公开(公告)号：US4882260A

公开(公告)日：1989-11-21

申请号：US059556

申请日：1987-06-05

申请人： Hidekatsu Kohara ,  Nobuo Tokutake ,  Masanori Miyabe ,  Toshimasa Nakayama ,  Shingo Asaumi ,  Hatsuyuki Tanaka ,  Yoshiaki Arai

发明人： Hidekatsu Kohara ,  Nobuo Tokutake ,  Masanori Miyabe ,  Toshimasa Nakayama ,  Shingo Asaumi ,  Hatsuyuki Tanaka ,  Yoshiaki Arai

IPC分类号： G03C1/00 ,  C09D161/08 ,  G03C1/72 ,  G03F7/004 ,  G03F7/022 ,  G03F7/025 ,  G03F7/04 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/091

摘要： The photosensitive composition, which is suitable as a photoresist material in fine patterning works for the manufacture of semiconductor devices, contains, as a photoextinctive agent, a combination of an alkali-insoluble dye and an alkali-soluble dye each having absorptivity of light in the wavelength region from 230 to 500 nm in a specified amount and in a specified ratio between them. By virtue of the formulation of combined dyes, the undesirable phenomenon of halation by the underlying aluminum coating layer on the substrate surface is greatly decreased so that patterned resist layer obtained with the composition is a high-fidelity reproduction of the original pattern even in a submicron range of fineness with good rectangularity of the cross sectional form of the patterned lines.

摘要翻译： 在制造半导体器件的精细图案化中适合作为光致抗蚀剂材料的光敏组合物包含作为光敏剂的碱不溶性染料和碱溶性染料的组合，其中每种具有光吸收性的染料 波长范围为230〜500nm，以规定的量和它们之间的规定比例。 由于组合染料的配制，基板表面上的下面的铝涂层的不期望的卤化现象大大降低，使得用该组合物获得的图案化抗蚀剂层即使在亚微米中也是原始图案的高保真再现 图案线的横截面形状的良好矩形度的细度范围。

公开(公告)号：US4731319A

公开(公告)日：1988-03-15

申请号：US886839

申请日：1986-07-18

申请人： Hidekatsu Kohara ,  Hatsuyuki Tanaka ,  Masanori Miyabe ,  Yoshiaki Arai ,  Shingo Asaumi ,  Toshimasa Nakayama

发明人： Hidekatsu Kohara ,  Hatsuyuki Tanaka ,  Masanori Miyabe ,  Yoshiaki Arai ,  Shingo Asaumi ,  Toshimasa Nakayama

IPC分类号： G03C1/72 ,  G03F7/022 ,  G03F7/023 ,  H01L21/027 ,  G03C1/54 ,  G03C1/60

CPC分类号： G03F7/0236

摘要： A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g. VLSIs, with high fidelity is proposed. The composition comprises a cresol novolac resin and a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is characteristically a combination of two different cresol novolac resins differentiated in respects of the weight-average molecular weight, one large and the other small, and the weight proportion of the m- and p-isomers of cresol, one rich in the m-isomer and the other rich in the p-isomer, used in the preparation of the novolac and the overall weight ratio of the m-cresol and p-cresol moieties in the thus combined cresol novolac resins also should be in a specified range.

摘要翻译： 适用于制造半导体器件的精细图案化的正性光致抗蚀剂组合物，例如， 提出了高保真的VLSI。 该组合物包含甲酚酚醛清漆树脂和萘醌二叠氮化物磺酸酯作为感光组分，而甲酚酚醛清漆树脂组分特征是两种不同甲酚酚醛清漆树脂的组合，其重均分子量分别为大，一 小的，并且用于制备酚醛清漆的甲酚和m-异构体的m-和p-异构体的重量比例，其中一个富含m-异构体和另一个富含p-异构体的重量比例， 这样组合的甲酚酚醛清漆树脂中的甲酚和对甲酚部分也应在特定的范围内。

公开(公告)号：US5281508A

公开(公告)日：1994-01-25

申请号：US935131

申请日：1992-08-21

申请人： Hidekatsu Kohara ,  Hatsuyuki Tanaka ,  Masanori Miyabe ,  Yoshiaki Arai ,  Shingo Asaumi ,  Toshimasa Nakayama ,  Akira Yokota ,  Hisashi Nakane

