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11.发明授权公开(公告)号：US08852679B2
公开(公告)日：2014-10-07
申请号：US13160732
申请日：2011-06-15
Applicant: Nikhil D. Kalyankar , Nitin Kumar , Zhi-Wen Sun , Kenneth A. Williams
Inventor： Nikhil D. Kalyankar , Nitin Kumar , Zhi-Wen Sun , Kenneth A. Williams
CPC classification number: C23C18/1254 , B01J19/0046 , B01J2219/0036 , B01J2219/00443 , B01J2219/00691 , B01J2219/00702 , B01J2219/00756 , C40B30/00 , C40B60/12 , Y10T428/2991
Abstract: Embodiments of the current invention describe a high performance combinatorial method and apparatus for the combinatorial development of coatings by a dip-coating process. The dip-coating process may be used for multiple applications, including forming coatings from varied sol-gel formulations, coating substrates uniformly with particles to combinatorially test particle removal formulations, and the dipping of substrates into texturing formulations to combinatorially develop the texturing formulations.
Abstract translation: 本发明的实施例描述了通过浸涂工艺组合开发涂层的高性能组合方法和装置。 浸涂方法可用于多种应用，包括由不同溶胶 - 凝胶制剂形成涂层，用颗粒均匀地涂覆底物以组合测试颗粒去除配方，以及将基材浸渍到变形配方中以组合开发变形配方。
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公开(公告)号：US08774179B1
公开(公告)日：2014-07-08
申请号：US12016740
申请日：2008-01-18
Applicant: Siva Gaggara , Nitin Kumar , Fritz Budiyanto
Inventor： Siva Gaggara , Nitin Kumar , Fritz Budiyanto
CPC classification number: H04L45/245 , H04L12/4695 , H04L47/41 , H04L47/827 , Y02D50/30
Abstract: A method is provided for handling member link state changes in an aggregate interface. An aggregate interface may be established to include a number of member links. A mask may be associated with the aggregate interface, where the mask identifies a current state of each member link in the aggregate interface. The mask is retrieved and used to identify active links in the aggregate interface when packets are received for forwarding on the aggregate interface.
Abstract translation: 提供了一种处理聚合接口中成员链路状态变化的方法。 可以建立聚合接口以包括多个成员链路。 掩码可以与聚合接口相关联，其中掩码标识聚合接口中每个成员链路的当前状态。 检索该掩码并用于标识聚合接口中的活动链路，当收到数据包以在聚合接口上进行转发时。
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公开(公告)号：US08686659B2
公开(公告)日：2014-04-01
申请号：US13169613
申请日：2011-06-27
Applicant: Nitin Kumar , Shashank Bakre , Thomas J. Schalton
Inventor： Nitin Kumar , Shashank Bakre , Thomas J. Schalton
IPC: H05B37/02
CPC classification number: H05B41/2806 , H05B37/0209 , Y02B20/22
Abstract: A ballast that selectively operates multiple lamps is provided. The ballast includes a switching network, capable of operating in a number of switching configurations. The ballast also includes a control circuit, and two lamp control switches. The control circuit is connected to the switching network, and provides respective control signals via respective output terminals as a function of the switching configuration of the switching network. Each lamp control switch is in parallel with its lamp and is connected to a respective output terminal. The first lamp control switch is connected to a ballast power supply, and either provides power to the first lamp or does not, depending on the first control signal. The second lamp control switch is connected to the first lamp control switch and to ground, and either provides power to the second lamp or does not, depending on the second control signal.
