 300 MPa and extends to a depth of layer of at least 20 micrometers.
摘要翻译： 用于电器的薄型轻质玻璃面板。 面板可以是用于器具的无缝形状的玻璃面板，例如围绕设备的至少两个相对边缘的玻璃面板。 玻璃面板可以无缝地将显示屏或控制面板放置在仪表板下面。 可以提供有助于快速进行筋膜剥离和更换的安装装置。 面板可以是厚度小于2.0mm的化学强化玻璃板和压缩应力下的近表面区域，其中第一玻璃板表面处的压缩应力（CS）大于300MPa 并延伸至至少20微米的深度。
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公开(公告)号：US07312154B2
公开(公告)日：2007-12-25
申请号：US11314060
申请日：2005-12-20
申请人： Jeffrey Scott Cites , Charles Michael Darcangelo , Steven Joseph Gregorski , Richard Orr Maschmeyer , Mark Andrew Stocker , John Christopher Thomas
发明人： Jeffrey Scott Cites , Charles Michael Darcangelo , Steven Joseph Gregorski , Richard Orr Maschmeyer , Mark Andrew Stocker , John Christopher Thomas
IPC分类号： H01L21/461
CPC分类号： B24B49/12 , B24B37/013 , H01L21/30625 , H01L22/26
摘要： A method of polishing a semiconductor layer formed on a transparent substrate is described, the method including measuring the thickness of the semiconductor from the substrate side of the semiconductor layer simultaneously with the polishing, and using the thickness measurement to modify the polishing.
摘要翻译： 对在透明基板上形成的半导体层进行研磨的方法进行说明，该方法包括：在与抛光同时从半导体层的基板侧测量半导体的厚度，并使用厚度测量来改变抛光。
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公开(公告)号：US20130164483A1
公开(公告)日：2013-06-27
申请号：US13822132
申请日：2011-09-13
CPC分类号： B32B17/00 , B32B3/00 , B32B3/04 , B32B17/10036 , B32B17/10137 , B32B17/10293 , C03C21/00 , F25D23/02 , Y10T428/23 , Y10T428/24628 , Y10T428/266
摘要： A thin lightweight glass fascia for appliances. The fascia may be a seamless shaped glass fascia for an appliance, such as a glass fascia that wraps around at least two opposing edges of an appliance. The glass fascia may seamlessly incorporate a display or control panel under the fascia. A mounting arrangement that facilitates quick fascia removal and replacement may be provided. The fascia may be a chemically-strengthened glass sheet having a thickness of less than 2.0 mm, and a near-surface region under a compressive stress, wherein the compressive stress (CS) at a surface of the first glass sheet is greater than 300 MPa and extends to a depth of layer of at least 20 micrometers.
摘要翻译： 用于电器的薄型轻质玻璃面板。 面板可以是用于器具的无缝形状的玻璃面板，例如围绕设备的至少两个相对边缘的玻璃面板。 玻璃面板可以无缝地将显示屏或控制面板放置在仪表板下面。 可以提供有助于快速进行筋膜剥离和更换的安装装置。 面板可以是厚度小于2.0mm的化学强化玻璃板和压缩应力下的近表面区域，其中第一玻璃板表面处的压缩应力（CS）大于300MPa 并延伸至至少20微米的深度。
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公开(公告)号：US07927970B2
公开(公告)日：2011-04-19
申请号：US12369485
申请日：2009-02-11
IPC分类号： H01L21/30 , H01L21/46 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/26506
摘要： Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
摘要翻译： 公开了使用纯化离子淋浴制备SOI和SOG结构以将离子注入给体衬底的方法。 纯化的离子淋浴提供方便，高效，低成本和有效的离子注入，同时最小化对剥离膜的损害。
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公开(公告)号：US07608521B2
公开(公告)日：2009-10-27
申请号：US11444741
申请日：2006-05-31
CPC分类号： H01L21/76254 , H01L21/26506
摘要： Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
摘要翻译： 公开了使用纯化离子淋浴制备SOI和SOG结构以将离子注入给体衬底的方法。 纯化的离子淋浴提供方便，高效，低成本和有效的离子注入，同时最小化对剥离膜的损害。
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19.发明申请Touch sensitive display employing an SOI substrate and integrated sensing circuitry 审中-公开使用SOI衬底和集成感测电路的触敏显示器公开(公告)号：US20090195511A1
公开(公告)日：2009-08-06
申请号：US12012564
申请日：2008-02-04
申请人： Jeffrey Scott Cites , David Francis Dawson-Elli , Eric John Mozdy , Carlo Anthony Kosik Williams
发明人： Jeffrey Scott Cites , David Francis Dawson-Elli , Eric John Mozdy , Carlo Anthony Kosik Williams
IPC分类号： G06F3/041
CPC分类号： G06F3/0412 , G06F3/044
摘要： Methods and apparatus for producing a touch sensitive LCD employing a semiconductor on glass (SiOG) structure provide for: a glass or glass-ceramic substrate; a single crystal semiconductor layer bonded to the glass or glass-ceramic substrate; display circuitry including a plurality of thin-film transistors disposed on the single crystal semiconductor layer and forming a matrix of display pixels; display control circuitry operable to drive the display circuitry to produce viewable images; and sensing circuitry operable to detect electrical characteristic changes in one or more of the single crystal semiconductor layer and the display circuitry, the electrical characteristic changes resulting from user touch events.
摘要翻译： 使用玻璃上的半导体（SiOG）结构的触敏LCD的制造方法和装置提供：玻璃或玻璃陶瓷基片; 结合到玻璃或玻璃陶瓷基板的单晶半导体层; 显示电路，包括设置在单晶半导体层上并形成显示像素矩阵的多个薄膜晶体管; 显示控制电路，其可操作以驱动所述显示电路以产生可视图像; 以及可操作以检测单晶半导体层和显示电路中的一个或多个中的电特性变化的感测电路，由用户触摸事件导致的电特性变化。
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公开(公告)号：US20090149001A1
公开(公告)日：2009-06-11
申请号：US12369485
申请日：2009-02-11
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/26506
摘要： Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
摘要翻译： 公开了使用纯化离子淋浴制备SOI和SOG结构以将离子注入给体衬底的方法。 纯化的离子淋浴提供方便，高效，低成本和有效的离子注入，同时最小化对剥离膜的损害。
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