公开(公告)号：US4882260A

公开(公告)日：1989-11-21

申请号：US059556

申请日：1987-06-05

申请人： Hidekatsu Kohara ,  Nobuo Tokutake ,  Masanori Miyabe ,  Toshimasa Nakayama ,  Shingo Asaumi ,  Hatsuyuki Tanaka ,  Yoshiaki Arai

发明人： Hidekatsu Kohara ,  Nobuo Tokutake ,  Masanori Miyabe ,  Toshimasa Nakayama ,  Shingo Asaumi ,  Hatsuyuki Tanaka ,  Yoshiaki Arai

IPC分类号： G03C1/00 ,  C09D161/08 ,  G03C1/72 ,  G03F7/004 ,  G03F7/022 ,  G03F7/025 ,  G03F7/04 ,  G03F7/09 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/091

摘要： The photosensitive composition, which is suitable as a photoresist material in fine patterning works for the manufacture of semiconductor devices, contains, as a photoextinctive agent, a combination of an alkali-insoluble dye and an alkali-soluble dye each having absorptivity of light in the wavelength region from 230 to 500 nm in a specified amount and in a specified ratio between them. By virtue of the formulation of combined dyes, the undesirable phenomenon of halation by the underlying aluminum coating layer on the substrate surface is greatly decreased so that patterned resist layer obtained with the composition is a high-fidelity reproduction of the original pattern even in a submicron range of fineness with good rectangularity of the cross sectional form of the patterned lines.

摘要翻译： 在制造半导体器件的精细图案化中适合作为光致抗蚀剂材料的光敏组合物包含作为光敏剂的碱不溶性染料和碱溶性染料的组合，其中每种具有光吸收性的染料 波长范围为230〜500nm，以规定的量和它们之间的规定比例。 由于组合染料的配制，基板表面上的下面的铝涂层的不期望的卤化现象大大降低，使得用该组合物获得的图案化抗蚀剂层即使在亚微米中也是原始图案的高保真再现 图案线的横截面形状的良好矩形度的细度范围。

公开(公告)号：US4731319A

公开(公告)日：1988-03-15

申请号：US886839

申请日：1986-07-18

申请人： Hidekatsu Kohara ,  Hatsuyuki Tanaka ,  Masanori Miyabe ,  Yoshiaki Arai ,  Shingo Asaumi ,  Toshimasa Nakayama

发明人： Hidekatsu Kohara ,  Hatsuyuki Tanaka ,  Masanori Miyabe ,  Yoshiaki Arai ,  Shingo Asaumi ,  Toshimasa Nakayama

IPC分类号： G03C1/72 ,  G03F7/022 ,  G03F7/023 ,  H01L21/027 ,  G03C1/54 ,  G03C1/60

CPC分类号： G03F7/0236

摘要： A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g. VLSIs, with high fidelity is proposed. The composition comprises a cresol novolac resin and a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is characteristically a combination of two different cresol novolac resins differentiated in respects of the weight-average molecular weight, one large and the other small, and the weight proportion of the m- and p-isomers of cresol, one rich in the m-isomer and the other rich in the p-isomer, used in the preparation of the novolac and the overall weight ratio of the m-cresol and p-cresol moieties in the thus combined cresol novolac resins also should be in a specified range.

摘要翻译： 适用于制造半导体器件的精细图案化的正性光致抗蚀剂组合物，例如， 提出了高保真的VLSI。 该组合物包含甲酚酚醛清漆树脂和萘醌二叠氮化物磺酸酯作为感光组分，而甲酚酚醛清漆树脂组分特征是两种不同甲酚酚醛清漆树脂的组合，其重均分子量分别为大，一 小的，并且用于制备酚醛清漆的甲酚和m-异构体的m-和p-异构体的重量比例，其中一个富含m-异构体和另一个富含p-异构体的重量比例， 这样组合的甲酚酚醛清漆树脂中的甲酚和对甲酚部分也应在特定的范围内。

公开(公告)号：US5281508A

公开(公告)日：1994-01-25

申请号：US935131

申请日：1992-08-21

申请人： Hidekatsu Kohara ,  Hatsuyuki Tanaka ,  Masanori Miyabe ,  Yoshiaki Arai ,  Shingo Asaumi ,  Toshimasa Nakayama ,  Akira Yokota ,  Hisashi Nakane

