公开(公告)号：US20080266715A1

公开(公告)日：2008-10-30

申请号：US11799296

申请日：2007-04-30

申请人： Charanjit S. Bhatia ,  Eric W. Flint ,  Cherngye Hwang ,  Eduardo Torres Mireles ,  Yongjian Sun ,  Jila Tabib ,  Nobuto Yasui

发明人： Charanjit S. Bhatia ,  Eric W. Flint ,  Cherngye Hwang ,  Eduardo Torres Mireles ,  Yongjian Sun ,  Jila Tabib ,  Nobuto Yasui

IPC分类号： G11B17/32

CPC分类号： G11B17/32 ,  G11B5/3106 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/40 ,  G11B5/6005

摘要： A hard disk drive slider comprises an overcoat layer, which covers an air-bearing surface of the slider. The overcoat covers an exposed surface of a tunneling magnetoresistance transducer. An adhesion layer is coupled with the overcoat layer and the air-bearing surface. The adhesion layer comprises a compound of nitrogen. The compound of nitrogen reduces noise in read data from the tunneling magnetoresistance transducer.

摘要翻译： 硬盘驱动器滑块包括覆盖滑块的空气轴承表面的外涂层。 外涂层覆盖了隧道磁阻换能器的暴露表面。 粘合层与外涂层和空气轴承表面结合。 粘合层包括氮化合物。 氮化合物可以减少来自隧道磁阻换能器的读数据中的噪声。

公开(公告)号：US20110058279A1

公开(公告)日：2011-03-10

申请号：US12533463

申请日：2009-07-31

申请人： Eric FLINT ,  Joel Forrest ,  Yiping Hsiao ,  Yongjian Sun ,  Qi-Fan Xiao

发明人： Eric FLINT ,  Joel Forrest ,  Yiping Hsiao ,  Yongjian Sun ,  Qi-Fan Xiao

IPC分类号： G11B5/60 ,  C04B35/593 ,  C23C14/32 ,  C23C14/06

CPC分类号： G11B5/255 ,  G11B5/40 ,  G11B5/6005

摘要： A slider for an information storage system. The slider comprising a single overcoat layer, wherein the layer is deposited onto an ABS of the slider by a filtered cathodic arc process, the layer having a Si/C ratio less than about 10% and a thickness of less than about 15 Å.

摘要翻译： 用于信息存储系统的滑块。 滑块包括单个外涂层，其中该层通过经过滤的阴极电弧工艺沉积到滑块的ABS上，该层具有小于约10％的Si / C比和小于约的厚度。

公开(公告)号：US08338313B2

公开(公告)日：2012-12-25

申请号：US12865728

申请日：2009-04-21

申请人： Guoyi Zhang ,  Yongjian Sun ,  Xiangning Kang ,  Zhizhong Chen ,  Zhijian Yang ,  Xinrong Yang

发明人： Guoyi Zhang ,  Yongjian Sun ,  Xiangning Kang ,  Zhizhong Chen ,  Zhijian Yang ,  Xinrong Yang

IPC分类号： H01L21/31

CPC分类号： H01L33/0079 ,  B23K26/40 ,  B23K2103/50 ,  C30B25/18 ,  C30B29/406 ,  C30B33/06

摘要： A method for nondestructive laser lift-off of GaN from sapphire substrates is disclosed. A solid-state laser is used as the laser source. A small laser-spot having a perimeter length of 3 to 1000 micrometers and a distance of two farthest corners or a longest diameter of no more than 400 micrometers is used for laser scanning point-by-point and line-by-line. The energy at the center of the laser-spot is the strongest and is gradually reduced toward the periphery. A nondestructive laser lift-off with a small laser-spot is achieved. The scanning mode of the laser lift-off is improved. Device lift-off can be achieved without the need of aiming. As a result, the laser lift-off process is simplified, and the efficiency is improved while the rejection rate is reduced. The obstacles of the industrialization of the laser lift-off process are removed.

