公开(公告)号：US08514486B2

公开(公告)日：2013-08-20

申请号：US12927012

申请日：2010-11-03

Applicant: Alexander I. Ershov ,  Igor V. Fomenkov ,  Norbert R. Bowering ,  Jerzy R. Hoffman

Inventor： Alexander I. Ershov ,  Igor V. Fomenkov ,  Norbert R. Bowering ,  Jerzy R. Hoffman

IPC: H01S3/00

CPC classification number: H01S3/105 ,  G03F7/70033 ,  H01S3/005 ,  H01S3/115 ,  H01S3/2232 ,  H01S3/225 ,  H01S3/2325 ,  H01S2301/02 ,  H05G2/003 ,  H05G2/008

Abstract: A device comprising a laser source producing a continuous output on a beam path and an amplifier is disclosed. The device further includes a partially transmissive, partially reflective optic disposed on said beam path between said laser source and said amplifier. The device further includes a droplet generator positioned to deliver a droplet moving on a path intersecting said beam path, the droplet reflecting light to establish an optical cavity with said optic.

Abstract translation: 公开了一种包括在光束路径上产生连续输出的激光源和放大器的装置。 该装置还包括设置在所述激光源和所述放大器之间的所述光束路径上的部分透射的部分反射光学元件。 该装置还包括液滴发生器，其定位成输送在与所述光束路径相交的路径上移动的液滴，液滴反射光以与所述光学器件建立光学腔。

公开(公告)号：US20110075253A1

公开(公告)日：2011-03-31

申请号：US12927063

申请日：2010-11-05

Applicant: Norbert R. Bowering ,  Igor V. Fomenkov

Inventor： Norbert R. Bowering ,  Igor V. Fomenkov

IPC: G02B7/185 ,  G02B7/198 ,  B23P17/04 ,  B05D5/06

CPC classification number: G03F7/7015 ,  G02B5/0891 ,  G02B7/182 ,  G21K1/062 ,  Y10T29/49982

Abstract: In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si3N4, B4C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions and a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5th period transition metal.

Abstract translation: 在第一方面，公开了一种制造EUV光源反射镜的方法，其可以包括提供多个离散基板的动作/步骤; 用相应的多层涂层涂覆每个基材; 将涂覆的基底固定在其中每个涂覆的基底被定向到公共焦点的布置中; 然后抛光至少一个多层涂层。 在另一方面，公开了一种用于EUV光的光学元件，其可以包括基底; 选自由Si，C，Si 3 N 4，B 4 C，SiC和Cr组成的材料组中的平滑层，使用高能沉积条件沉积的平滑层材料和多层介电涂层。 另一方面，用于EUV反射镜的耐腐蚀多层涂层可以包括交替的Si层和具有氮和第五段过渡金属的复合材料。

公开(公告)号：US07872245B2

公开(公告)日：2011-01-18

申请号：US12214736

申请日：2008-06-19

Applicant: Georgiy O. Vaschenko ,  Alexander N. Bykanov ,  Norbert R. Bowering ,  David C. Brandt ,  Alexander I. Ershov ,  Rodney D. Simmons ,  Oleh V. Khodykin ,  Igor V. Fomenkov

Inventor： Georgiy O. Vaschenko ,  Alexander N. Bykanov ,  Norbert R. Bowering ,  David C. Brandt ,  Alexander I. Ershov ,  Rodney D. Simmons ,  Oleh V. Khodykin ,  Igor V. Fomenkov

IPC: A61N5/00 ,  G21G5/00

CPC classification number: H05G2/003 ,  H05G2/006 ,  H05G2/008

Abstract: Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.

Abstract translation: 本文公开的装置可以包括具有限定旋转轴线和圆形周边的旋转表面的EUV反射光学元件。 光学元件可以被定位成相对于水平面以非零角度倾斜轴，并且在水平面中建立周边的垂直投影，其中周边突起界定水平面中的一个区域。 该装置还可以包括传送目标材料的系统，该系统具有位于水平面内的区域外的外围突起的边界材料释放点和产生用于照射目标材料产生的激光束的系统 EUV排放。

公开(公告)号：US20100025600A1

公开(公告)日：2010-02-04

申请号：US12221313

申请日：2008-07-31

Applicant: Juan Armando Chavez ,  Norbert R. Bowering

Inventor： Juan Armando Chavez ,  Norbert R. Bowering

IPC: H05G2/00

CPC classification number: G03F7/70958 ,  G03F7/70825 ,  G03F7/70891 ,  G03F7/70925

Abstract: As disclosed herein, a device may comprise a substrate made of a material comprising silicon, the substrate having a first side and an opposed second side; an EUV reflective multi-layer coating overlaying at least a portion of the first side; an infrared absorbing coating overlaying at least a portion of the second side; and a system generating infrared radiation to heat the absorbing coating and the substrate.