Abstract translation: 提供了选择性地操作多个灯的镇流器。 镇流器包括能够以多个开关配置操作的开关网络。 镇流器还包括一个控制电路和两个灯控制开关。 控制电路连接到交换网络，并根据交换网络的交换配置，通过相应的输出终端提供相应的控制信号。 每个灯控制开关与其灯并联并连接到相应的输出端。 第一灯控制开关连接到镇流器电源，并且根据第一控制信号向第一灯供电或不提供电源。 第二灯控制开关连接到第一灯控制开关并接地，并且根据第二控制信号向第二灯供电或不提供电源。
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公开(公告)号：US20140001971A1
公开(公告)日：2014-01-02
申请号：US13539402
申请日：2012-06-30
Applicant: Nitin Kumar , Markus Ziegler , Robert Martin , Shashank Bakre
Inventor： Nitin Kumar , Markus Ziegler , Robert Martin , Shashank Bakre
IPC: H05B37/02
CPC classification number: H05B41/2883 , H05B41/36
Abstract: A ballast for energizing a lamp at a lighting level selected from a plurality of lamp lighting levels. The ballast includes a buck converter circuit configured to receive a DC voltage signal having a substantially constant magnitude. The buck converter circuit has a duty cycle for generating a lamp voltage output signal from the DC voltage signal. The lamp voltage output signal has a magnitude that is varied by the duty cycle to energize the lamp at the plurality of lamp lighting levels. A controller is configured to receive a dim input signal indicative of the selected lamp lighting level and to provide a control signal to the buck converter circuit as a function of the dim input signal. The control signal indicates a particular duty cycle corresponding to a lamp voltage output signal having a magnitude for energizing the lamp at the selected lamp lighting level.
Abstract translation: 一种镇流器，用于在从多个灯照明水平中选择的照明水平上激发灯。 镇流器包括被配置为接收具有基本恒定幅度的DC电压信号的降压转换器电路。 降压转换器电路具有用于从直流电压信号产生灯电压输出信号的占空比。 灯电压输出信号具有由占空比变化的大小，以在多个灯照明电平下给灯供电。 控制器被配置为接收指示所选择的灯点亮电平的暗淡输入信号，并且作为所述暗淡输入信号的函数向所述降压转换器电路提供控制信号。 控制信号表示对应于灯电压输出信号的特定占空比，该灯电压输出信号具有在选定的灯照明电平下对灯进行激励的幅度。
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公开(公告)号：US08569966B2
公开(公告)日：2013-10-29
申请号：US13302075
申请日：2011-11-22
Applicant: Nitin Kumar , Shashank Bakre , Markus Ziegler
Inventor： Nitin Kumar , Shashank Bakre , Markus Ziegler
CPC classification number: H05B41/042 , H05B41/2806 , Y02B20/22
Abstract: A ballast to energize a lamp is provided. The ballast comprises a buck converter connected to an inverter via a switching component. The buck converter includes a transistor, a capacitor, a diode, and an inductor. The switching component has a predetermined breakover voltage value and is configured to provide a start up signal to the inverter when voltage at the switching component increases to the predetermined breakover voltage value. A control circuit is configured to monitor the voltage at the switching component while the voltage at the switching component increases to the predetermined breakover voltage, and is configured to generate a gate drive pulse at a gate terminal of the transistor when the voltage at the switching component reaches a predetermined voltage that is less than the breakover voltage of the switching component.
Abstract translation: 提供了一个用于激励灯的镇流器。 镇流器包括通过开关部件连接到逆变器的降压转换器。 降压转换器包括晶体管，电容器，二极管和电感器。 开关部件具有预定的分解电压值，并且被配置为当开关部件的电压增加到预定的转折电压值时，向逆变器提供启动信号。 控制电路被配置为在切换部件处的电压升高到预定的断开电压时监视开关部件的电压，并且被配置为当开关部件的电压为阈值时，在晶体管的栅极端产生栅极驱动脉冲 达到小于开关部件的断流电压的预定电压。
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Patent Agency Ranking
公开(公告)号：US08559414B2
公开(公告)日：2013-10-15
申请号：US13031188
申请日：2011-02-19
Applicant: Selma Yilmaz , Keyur Patel , Nitin Kumar , Robert Raszuk , Satish Mynam
Inventor： Selma Yilmaz , Keyur Patel , Nitin Kumar , Robert Raszuk , Satish Mynam
IPC: H04L12/28
Abstract: In an embodiment, a method comprises receiving a path advertisement comprising information about an available path and a well-known community value associated with the available path. A modified best path calculation is performed in response to receiving the available path either from a higher-ranked device or from a device that is not participating in diverse path calculation, resulting in creating a particular best path. The particular best path is advertised to other routers with or without a restriction indicator based on whether it is a client learned path or non-client iBGP peer learned path and based on whether the advertisement is directed to a client or a non-client iBGP peer.