发明人： Hidekatsu Kohara ,  Hatsuyuki Tanaka ,  Masanori Miyabe ,  Yoshiaki Arai ,  Shingo Asaumi ,  Toshimasa Nakayama ,  Akira Yokota ,  Hisashi Nakane

IPC分类号： C08G8/08 ,  C08K5/42 ,  G03F7/032 ,  G03F7/023

CPC分类号： G03F7/032 ,  C08G8/08 ,  C08K5/42

摘要： A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g., VLSIs, with high fidelity is proposed. The composition comprises 100 parts by weight of a cresol novolac resin and 25-60 parts by weight of a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is prepared from a mixture of cresol isomers composed of 35-43% of m-cresol and 65-57% of p-cresol with substantial absence of o-cresol or composed of 35-43% of m-cresol, 65-57% of p-cresol and 1% or less of o-cresol.

摘要翻译： 提出了适用于制造高保真度的半导体器件（例如VLSI）中的精细图案化的正性光致抗蚀剂组合物。 该组合物包含100重量份的甲酚酚醛清漆树脂和25-60重量份的萘醌二叠氮化物磺酸酯作为感光组分，而甲酚酚醛清漆树脂组分由由35-43％ 的间甲酚和65-57％的对甲酚，基本上没有邻甲酚或由35-43％的间甲酚，65-57％的对甲酚和1％或更少的邻甲酚组成。

公开(公告)号：US20080142354A1

公开(公告)日：2008-06-19

申请号：US10566905

申请日：2004-07-30

申请人： Keiichi Yokoyama ,  Masaaki Fujiwara ,  Sadatoshi Ueda ,  Yoshiaki Arai ,  Tatsushi Kudo ,  Shigeru Miyahara

发明人： Keiichi Yokoyama ,  Masaaki Fujiwara ,  Sadatoshi Ueda ,  Yoshiaki Arai ,  Tatsushi Kudo ,  Shigeru Miyahara

IPC分类号： C10B35/00 ,  C10B31/00

CPC分类号： C10B53/02 ,  C10B49/04 ,  C10J3/482 ,  C10J2300/0956 ,  Y02E50/14 ,  Y02P20/129

摘要： To make it easier to carbonize the processing target material to a desired carbonized condition and also to make installment within a limited installment space possible. A carbonizing apparatus includes a carbonizing furnace having a feeding portion for a processing target material, a takeout portion for a carbonized material, a blowout portion for combustion air and an exhausting portion for combustion exhaust gas and a stirring device capable of stirring the processing target material inside the carbonizing furnace. The blowout amount of the combustion air is adjustable. The apparatus is operable to carbonize the processing target material fed from the feeding portion, with stirring, spontaneously combusting and moving the material while moving this material toward the takeout portion and subsequently to take out the resultant carbonized material from the takeout portion. The carbonizing furnace is constructed as a vertical type including the feeding portion and the exhausting portion at an upper section of the furnace and including the takeout portion and the blowout portion at a lower section of the furnace, so that the processing target material can be moved by the deadweight thereof toward the takeout portion, a takeout speed of the carbonized material from the takeout portion being adjustable. The stirring device includes a stirring member capable of swiveling about a vertical axis X.

摘要翻译： 为了使处理目标材料碳化成期望的碳化状态并且还可以在有限的安装空间内进行安装。 碳化装置包括碳化炉，其具有用于加工对象材料的进料部分，用于碳化材料的取出部分，用于燃烧空气的吹出部分和用于燃烧废气的排出部分，以及能够搅拌处理目标材料的搅拌装置 在碳化炉内。 燃烧空气的喷出量是可调节的。 该装置可操作地将从进料部分供给的处理目标材料碳化，同时搅拌，自动燃烧和移动材料，同时将该材料朝向取出部分移动，然后从取出部分取出生成的碳化材料。 碳化炉构成为在炉的上部具有供给部和排气部的垂直型，在炉的下部具有取出部和吹出部，能够移动加工对象物 通过其自重朝向取出部分，来自取出部分的碳化材料的取出速度是可调节的。 搅拌装置包括能够围绕垂直轴线X旋转的搅拌构件。