摘要翻译： 公开了一种用于蓝宝石衬底的GaN非破坏性激光剥离的方法。 固体激光器用作激光源。 使用周边长度为3〜1000微米，距离最远的两个角或最大直径不大于400微米的小型激光点，用于逐点和逐行的激光扫描。 激光中心的能量最强，逐渐减少到周边。 实现了具有小型激光点的非破坏性激光剥离。 激光剥离的扫描模式得到改善。 可以实现设备剥离，无需瞄准。 结果，简化了激光剥离工艺，并且在抑制率降低的同时提高了效率。 消除了激光剥离工艺的工业化障碍。

公开(公告)号：US20100133157A1

公开(公告)日：2010-06-03

申请号：US12697744

申请日：2010-02-01

申请人： Yongjian Sun ,  Yan Wang

发明人： Yongjian Sun ,  Yan Wang

IPC分类号： E02B15/04 ,  C02F1/00

CPC分类号： C02F1/00 ,  C02F3/06 ,  C02F3/103 ,  C02F3/106 ,  C02F3/107 ,  C02F3/1284 ,  C02F2103/007 ,  C02F2201/009 ,  C02F2209/40 ,  C02F2303/02 ,  Y02A20/212 ,  Y02W10/15 ,  Y02W10/37

摘要： A water treatment apparatus includes a first fluid channel that can circulate contaminated water in the water body, a first inlet that draws the contaminated water into the first fluid channel, and an outlet that allows the contaminated water to exit the first fluid channel. A second fluid channel installed with a filter therein can filter contaminated water in the water body to produce a filtered water flow. A fluid transport apparatus can draw the contaminated water through the first fluid channel and the second fluid channel. A flow control system allows water to flow in a predetermined angular range while blocking at least a portion of the remaining angular range in at least one of the first inlet and the outlet to achieve mixing coverage with different aspect ratio. The position of the outlet can be adjusted to optimize the flow rate and pattern.

摘要翻译： 水处理装置包括可以使水体中的污染水循环的第一流体通道，将污染水吸入第一流体通道的第一入口和允许污染的水离开第一流体通道的出口。 安装有过滤器的第二流体通道可以过滤水体中的污染水以产生过滤的水流。 流体输送装置可以通过第一流体通道和第二流体通道吸收被污染的水。 流量控制系统允许水以预定的角度范围流动，同时阻挡在第一入口和出口中的至少一个中的剩余角度范围的至少一部分，以实现具有不同纵横比的混合覆盖。 出口的位置可以进行调整，以优化流速和图案。

公开(公告)号：US20080037167A1

公开(公告)日：2008-02-14

申请号：US11502070

申请日：2006-08-09

申请人： Eric W. Flint ,  Chemgye Hwang ,  Ning Shi ,  Yongjian Sun

发明人： Eric W. Flint ,  Chemgye Hwang ,  Ning Shi ,  Yongjian Sun

IPC分类号： G11B5/187

CPC分类号： G11B5/1871 ,  Y10T29/49021 ,  Y10T29/49032

摘要： Embodiments of the present invention pertain to forming a head with reduced pole tip recession. According to one embodiment, a pole tip element is formed from a platinum containing material. During diamond like carbon (DLC) processing, hydrogen and hydrogen containing compounds are removed from a vacuum plasma processing environment that contains the head so that an amount of material that is removed from the pole tip element and other non-platinum containing elements associated with the head are approximately the same.

摘要翻译： 本发明的实施例涉及形成具有减小的极尖衰退的头部。 根据一个实施例，极尖元件由含铂材料形成。 在类金刚石（DLC）加工过程中，从含有磁头的真空等离子体处理环境中除去含氢和氢的化合物，使得从磁极末端元件除去的材料量和与其相关的其它非铂元素 头大致相同。

公开(公告)号：US20140357053A1

公开(公告)日：2014-12-04

申请号：US14373310

申请日：2012-05-22

申请人： Yongjian Sun ,  Guoyi Zhang ,  Yuzhen Tong

发明人： Yongjian Sun ,  Guoyi Zhang ,  Yuzhen Tong

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  C30B29/406 ,  C30B33/06 ,  H01L21/187 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/405 ,  H01L2933/0083