Abstract translation: 在一个实施例中，一种方法包括接收包括关于可用路径的信息和与可用路径相关联的公知社区值的路径通告。 响应于从更高排名的设备或不参与不同路径计算的设备接收可用路径而执行修改的最佳路径计算，导致创建特定的最佳路径。 根据客户端学习路径还是非客户端iBGP对等体学习路径，并根据广告是指向客户端还是非客户端iBGP对等体，将特定最佳路径通告给具有或不具有限制指示符的其他路由器 。
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公开(公告)号：US08476107B2
公开(公告)日：2013-07-02
申请号：US13096719
申请日：2011-04-28
Applicant: Nitin Kumar , Chi-I Lang , Tony Chiang , Zhi-Wen Sun , Jinhong Tong
Inventor： Nitin Kumar , Chi-I Lang , Tony Chiang , Zhi-Wen Sun , Jinhong Tong
IPC: H01L21/00
CPC classification number: H01L45/145 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1633
Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
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公开(公告)号：US20120206059A1
公开(公告)日：2012-08-16
申请号：US13024443
申请日：2011-02-10
Applicant: Nitin Kumar , Shashank Bakre , Thomas J. Schalton
Inventor： Nitin Kumar , Shashank Bakre , Thomas J. Schalton
IPC: H05B41/24
CPC classification number: H05B41/2827 , H02M7/53832 , H05B41/42 , Y02B20/185
Abstract: A two level lighting ballast is provided, which includes a self-oscillating inverter circuit and a control circuit. The inverter includes an input; an output to selectively provide current to energize a lamp; a switching circuit operating at a switching frequency; a feedback transformer; and an impedance component. The feedback transformer is connected to the output, and drives the switching circuit based on the lamp current. The impedance component is connected in parallel with the feedback transformer, and is operated by the control circuit. When the control circuit enables the impedance component, the switching circuit operates in a first frequency range, and a first lamp current is provided. When the control circuit disables the impedance component, the switching circuit operates in a second frequency range, and a second lamp current is provided. The first frequency range is lower than the second, and the first lamp current is greater than the second.
Abstract translation: 提供了两级照明镇流器，其包括自振荡逆变器电路和控制电路。 逆变器包括一个输入端; 输出以选择性地提供电流以激励灯; 以开关频率工作的开关电路; 反馈变压器; 和阻抗分量。 反馈变压器连接到输出，并根据灯电流驱动开关电路。 阻抗元件与反馈变压器并联，由控制电路工作。 当控制电路使能阻抗分量时，开关电路在第一频率范围内工作，并提供第一灯电流。 当控制电路禁止阻抗分量时，开关电路在第二频率范围内工作，并提供第二灯电流。 第一个频率范围低于第二个频率范围，第一个灯电流大于第二个。
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公开(公告)号：US20110201149A1
公开(公告)日：2011-08-18
申请号：US13096719
申请日：2011-04-28
Applicant: Nitin Kumar , Chi-I Lang , Tony Chiang , Zhi-wen Sun , Jinhong Tong
Inventor： Nitin Kumar , Chi-I Lang , Tony Chiang , Zhi-wen Sun , Jinhong Tong
IPC: H01L21/8239
CPC classification number: H01L45/145 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1633
Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。
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公开(公告)号：US07972897B2
公开(公告)日：2011-07-05
申请号：US11702966
申请日：2007-02-05
Applicant: Nitin Kumar , Chi-I Lang , Tony Chiang , Zhi-wen Sun , Jinhong Tong
Inventor： Nitin Kumar , Chi-I Lang , Tony Chiang , Zhi-wen Sun , Jinhong Tong
IPC: H01L21/00
CPC classification number: H01L45/145 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1633
Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。
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