摘要:
The photosensitive composition, which is suitable as a photoresist material in fine patterning works for the manufacture of semiconductor devices, contains, as a photoextinctive agent, a combination of an alkali-insoluble dye and an alkali-soluble dye each having absorptivity of light in the wavelength region from 230 to 500 nm in a specified amount and in a specified ratio between them. By virtue of the formulation of combined dyes, the undesirable phenomenon of halation by the underlying aluminum coating layer on the substrate surface is greatly decreased so that patterned resist layer obtained with the composition is a high-fidelity reproduction of the original pattern even in a submicron range of fineness with good rectangularity of the cross sectional form of the patterned lines.
摘要:
A high quality ink jet recording medium with a printed image non-vulnerable and excellent in scratch resistance is obtained with an ink jet recording using a water pigment ink. An ink jet recording medium having a substrate and an ink receiving layer including an inorganic particle and a binder on the substrate is provided. A surface of the ink receiving layer has (a) a projected valley portion depth (Rvk) of not less than 20 nm and not more than 100, (b) an arithmetic average roughness (Ra) of not less than 5 nm and not more than 100 nm, and (c) an average spacing (S) of local peaks of not more than 1.0 μm.
摘要:
An improvement is proposed in a double-coated patterning plate, which consists of a substrate, an undercoat levelling layer and a photoresist layer thereon, as well as in the patterning method therewith. Different from conventional double-coated patterning plate in which the undercoat levelling layer is formed from poly(methyl methacrylate) resin, the layer in the invention is formed from a copolymeric resin of methyl methacrylate and glycidyl methacrylate in a specified copolymerization ratio and the resin is admixed with 2,2',4,4'-tetrahydroxybenzophenone. By virtue of the use of this unique resin composition for the undercoat levelling layer, the troubles due to intermixing between the undercoat levelling layer and the photoresist layer thereon can be avoided to impart the patterned resist layer with excellent properties.
摘要:
Disclosed is a positive-working photoresist composition used in the photolithographic patterning work for the manufacture of various electronic devices such as VLSIs having improved characteristics, in particular, in respect of the halation-preventing effect. In addition to the conventional ingredients of (a) an alkali-soluble novolac resin as a film-forming agent and (b) a naphthoquinonediazide group-containing compound as a photosensitizing agent, the composition is formulated by the admixture of a specific amount of (c) a halation-preventing agent which is a combination of, one, (c1) a 4,4'-bis(dialkylamino) benzophenone compound and, the other, (c2) a compound selected from the group consisting of polyhydroxy benzophenone compounds, amino- and hydroxy-containing benzophenone compounds and 4-pyrazolylazo compounds in a specific weight proportion of (c1):(c2).
摘要:
A novel alkali-developable photosensitive resin composition, which is suitable for use as a photoresist composition for fine patterning in the manufacture of various electronic devices, is proposed. The photosensitive resin composition comprises, as the essential ingredients, (a) an alkali-soluble novolac resin as the film-forming ingredient and (b) a very specific compound which is a 1,2-quinone diazide sulfonic acid ester of a condensation product having a weight-average molecular weight of 400 to 2000 obtained by the condensation reaction between phenol and a hydroxybenzaldehyde in the presence of an acidic catalyst as the photosensitizing agent. By virtue of the formulation with this specific photosensitizer, the resist layer formed from the inventive composition has a greatly increased focusing latitude in addition to the excellent sensitivity, resolution and heat resistance.
摘要:
A positive-working photosensitive resin composition useful as a photoresist material in the fine patterning work for the manufacture of semiconductor devices is proposed. The composition is excellent in the storage stability and capable of giving a patterned resist layer having good film thickness retention, cross sectional profile of line patterns, resolution and heat resistance. The composition comprises, in addition to a conventional alkali-soluble novolac resin as a film-forming agent and a quinone diazide group containing compound as a photosensitizing agent, a specific isocyanurate compound substituted at each nitrogen atom with a hydroxy- and ter-butyl-substituted benzyl group.