摘要： A method for preparing a composite substrate for GaN growth includes: growing a GaN monocrystal epitaxial layer on a sapphire substrate, bonding the GaN epitaxial layer onto a temporary substrate, lifting off the sapphire substrate, bonding the GaN epitaxial layer on the temporary substrate with a thermally and electrically conducting substrate, shedding the temporary substrate, and obtaining the composite substrate in which the GaN layer having a surface of gallium polarity is bonded to the conducting substrate. If the GaN layer on the sapphire substrate is directly bonded to the conducting substrate, after the sapphire substrate is lifted off, a composite substrate in which a GaN epitaxial layer having a surface of nitrogen polarity is bonded to the conducting substrate. The disclosed composite substrates have homoepitaxy and improved crystal quality; they can be used for forming LED and other devices at greatly reduces costs.

摘要翻译： 制备用于GaN生长的复合衬底的方法包括：在蓝宝石衬底上生长GaN单晶外延层，将GaN外延层接合到临时衬底上，提起蓝宝石衬底，将GaN外延层与临时衬底结合 导热基板，脱模临时基板，得到具有镓极性表面的GaN层与导体基板接合的复合基板。 如果将蓝宝石衬底上的GaN层直接接合到导电衬底上，则在蓝宝石衬底被剥离之后，将具有氮极性表面的GaN外延层接合到导电衬底的复合衬底。 所公开的复合衬底具有同质外延和改善的晶体质量; 它们可以用于形成LED等设备，大大降低成本。

公开(公告)号：US08216456B2

公开(公告)日：2012-07-10

申请号：US12697744

申请日：2010-02-01

申请人： Yongjian Sun ,  Yan Wang

发明人： Yongjian Sun ,  Yan Wang

IPC分类号： B01D35/05 ,  C02F7/00

CPC分类号： C02F1/00 ,  C02F3/06 ,  C02F3/103 ,  C02F3/106 ,  C02F3/107 ,  C02F3/1284 ,  C02F2103/007 ,  C02F2201/009 ,  C02F2209/40 ,  C02F2303/02 ,  Y02A20/212 ,  Y02W10/15 ,  Y02W10/37

摘要： A water treatment apparatus includes a first fluid channel that can circulate contaminated water in the water body, a first inlet that draws the contaminated water into the first fluid channel, and an outlet that allows the contaminated water to exit the first fluid channel. A second fluid channel installed with a filter therein can filter contaminated water in the water body to produce a filtered water flow. A fluid transport apparatus can draw the contaminated water through the first fluid channel and the second fluid channel. A flow control system allows water to flow in a predetermined angular range while blocking at least a portion of the remaining angular range in at least one of the first inlet and the outlet to achieve mixing coverage with different aspect ratio. The position of the outlet can be adjusted to optimize the flow rate and pattern.

摘要翻译： 水处理装置包括可以使水体中的污染水循环的第一流体通道，将污染水吸入第一流体通道的第一入口和允许污染的水离开第一流体通道的出口。 安装有过滤器的第二流体通道可以过滤水体中的污染水以产生过滤的水流。 流体输送装置可以通过第一流体通道和第二流体通道吸收被污染的水。 流量控制系统允许水以预定的角度范围流动，同时阻挡在第一入口和出口中的至少一个中的剩余角度范围的至少一部分，以实现具有不同纵横比的混合覆盖。 出口的位置可以进行调整，以优化流速和图案。

公开(公告)号：US07678266B2

公开(公告)日：2010-03-16

申请号：US12047906

申请日：2008-03-13

申请人： Yongjian Sun ,  Yan Wang

发明人： Yongjian Sun ,  Yan Wang

IPC分类号： B01D35/05 ,  C02F7/00

CPC分类号： C02F7/00 ,  B01F3/0478 ,  C02F1/001 ,  C02F1/283 ,  C02F2101/105 ,  C02F2101/16 ,  C02F2101/163 ,  C02F2201/009 ,  C02F2303/02 ,  Y02A20/212 ,  Y02W10/15 ,  Y02W10/37

摘要： A water treatment apparatus includes a float configured to float on the surface of a water body, a first fluid channel coupled to the float and configured to circulate contaminated water in the water body, and a second fluid channel coupled to the float and configured to filter contaminated water in the water body. A fluid transport apparatus can draw the contaminated water through the first fluid channel at a first flow rate and through the second fluid channel at a second flow rate.

