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公开(公告)号：US07465946B2
公开(公告)日：2008-12-16
申请号：US11406216
申请日：2006-04-17
Applicant: Norbert R. Bowering , Oleh V. Khodykin , Alexander N. Bykanov , Igor V. Fomenkov
Inventor： Norbert R. Bowering , Oleh V. Khodykin , Alexander N. Bykanov , Igor V. Fomenkov
Abstract: An EUV light source is disclosed which may comprise at least one optical element having a surface, such as a multi-layer collector mirror; a laser source generating a laser beam; and a source material irradiated by the laser beam to form a plasma and emit EUV light. In one aspect, the source material may consist essentially of a tin compound and may generate tin debris by plasma formation which deposits on the optical element and, in addition, the tin compound may include an element that is effective in etching deposited tin from the optical element surface. Tin compounds may include SnBr4, SnBr2 and SnH4. In another aspect, an EUV light source may comprise a molten source material irradiated by a laser beam to form a plasma and emit EUV light, the source material comprising tin and at least one other metal, for example tin with Gallium and/or Indium.
Abstract translation: 公开了一种EUV光源，其可以包括具有表面的至少一个光学元件，例如多层收集镜; 产生激光束的激光源; 以及由激光束照射以形成等离子体并发射EUV光的源材料。 在一个方面，源材料可以基本上由锡化合物组成，并且可以通过沉积在光学元件上的等离子体形成而产生锡屑，此外，锡化合物可以包括有效地从光学蚀刻沉积的锡的元素 元素表面。 锡化合物可以包括SnBr4，SnBr2和SnH4。 另一方面，EUV光源可以包括由激光束照射以形成等离子体并发射EUV光的熔融源材料，源材料包含锡和至少一种其它金属，例如锡与镓和/或铟。
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公开(公告)号：US20100025600A1
公开(公告)日：2010-02-04
申请号：US12221313
申请日：2008-07-31
Applicant: Juan Armando Chavez , Norbert R. Bowering
Inventor： Juan Armando Chavez , Norbert R. Bowering
IPC: H05G2/00
CPC classification number: G03F7/70958 , G03F7/70825 , G03F7/70891 , G03F7/70925
Abstract: As disclosed herein, a device may comprise a substrate made of a material comprising silicon, the substrate having a first side and an opposed second side; an EUV reflective multi-layer coating overlaying at least a portion of the first side; an infrared absorbing coating overlaying at least a portion of the second side; and a system generating infrared radiation to heat the absorbing coating and the substrate.
Abstract translation: 如本文所公开的，装置可包括由包括硅的材料制成的衬底，该衬底具有第一侧和相对的第二侧; 覆盖第一侧的至少一部分的EUV反射多层涂层; 覆盖所述第二侧的至少一部分的红外吸收涂层; 以及产生红外辐射以加热吸收涂层和基底的系统。
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公开(公告)号：US07193228B2
公开(公告)日：2007-03-20
申请号：US11021261
申请日：2004-12-22
Applicant: Norbert R. Bowering , Alexander I. Ershov , Timothy S. Dyer , Hugh R. Grinolds
Inventor： Norbert R. Bowering , Alexander I. Ershov , Timothy S. Dyer , Hugh R. Grinolds
CPC classification number: G21K1/062 , B82Y10/00 , G03F7/70175 , G03F7/70916
Abstract: Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in plasma generated EUV light source chambers, particularly where the plasma source material is reactive with one or more of the MLM materials.
Abstract translation: 公开了用于形成等离子体产生的EUV光源光学元件的装置和方法，例如，包括使用各种二元层材料的MLM堆叠的反射器和包括用于等离子体产生的EUV光源室中的单个和二进制封盖层的封盖层，特别是在 等离子体源材料与一种或多种MLM材料反应。
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14.发明授权EUV light source components and methods for producing, using and refurbishing same 有权EUV光源组件及其制造，使用和翻新方法公开(公告)号：US07960701B2
公开(公告)日：2011-06-14
申请号：US12004871
申请日：2007-12-20
Applicant: Norbert R. Bowering , Oleh V. Khodykin
Inventor： Norbert R. Bowering , Oleh V. Khodykin
IPC: G01J1/42
CPC classification number: G02B5/0891 , B82Y10/00 , G01J1/429 , G03F7/70941 , G03F7/70958 , G03F7/70975 , G21K2201/061 , G21K2201/067 , H05G2/003 , H05G2/005 , H05G2/008
Abstract: A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps/acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps/acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.