Abstract translation: 如本文所公开的，装置可包括由包括硅的材料制成的衬底，该衬底具有第一侧和相对的第二侧; 覆盖第一侧的至少一部分的EUV反射多层涂层; 覆盖所述第二侧的至少一部分的红外吸收涂层; 以及产生红外辐射以加热吸收涂层和基底的系统。

公开(公告)号：US07193228B2

公开(公告)日：2007-03-20

申请号：US11021261

申请日：2004-12-22

Applicant: Norbert R. Bowering ,  Alexander I. Ershov ,  Timothy S. Dyer ,  Hugh R. Grinolds

Inventor： Norbert R. Bowering ,  Alexander I. Ershov ,  Timothy S. Dyer ,  Hugh R. Grinolds

IPC: G01J1/00 ,  G02B1/00

CPC classification number: G21K1/062 ,  B82Y10/00 ,  G03F7/70175 ,  G03F7/70916

Abstract: Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in plasma generated EUV light source chambers, particularly where the plasma source material is reactive with one or more of the MLM materials.

Abstract translation: 公开了用于形成等离子体产生的EUV光源光学元件的装置和方法，例如，包括使用各种二元层材料的MLM堆叠的反射器和包括用于等离子体产生的EUV光源室中的单个和二进制封盖层的封盖层，特别是在 等离子体源材料与一种或多种MLM材料反应。

公开(公告)号：US20110058588A1

公开(公告)日：2011-03-10

申请号：US12927012

申请日：2010-11-03

Applicant: Alexander I. Ershov ,  Igor V. Fomenkov ,  Norbert R. Bowering ,  Jerzy R. Hoffman

Inventor： Alexander I. Ershov ,  Igor V. Fomenkov ,  Norbert R. Bowering ,  Jerzy R. Hoffman

IPC: H01S3/22 ,  H01S3/00

CPC classification number: H01S3/105 ,  G03F7/70033 ,  H01S3/005 ,  H01S3/115 ,  H01S3/2232 ,  H01S3/225 ,  H01S3/2325 ,  H01S2301/02 ,  H05G2/003 ,  H05G2/008

Abstract: A device is described herein which may comprise an oscillator having an oscillator cavity length, L0, and defining an oscillator path; and a multi-pass optical amplifier coupled with the oscillator to establish a combined optical cavity including the oscillator path, the combined cavity having a length, Lcombined, where Lcombined=(N+x)*L0, where “N” is an integer and “x” is a number between 0.4 and 0.6.

Abstract translation: 本文描述了一种器件，其可以包括具有振荡器腔长度L0并且限定振荡器路径的振荡器; 和与所述振荡器耦合的多通光放大器以建立包括所述振荡器路径的组合光腔，所述组合腔具有长度L组合，其中L组合=（N + x）* L0，其中“N”是整数， “x”是介于0.4和0.6之间的数字。

公开(公告)号：US07453077B2

公开(公告)日：2008-11-18

申请号：US11323397

申请日：2005-12-29

Applicant: Norbert R. Bowering ,  Bjorn A. M. Hansson ,  Rodney D. Simmons

Inventor： Norbert R. Bowering ,  Bjorn A. M. Hansson ,  Rodney D. Simmons

IPC: G21K5/04

CPC classification number: H05G2/003 ,  H05G2/006

Abstract: An EUV light source and method of operating same is disclosed which may comprise: an EUV plasma production chamber comprising a chamber wall comprising an exit opening for the passage of produced EUV light focused to a focus point; a first EUV exit sleeve comprising a terminal end comprising an opening facing the exit opening; a first exit sleeve chamber housing the first exit sleeve and having an EUV light exit opening; a gas supply mechanism supplying gas under a pressure higher than the pressure within the plasma production chamber to the first exit sleeve chamber. The first exit sleeve may be tapered toward the terminal end opening, and may, e.g., be conical in shape comprising a narrowed end at the terminal end.