公开(公告)号：US20050218572A1

公开(公告)日：2005-10-06

申请号：US10502402

申请日：2002-12-27

申请人： Eiichi Soga ,  Yoshiaki Arai ,  Keisuke Yokota

发明人： Eiichi Soga ,  Yoshiaki Arai ,  Keisuke Yokota

IPC分类号： F16F1/06 ,  F16F1/13

CPC分类号： F16F1/13

摘要： In a coil spring of closed-end type, the coil spring is characterized in that a coupler is fixedly mounted between: an outer peripheral surface of a terminal convolution of a coil element rod; and, an outer peripheral surface of a subsequent convolution subsequent to the terminal convolution of the coil spring of closed-end type, whereby an amount of initial deflection is decreased.

摘要翻译： 在封闭式螺旋弹簧中，螺旋弹簧的特征在于，耦合器固定地安装在线圈元件杆的端部卷绕的外周表面之间; 以及在封闭端型螺旋弹簧的端部卷绕之后的后续卷绕的外周表面，由此初始偏转量减小。

公开(公告)号：US4980015A

公开(公告)日：1990-12-25

申请号：US360126

申请日：1989-06-01

申请人： Naoki Ono ,  Michio Kida ,  Yoshiaki Arai ,  Kensho Sahira

发明人： Naoki Ono ,  Michio Kida ,  Yoshiaki Arai ,  Kensho Sahira

IPC分类号： C30B15/04 ,  C30B15/12

CPC分类号： C30B15/04 ,  C30B15/12 ,  Y10T117/1052

摘要： In a method for pulling a single crystal, employing a double crucible assembly, the dopant concentration of the molten raw material in an inner crucible prior to the pulling, is raised to a value higher than the dopant concentration C of the molten raw material in the inner crucible at the steady state. Furthermore, at the initial stage of the pulling, the raw material having a dopant content ratio of no greater than kC is introduced into the outer crucible at a rate greater than the rate of decrease of the molten raw material within the inner crucible during the pulling, to achieve a concentration ratio of dopant between the inner and outer crucibles at a target value. Subsequently, the raw material having kC as the dopant content ratio is introduced into the outer crucible, at a rate equal to the rate of decrease of the molten raw material during the pulling.

公开(公告)号：US4936949A

公开(公告)日：1990-06-26

申请号：US201018

申请日：1988-06-01

申请人： Michio Kida ,  Yoshiaki Arai ,  Kensho Sahira

发明人： Michio Kida ,  Yoshiaki Arai ,  Kensho Sahira

IPC分类号： C30B15/12

CPC分类号： C30B15/12 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068

摘要： An apparatus for melting a semiconductor material and growing a semiconductor crystal from the melted material includes a susceptor having a peripheral rim, a quartz crucible assembly for receiving the semiconductor material therein. The crucible assembly includes an outer crucible housed in and supported by the susceptor and an inner crucible adapted to be so placed within the outer crucible as to define a multi-wall structure. The apparatus also includes at least one fluid passage for permitting the melted material to flow between the inner and outer crucibles when the multi-wall structure is defined by the inner and outer crucibles, a holder for holding the inner crucible, a heater disposed so as to surround the susceptor for heating the material in the crucible assembly, and a drive mechanism operable to move at least one of the holder and the susceptor vertically between a coupled position where the holder is supported by the susceptor in such a manner that the inner crucible is so placed within the outer crucible as to define the multi-wall structure and a released position where the holder is disengaged from the susceptor in such a manner that the inner crucible is released from the outer crucible.There is also provided a process which may be conveniently carried out in the apparatus described above.