摘要翻译： 一种水处理设备，包括：浮子，其构造成浮在水体的表面上，第一流体通道，其耦合到浮子并且构造成使水体中的污染水循环;以及第二流体通道，其耦合到浮子并被配置为过滤 污水在水体中。 流体输送装置可以以第一流量将污染的水通过第一流体通道并以第二流量通过第二流体通道。

公开(公告)号：US20060198044A1

公开(公告)日：2006-09-07

申请号：US11070530

申请日：2005-03-01

申请人： Pei Chen ,  Omar Montero Camacho ,  Laurence Samuelson ,  Yongjian Sun

发明人： Pei Chen ,  Omar Montero Camacho ,  Laurence Samuelson ,  Yongjian Sun

IPC分类号： G11B17/00

CPC分类号： G11B5/3169 ,  G11B5/102 ,  G11B5/6005 ,  Y10T29/49041 ,  Y10T29/49046

摘要： A method for increasing etch depth uniformity in ion milling process in a wafer manufacturing process encompasses loading designated regions of a production pallet with carriers containing wafers to be ion milled. These designated regions have been predetermined to exhibit similar and preferred depths of etching. Non-designated regions of the production pallet are then loaded with dummy carriers and the wafers are ion milled.

摘要翻译： 在晶片制造过程中用于增加离子研磨过程中的蚀刻深度均匀性的方法包括将生产托盘的指定区域加载到载体上以包含待离子研磨的晶片。 已经预定了这些指定区域以表现相似且优选的蚀刻深度。 然后将生产托盘的非指定区域装载虚拟载体，并且将晶片进行离子研磨。

公开(公告)号：US20110201191A1

公开(公告)日：2011-08-18

申请号：US12865728

申请日：2009-04-21

申请人： Guoyi Zhang ,  Yongjian Sun ,  Xiangning Kang ,  Zhizhong Chen ,  Zhijian Yang ,  Xinrong Yang

发明人： Guoyi Zhang ,  Yongjian Sun ,  Xiangning Kang ,  Zhizhong Chen ,  Zhijian Yang ,  Xinrong Yang

IPC分类号： H01L21/268 ,  H01L21/3205

CPC分类号： H01L33/0079 ,  B23K26/40 ,  B23K2103/50 ,  C30B25/18 ,  C30B29/406 ,  C30B33/06

摘要： A method for nondestructive laser lift-off of GaN from sapphire substrates utilizing a solid-state laser is disclosed in the present invention, wherein, a solid-state laser is used as the laser source, and a small laser-spot with a circumference of 3 to 1000 micrometers and a distance of two farthest corners or a longest diameter of no more than 400 micrometers is used for laser scanning point-by-point and line-by-line, wherein the energy in the small laser-spot is distributed such that the energy in the center of the laser-spot is the strongest and is gradually reduced toward the periphery. According to the present invention, a nondestructive laser lift-off with a small laser-spot is achieved, and a scanning mode of the laser lift-off is improved, thereby a lift-off method without the need of aiming is achieved. As a result, the laser lift-off process is simplified, and the efficiency is improved while the rejection rate is reduced, such that the obstacles of the industrialization of the laser lift-off process are removed.

摘要翻译： 在本发明中公开了一种使用固态激光器的蓝宝石衬底的非破坏性激光剥离GaN的方法，其中使用固态激光器作为激光源，并且具有周长为 使用3〜1000微米的距离和两个最远的角落或最长直径不超过400微米的距离用于逐点和逐行的激光扫描，其中小激光点中的能量分布如下 激光中心的能量最强，逐渐减少到周边。 根据本发明，实现了具有小激光点的非破坏性激光剥离，并且提高了激光剥离的扫描模式，从而实现了不需要瞄准的剥离方法。 结果，简化了激光剥离处理，并且在抑制率降低的同时提高了效率，从而消除了激光剥离工艺的工业化的障碍。