Abstract translation: 公开了一种EUV光源及其操作方法，其可以包括：EUV等离子体生成室，其包括室壁，该室壁包括用于使产生的EUV光聚焦到聚焦点的通过的出口; 第一EUV出口套筒，其包括终端，所述终端包括面向所述出口的开口; 第一出口套筒室，其容纳所述第一出口套筒并具有EUV光出口; 气体供给机构，其在高于等离子体生成室内的压力的压力下向第一出口套筒室供给气体。 第一出口套筒可以朝向终端开口渐缩，并且可以例如是在终端处包括窄端的圆锥形形状。

公开(公告)号：US07368741B2

公开(公告)日：2008-05-06

申请号：US11107535

申请日：2005-04-14

Applicant: Stephan T. Melnychuk ,  William N. Partlo ,  Igor V. Fomenkov ,  I. Roger Oliver ,  Richard M. Ness ,  Norbert R. Bowering ,  Oleh Khodykin ,  Curtis L. Rettig ,  Gerry M. Blumenstock ,  Timothy S. Dyer ,  Rodney D. Simmons ,  Jerzy R. Hoffman ,  R. Mark Johnson

Inventor： Stephan T. Melnychuk ,  William N. Partlo ,  Igor V. Fomenkov ,  I. Roger Oliver ,  Richard M. Ness ,  Norbert R. Bowering ,  Oleh Khodykin ,  Curtis L. Rettig ,  Gerry M. Blumenstock ,  Timothy S. Dyer ,  Rodney D. Simmons ,  Jerzy R. Hoffman ,  R. Mark Johnson

IPC: H01J35/20

CPC classification number: H05G2/003 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70166 ,  G03F7/70175 ,  G03F7/70916 ,  H01S3/005 ,  H05G2/005 ,  H05G2/008 ,  H05H1/06

Abstract: The present invention provides a reliable, high-repetition rate, production line compatible high energy photon source. A very hot plasma containing an active material is produced in vacuum chamber. The active material is an atomic element having an emission line within a desired extreme ultraviolet (EUV) range. A pulse power source comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer, provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts. In preferred embodiments designed by Applicants in-band, EUV light energy at the intermediate focus is 45 Watts extendable to 105.8 Watts.

Abstract translation: 本发明提供了一种可靠，高重复率的生产线兼容高能光子源。 在真空室中产生含有活性物质的非常热的等离子体。 活性物质是具有期望的极紫外（EUV）范围内的发射线的原子元素。 包括充电电容器和包括脉冲变压器的磁压缩电路的脉冲电源提供电脉冲，其具有足够的能量和电势，足以以超过5瓦的速率在中间焦点处产生EUV光。 在由申请人带内设计的优选实施例中，中间焦点处的EUV光能量可以45瓦可扩展到105.8瓦特。

公开(公告)号：US20080043321A1

公开(公告)日：2008-02-21

申请号：US11505177

申请日：2006-08-16

Applicant: Norbert R. Bowering ,  Igor V. Fomenkov

Inventor： Norbert R. Bowering ,  Igor V. Fomenkov

IPC: G02B5/08

CPC classification number: G03F7/7015 ,  G02B5/0891 ,  G02B7/182 ,  G21K1/062 ,  Y10T29/49982

Abstract: In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si3N4, B4C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions and a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5th period transition metal.

Abstract translation: 在第一方面，公开了一种制造EUV光源反射镜的方法，其可以包括提供多个离散基板的动作/步骤; 用相应的多层涂层涂覆每个基材; 将涂覆的基底固定在其中每个涂覆的基底被定向到公共焦点的布置中; 然后抛光至少一个多层涂层。 在另一方面，公开了一种用于EUV光的光学元件，其可以包括基底; 选自由Si，C，Si 3 N 4，B 4 C，SiC和Cr组成的材料组中的平滑层， 使用高能沉积条件沉积的平滑层材料和多层介电涂层。 另一方面，用于EUV反射镜的耐腐蚀多层涂层可以包括交替的Si层和具有氮和第五阶段过渡金属的复合材料。

公开(公告)号：US08598549B2

公开(公告)日：2013-12-03

申请号：US12927063

申请日：2010-11-05

Applicant: Norbert R. Bowering ,  Igor V. Fomenkov

Inventor： Norbert R. Bowering ,  Igor V. Fomenkov

IPC: H05G2/00

CPC classification number: G03F7/7015 ,  G02B5/0891 ,  G02B7/182 ,  G21K1/062 ,  Y10T29/49982

Abstract: In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si3N4, B4C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions and a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5th period transition metal.

Abstract translation: 在第一方面，公开了一种制造EUV光源反射镜的方法，其可以包括提供多个离散基板的动作/步骤; 用相应的多层涂层涂覆每个基材; 将涂覆的基底固定在其中每个涂覆的基底被定向到公共焦点的布置中; 然后抛光至少一个多层涂层。 在另一方面，公开了一种用于EUV光的光学元件，其可以包括基底; 选自由Si，C，Si 3 N 4，B 4 C，SiC和Cr组成的材料组中的平滑层，使用高能沉积条件沉积的平滑层材料和多层介电涂层。 另一方面，用于EUV反射镜的耐腐蚀多层涂层可以包括交替的Si层和具有氮和第五段过渡金属的复合材料。