发明人： Hidekatsu Kohara ,  Hatsuyuki Tanaka ,  Masanori Miyabe ,  Yoshiaki Arai ,  Shingo Asaumi ,  Toshimasa Nakayama ,  Akira Yokota ,  Hisashi Nakane

IPC分类号： C08G8/08 ,  C08K5/42 ,  G03F7/032 ,  G03F7/023

CPC分类号： G03F7/032 ,  C08G8/08 ,  C08K5/42

摘要： A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g., VLSIs, with high fidelity is proposed. The composition comprises 100 parts by weight of a cresol novolac resin and 25-60 parts by weight of a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is prepared from a mixture of cresol isomers composed of 35-43% of m-cresol and 65-57% of p-cresol with substantial absence of o-cresol or composed of 35-43% of m-cresol, 65-57% of p-cresol and 1% or less of o-cresol.

摘要翻译： 提出了适用于制造高保真度的半导体器件（例如VLSI）中的精细图案化的正性光致抗蚀剂组合物。 该组合物包含100重量份的甲酚酚醛清漆树脂和25-60重量份的萘醌二叠氮化物磺酸酯作为感光组分，而甲酚酚醛清漆树脂组分由由35-43％ 的间甲酚和65-57％的对甲酚，基本上没有邻甲酚或由35-43％的间甲酚，65-57％的对甲酚和1％或更少的邻甲酚组成。

公开(公告)号：US4906549A

公开(公告)日：1990-03-06

申请号：US182848

申请日：1988-04-18

申请人： Shingo Asaumi ,  Hidekatsu Kohara ,  Hatsuyuki Tanaka ,  Masanori Miyabe ,  Toshimasa Nakayama

发明人： Shingo Asaumi ,  Hidekatsu Kohara ,  Hatsuyuki Tanaka ,  Masanori Miyabe ,  Toshimasa Nakayama

IPC分类号： G03C1/72 ,  C08G8/12 ,  C08G8/24 ,  C08K5/43 ,  C08L61/08 ,  G03F7/023 ,  G03F7/025 ,  G03F7/22 ,  H01L21/027

CPC分类号： G03F7/0236 ,  C08G8/12 ,  C08G8/24 ,  C08K5/43

摘要： A positive-working photoresist composition suitable for fine patterning in the manufacturing of semiconductor devices such as VLSIs with high fidelity is proposed. The composition comprises: (A) 100 parts by weight of a phenolic novolac resin prepared by the condensation reaction of a specific ternary mixture of three kinds of phenolic compounds and formaldehyde; and (B) 20-60 parts by weight of a photosensitizer which is preferably an ester of naphthoquinone diazidesulfonic acid and a hydroxylated benzophenone compound. The phenolic mixture is composed of 10-45% by weight of m-cresol, 35-88% by weight of p-cresol and 2-30% by weight of a substituted phenol represented by the general formula R.C.sub.6 H.sub.4.OH, in which R is a monovalent aliphatic hydrocarbon group having 2-6 carbon atoms selected from alkyl and alkenyl groups.

摘要翻译： 提出了适用于制造半导体器件（例如具有高保真度的VLSI）的精细图案化的正性光致抗蚀剂组合物。 该组合物包括：（A）100重量份通过三种酚类化合物和甲醛的特定三元混合物的缩合反应制备的酚醛清漆树脂; 和（B）20-60重量份的优选萘醌二叠氮磺酸和羟基化二苯甲酮化合物的酯的光敏剂。 酚类混合物由10-45重量％的间甲酚，35-88重量％的对甲酚和2-30重量％的由通式R.C 6 H 4.OH表示的取代的苯酚组成，在 其中R为选自烷基和烯基的2-6个碳原子的一价脂族烃基。

