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公开(公告)号：US07312154B2
公开(公告)日：2007-12-25
申请号：US11314060
申请日：2005-12-20
申请人： Jeffrey Scott Cites , Charles Michael Darcangelo , Steven Joseph Gregorski , Richard Orr Maschmeyer , Mark Andrew Stocker , John Christopher Thomas
发明人： Jeffrey Scott Cites , Charles Michael Darcangelo , Steven Joseph Gregorski , Richard Orr Maschmeyer , Mark Andrew Stocker , John Christopher Thomas
IPC分类号： H01L21/461
CPC分类号： B24B49/12 , B24B37/013 , H01L21/30625 , H01L22/26
摘要： A method of polishing a semiconductor layer formed on a transparent substrate is described, the method including measuring the thickness of the semiconductor from the substrate side of the semiconductor layer simultaneously with the polishing, and using the thickness measurement to modify the polishing.
摘要翻译： 对在透明基板上形成的半导体层进行研磨的方法进行说明，该方法包括：在与抛光同时从半导体层的基板侧测量半导体的厚度，并使用厚度测量来改变抛光。
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2.发明申请公开(公告)号：US20100112825A1
公开(公告)日：2010-05-06
申请号：US12290362
申请日：2008-10-30
申请人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
发明人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
IPC分类号： H01L21/265
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.
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公开(公告)号：US07927970B2
公开(公告)日：2011-04-19
申请号：US12369485
申请日：2009-02-11
IPC分类号： H01L21/30 , H01L21/46 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/26506
摘要： Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
摘要翻译： 公开了使用纯化离子淋浴制备SOI和SOG结构以将离子注入给体衬底的方法。 纯化的离子淋浴提供方便，高效，低成本和有效的离子注入，同时最小化对剥离膜的损害。
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公开(公告)号：US07608521B2
公开(公告)日：2009-10-27
申请号：US11444741
申请日：2006-05-31
CPC分类号： H01L21/76254 , H01L21/26506
摘要： Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
摘要翻译： 公开了使用纯化离子淋浴制备SOI和SOG结构以将离子注入给体衬底的方法。 纯化的离子淋浴提供方便，高效，低成本和有效的离子注入，同时最小化对剥离膜的损害。
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公开(公告)号：US20090149001A1
公开(公告)日：2009-06-11
申请号：US12369485
申请日：2009-02-11
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/26506
摘要： Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
摘要翻译： 公开了使用纯化离子淋浴制备SOI和SOG结构以将离子注入给体衬底的方法。 纯化的离子淋浴提供方便，高效，低成本和有效的离子注入，同时最小化对剥离膜的损害。
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6.发明申请METHODS AND APPARATUS FOR PRODUCING SEMICONDUCTOR ON INSULATOR STRUCTURES USING DIRECTED EXFOLIATION 失效使用方向分解生产绝缘体结构的半导体的方法和装置公开(公告)号：US20120028443A1
公开(公告)日：2012-02-02
申请号：US13253451
申请日：2011-10-05
申请人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
发明人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
IPC分类号： H01L21/78
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.
摘要翻译： 方法和装置提供用于形成绝缘体上半导体（SOI）结构，包括使施主半导体晶片的注入表面进行离子注入步骤，以在限定施主半导体晶片的剥离层的横截面中产生弱化片 ; 以及在所述离子注入步骤之前，期间或之后对所述施主半导体晶片进行空间变化步骤，使得所述弱化切片的至少一个参数在X轴和Y轴中的至少一个中在所述弱化切片之间空间上变化 方向。
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7.发明授权公开(公告)号：US08058148B2
公开(公告)日：2011-11-15
申请号：US12779606
申请日：2010-05-13
申请人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
发明人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.
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公开(公告)号：US20070281399A1
公开(公告)日：2007-12-06
申请号：US11444741
申请日：2006-05-31
IPC分类号： H01L21/84
CPC分类号： H01L21/76254 , H01L21/26506
摘要： Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
摘要翻译： 公开了使用纯化离子淋浴制备SOI和SOG结构以将离子注入给体衬底的方法。 纯化的离子淋浴提供方便，高效，低成本和有效的离子注入，同时最小化对剥离膜的损害。
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9.发明授权Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation 有权使用定向剥离制造绝缘体上半导体结构的方法和装置公开(公告)号：US07816225B2
公开(公告)日：2010-10-19
申请号：US12290362
申请日：2008-10-30
申请人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
发明人： Sarko Cherekdjian , Jeffrey Scott Cites , James Gregory Couillard , Richard Orr Maschmeyer , Michael John Moore , Alex Usenko
IPC分类号： H01L21/00
CPC分类号： H01L21/76254
摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X-and Y-axial directions.
摘要翻译： 方法和装置提供用于形成绝缘体上半导体（SOI）结构，包括使施主半导体晶片的注入表面进行离子注入步骤，以在限定施主半导体晶片的剥离层的横截面中产生弱化片 ; 以及在所述离子注入步骤之前，期间或之后对所述施主半导体晶片进行空间变化步骤，使得所述弱化切片的至少一个参数在所述弱化切片中在X轴和Y轴中的至少一个中在空间上变化 方向。
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公开(公告)号：US20070281440A1
公开(公告)日：2007-12-06
申请号：US11445036
申请日：2006-05-31
IPC分类号： H01L21/46
CPC分类号： H01L21/187
摘要： Disclosed are methods for making SOI and SOG structures using ion shower for implanting ions to the donor substrate. The ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
摘要翻译： 公开了使用离子淋浴制造SOI和SOG结构以将离子注入供体衬底的方法。 离子淋浴提供方便，高效，低成本和有效的离子注入，同时最大限度地减少对剥离膜的损伤。
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