Abstract translation: 公开了一种用于EUV反射镜的原位监测以确定光学降解程度的方法。 该方法可以包括用具有波长在EUV谱以外的波长的光照射反射镜的至少一部分的步骤/动作，在光已经从反射镜反射之后测量光的至少一部分，并且使用该测量和 镜面退化和光反射率之间的预定关系，以估计多层镜面退化的程度。 还公开了一种用于制备近似法线入射的EUV反射镜的方法，该反射镜可以包括提供金属基底的步骤/动作，转动基底的表面的金刚石，使用物理气相沉积沉积覆盖表面的至少一种中间材料 技术，并沉积覆盖中间材料的多层镜面涂层。
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公开(公告)号：US07476887B2
公开(公告)日：2009-01-13
申请号：US11725940
申请日：2007-03-19
Applicant: Norbert R. Bowering , Alexander I. Ershov , Timothy S. Dyer , Hugh R. Grinolds
Inventor： Norbert R. Bowering , Alexander I. Ershov , Timothy S. Dyer , Hugh R. Grinolds
Abstract: Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in plasma generated EUV light source chambers, particularly where the plasma source material is reactive with one or more of the MLM materials.
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Patent Agency Ranking
公开(公告)号：US07394083B2
公开(公告)日：2008-07-01
申请号：US11177501
申请日：2005-07-08
Applicant: Norbert R. Bowering , Jerzy R. Hoffman
Inventor： Norbert R. Bowering , Jerzy R. Hoffman
IPC: G01J1/42
CPC classification number: G03F7/7085 , B82Y10/00 , G21K2201/061
Abstract: Systems and methods for EUV Light Source metrology are disclosed. In a first aspect, a system for measuring an EUV light source power output may include a photoelectron source material disposed along an EUV light pathway to expose the material and generate a quantity of photoelectrons. The system may further include a detector for detecting the photoelectrons and producing an output indicative of EUV power. In another aspect, a system for measuring an EUV light intensity may include a multi-layer mirror, e.g., Mo/Si, disposable along an EUV light pathway to expose the mirror and generate a photocurrent in the mirror. A current monitor may be connected to the mirror to measure the photocurrent and produce an output indicative of EUV power. In yet another aspect, an off-line EUV metrology system may include an instrument for measuring a light characteristic and MoSi2/Si multi-layer mirror.
Abstract translation: 披露了EUV光源计量系统和方法。 在第一方面，用于测量EUV光源功率输出的系统可以包括沿着EUV光路设置的光电子源材料，以暴露材料并产生一定量的光电子。 该系统还可以包括用于检测光电子并产生指示EUV功率的输出的检测器。 在另一方面，用于测量EUV光强度的系统可以包括多层反射镜，例如Mo / Si，沿着EUV光路径可弃，以暴露反射镜并在反射镜中产生光电流。 电流监视器可以连接到反射镜以测量光电流并产生指示EUV功率的输出。 在另一方面，离线EUV测量系统可以包括用于测量光特性和MoSi 2 / Si多层反射镜的仪器。
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公开(公告)号：US07453077B2
公开(公告)日：2008-11-18
申请号：US11323397
申请日：2005-12-29
Applicant: Norbert R. Bowering , Bjorn A. M. Hansson , Rodney D. Simmons
Inventor： Norbert R. Bowering , Bjorn A. M. Hansson , Rodney D. Simmons
IPC: G21K5/04
Abstract: An EUV light source and method of operating same is disclosed which may comprise: an EUV plasma production chamber comprising a chamber wall comprising an exit opening for the passage of produced EUV light focused to a focus point; a first EUV exit sleeve comprising a terminal end comprising an opening facing the exit opening; a first exit sleeve chamber housing the first exit sleeve and having an EUV light exit opening; a gas supply mechanism supplying gas under a pressure higher than the pressure within the plasma production chamber to the first exit sleeve chamber. The first exit sleeve may be tapered toward the terminal end opening, and may, e.g., be conical in shape comprising a narrowed end at the terminal end.