公开(公告)号：US06261364B1

公开(公告)日：2001-07-17

申请号：US09144454

申请日：1998-09-01

申请人： Yoshiaki Arai ,  Keisei Abe ,  Norihisa Machida

发明人： Yoshiaki Arai ,  Keisei Abe ,  Norihisa Machida

IPC分类号： C30B3500

CPC分类号： C30B29/06 ,  C30B15/12 ,  C30B15/14 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1084

摘要： A system for growing high-quality, low-carbon-concentration single crystals which have an excellent gas-flow guiding function near the melt, containing 1) an inverted conical, flow-guide cover placed above and coaxially with a double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the single crystal to be grown and the inner surface of the sidewall of the inner crucible; 2) a short passage comprising a hole passing through the sidewall of the inner crucible at a position higher than the level of the melt; and 3) a flow guide cylinder placed above and coaxially with the double-walled crucible, with its lower end located immediately above the surface of the melt and in the space between the outer surface of the sidewall of the inner crucible and the inner surface of the sidewall of the outer crucible, all arranged in a furnace.

摘要翻译： 一种用于生长在熔体附近具有优异的气流引导功能的高质量低碳浓度单晶的系统，其包含1）倒置的锥形导流盖，其位于双壁坩埚的上方并与其同轴， 其下端位于熔体表面的正上方，并且在要生长的单晶的外表面与内坩埚的侧壁的内表面之间的空间中; 2）短通道，其包括穿过内坩埚的侧壁在高于熔体高度的位置的孔; 和3）设置在双壁坩埚上方并同轴的导流筒，其下端位于熔体表面的正上方，并且位于内坩埚的侧壁的外表面与内坩埚的内表面之间的空间中 外坩埚的侧壁均布置在炉中。

公开(公告)号：US5196173A

公开(公告)日：1993-03-23

申请号：US420518

申请日：1989-10-12

申请人： Yoshiaki Arai ,  Michio Kida ,  Naoki Ono ,  Kensho Sahira

发明人： Yoshiaki Arai ,  Michio Kida ,  Naoki Ono ,  Kensho Sahira

IPC分类号： C30B15/12 ,  H01L21/208

CPC分类号： C30B15/12 ,  Y10S117/90 ,  Y10T117/1052

摘要： In apparatuses for melting semiconductor material and growing single crystals of semiconductor material, the apparatus comprising:(a) a furnace,(b) a cylindrical double crucible assembly comprising an inner crucible in which single crystals of semiconductor material are grown at a vertical-concentric line thereof, the inner crucible having an upper part and a lower part, and an outer crucible in which melted semiconductor material is received, the outer crucible having the inner crucible disposed therein,(c) a susceptor for supporting the outer crucible,(d) rotating means for rotating the susceptor,(e) a feed pipe for supplying starting material in the space formed between the inner and the outer crucibles,(f) fluid-passage means for permitting the melted semiconductor material to flow between the inner and outer crucibles, the fluid-passage means being disposed at the lower part of the inner crucible, andwherein the inner crucible being set inside the outer crucible in a separable manner, the apparatus improved comprising:(g) joining means for setting the inner crucible inside the outer crucible concentrically, the joining means being disposed inside the furnace, and(h) engaging means for engaging the inner crucible and joining means detachably, the engaging means being disposed at the upper part of the inner crucible so as to engage a respective joining means.

公开(公告)号：US5080873A

公开(公告)日：1992-01-14

申请号：US521683

申请日：1990-05-10

申请人： Naoki Ono ,  Michio Kida ,  Yoshiaki Arai ,  Kensho Sahira

发明人： Naoki Ono ,  Michio Kida ,  Yoshiaki Arai ,  Kensho Sahira

IPC分类号： B01J4/00 ,  C30B15/02

CPC分类号： C30B15/02 ,  B01J4/001 ,  Y10S117/90 ,  Y10S117/912 ,  Y10T117/1052 ,  Y10T117/1056

摘要： A crystal growing apparatus includes a crucible, a feed pipe and a pulling mechanism. The crucible serves to melt a crystalline material. The feed pipe serves to cause the crystalline material to fall into the crucible to charge the crucible with the crystalline material. The pulling mechanism serves to pull a single-crystal from the molten material in the crucible. The feed pipe has a lower end positioned slightly above the surface of the molten material in the crucible and including a plurality of baffle plates mounted on an inner peripheral wall thereof in longitudinally spaced relation to one another. The baffle plates are arranged so that a pitch defined between adjacent two baffle plates decreases toward the lower end of the feed pipe.