公开(公告)号：US5180653A

公开(公告)日：1993-01-19

申请号：US693664

申请日：1991-04-30

申请人： Masanori Miyabe ,  Hidekatsu Kohara ,  Toshimasa Nakayama

发明人： Masanori Miyabe ,  Hidekatsu Kohara ,  Toshimasa Nakayama

IPC分类号： C08K5/3492 ,  C08L61/06

CPC分类号： C08K5/3492 ,  C08L61/06 ,  Y10S430/143

摘要： An electron beam-curable resist composition suitable for fine patterning works in the manufacturing process of semiconductor devices is proposed which is outstandingly stable in storage and capable of being developed using an aqueous alkaline developer solution without scums and giving a patterned resist layer with high contrast and orthogonal cross sectional profile of a line pattern. The composition comprises (A) a triazine compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (B) a cresol novolac resin, of which at least 30% by weight of the phenolic moiety is derived from m-cresol, and (C) an alkoxymethylated melamine resin in specified proportions of (B):(C) and (A):[(B)+(C)]. The sensitivity of the resist composition is greatly enhanced by a heat treatment of the resist layer at 90.degree.-140.degree. C. after patternwise irradiation with electron beams.

摘要翻译： 提出了一种适用于半导体器件制造工艺中精细图案化的电子束固化型抗蚀剂组合物，其在储存中非常稳定，并且能够使用不含浮渣的碱性显影剂水溶液显影，并提供具有高对比度的图案化抗蚀剂层， 线图案的正交横截面轮廓。 组合物包含（A）三嗪化合物，例如2-（4-甲氧基苯基）-4,6-双（三氯甲基）-1,3,5-三嗪，（B）甲酚酚醛清漆树脂，其中至少30 酚类部分的重量百分比来自间甲酚，（C）（B）:( C）和（A）：[（B）+（C）]的规定比例的烷氧基甲基化三聚氰胺树脂。 通过在用电子束图案照射之后，在90℃-140℃下对抗蚀剂层进行热处理，抗蚀剂组合物的灵敏度大大提高。

公开(公告)号：US5057397A

公开(公告)日：1991-10-15

申请号：US438334

申请日：1989-11-16

申请人： Masanori Miyabe ,  Hidekatsu Kohara ,  Toshimasa Nakayama

发明人： Masanori Miyabe ,  Hidekatsu Kohara ,  Toshimasa Nakayama

IPC分类号： G03F7/038 ,  C08F2/46 ,  C08K5/3492 ,  C08L61/06 ,  C08L61/08 ,  G03F7/004 ,  H01L21/027

CPC分类号： C08K5/3492 ,  C08L61/06 ,  Y10S430/121 ,  Y10S430/128 ,  Y10S430/143

摘要： An electron beam-curable resist composition suitable for fine patterning works in the manufacturing process of semiconductor devices is proposed which is outstandingly stable in storage and capable of being developed using an aqueous alkaline developer solution without scums and giving a patterned resist layer with high contrast and orthogonal cross sectional profile of a line pattern. The composition comprises (A) a triazine compound, such as 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine, (B) a cresol novolac resin, of which at least 30% by weight of the phenolic moiety is derived from m-cresol, and (C) an alkoxymethylated melamine resin in specified proportions of (B):(C) and (A):[(B)+(C)]. The sensitivity of the resist composition is greatly enhanced by a heat treatment of the resist layer at 90.degree.-140.degree. C. after patternwise irradiation with electron beams.

摘要翻译： 提出了一种适用于半导体器件制造工艺中精细图案化的电子束固化型抗蚀剂组合物，其在储存中非常稳定，并且能够使用不含浮渣的碱性显影剂水溶液显影，并提供具有高对比度的图案化抗蚀剂层， 线图案的正交横截面轮廓。 组合物包含（A）三嗪化合物，例如2-（4-甲氧基苯基）-4,6-双（三氯甲基）-1,3,5-三嗪，（B）甲酚酚醛清漆树脂，其中至少30 酚类部分的重量百分比来自间甲酚，（C）（B）:( C）和（A）：[（B）+（C）]的规定比例的烷氧基甲基化三聚氰胺树脂。 通过在用电子束图案照射之后，在90℃-140℃下对抗蚀剂层进行热处理，抗蚀剂组合物的灵敏度大大提高。