Abstract translation: 公开了一种EUV光源及其操作方法，其可以包括：EUV等离子体生成室，其包括室壁，该室壁包括用于使产生的EUV光聚焦到聚焦点的通过的出口; 第一EUV出口套筒，其包括终端，所述终端包括面向所述出口的开口; 第一出口套筒室，其容纳所述第一出口套筒并具有EUV光出口; 气体供给机构，其在高于等离子体生成室内的压力的压力下向第一出口套筒室供给气体。 第一出口套筒可以朝向终端开口渐缩，并且可以例如是在终端处包括窄端的圆锥形形状。
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公开(公告)号：US08198612B2
公开(公告)日：2012-06-12
申请号：US12221313
申请日：2008-07-31
Applicant: Juan Armando Chavez , Norbert R. Bowering
Inventor： Juan Armando Chavez , Norbert R. Bowering
IPC: H01J35/20
CPC classification number: G03F7/70958 , G03F7/70825 , G03F7/70891 , G03F7/70925
Abstract: As disclosed herein, a device may comprise a substrate made of a material comprising silicon, the substrate having a first side and an opposed second side; an EUV reflective multi-layer coating overlaying at least a portion of the first side; an infrared absorbing coating overlaying at least a portion of the second side; and a system generating infrared radiation to heat the absorbing coating and the substrate.
Abstract translation: 如本文所公开的，装置可包括由包括硅的材料制成的衬底，该衬底具有第一侧和相对的第二侧; 覆盖所述第一侧的至少一部分的EUV反射多层涂层; 覆盖所述第二侧的至少一部分的红外吸收涂层; 以及产生红外辐射以加热吸收涂层和基底的系统。
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19.发明申请EUV LIGHT SOURCE COMPONENTS AND METHODS FOR PRODUCING, USING AND REFURBISHING SAME 有权EUV光源组件及其生产，使用和修复方法公开(公告)号：US20110192985A1
公开(公告)日：2011-08-11
申请号：US13091923
申请日：2011-04-21
Applicant: Norbert R. Bowering , Oleh V. Khodykin
Inventor： Norbert R. Bowering , Oleh V. Khodykin
CPC classification number: G02B5/0891 , B82Y10/00 , G01J1/429 , G03F7/70941 , G03F7/70958 , G03F7/70975 , G21K2201/061 , G21K2201/067 , H05G2/003 , H05G2/005 , H05G2/008
Abstract: A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps/acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps/acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.
Abstract translation: 公开了一种用于EUV反射镜的原位监测以确定光学降解程度的方法。 该方法可以包括用具有波长在EUV谱以外的波长的光照射反射镜的至少一部分的步骤/动作，在光已经从反射镜反射之后测量光的至少一部分，并且使用该测量和 镜面退化和光反射率之间的预定关系，以估计多层镜面退化的程度。 还公开了一种用于制备近似法线入射的EUV反射镜的方法，该反射镜可以包括提供金属基底的步骤/动作，转动基底的表面的金刚石，使用物理气相沉积沉积覆盖表面的至少一种中间材料 技术，并沉积覆盖中间材料的多层镜面涂层。
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公开(公告)号：US07843632B2
公开(公告)日：2010-11-30
申请号：US11505177
申请日：2006-08-16
Applicant: Norbert R. Bowering
Inventor： Norbert R. Bowering
CPC classification number: G03F7/7015 , G02B5/0891 , G02B7/182 , G21K1/062 , Y10T29/49982
Abstract: In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si3N4, B4C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions and a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5th period transition metal.
Abstract translation: 在第一方面，公开了一种制造EUV光源反射镜的方法，其可以包括提供多个离散基板的动作/步骤; 用相应的多层涂层涂覆每个基材; 将涂覆的基底固定在其中每个涂覆的基底被定向到公共焦点的布置中; 然后抛光至少一个多层涂层。 在另一方面，公开了一种用于EUV光的光学元件，其可以包括基底; 选自由Si，C，Si 3 N 4，B 4 C，SiC和Cr组成的材料组中的平滑层，使用高能沉积条件沉积的平滑层材料和多层介电涂层。 另一方面，用于EUV反射镜的耐腐蚀多层涂层可以包括交替的Si层和具有氮和第五段过渡金属的复合材料。
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