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公开(公告)号:US20240371737A1
公开(公告)日:2024-11-07
申请号:US18310425
申请日:2023-05-01
Applicant: QUALCOMM Incorporated
Inventor: Hong Bok WE , Joan Rey Villarba BUOT , Michelle Yejin KIM , Kuiwon KANG
IPC: H01L23/498 , H01L21/48 , H01L23/00
Abstract: In an aspect, an electronic device is disclosed that includes a substrate comprising a core having an upper planar surface and a lower planar surface, wherein the core includes a cavity extending through the core; an electronic component at least partially disposed in the cavity, wherein the electronic component has an upper planar surface having one or more electronic component terminals; a first cured resin layer, wherein the upper planar surface of the electronic component is at least partially embedded in the first cured resin layer at least at an upper portion of the cavity; and an upper metallization structure disposed over the upper planar surface of the core, wherein the upper metallization structure is configured to provide one or more conductive paths from the one or more electronic component terminals to one or more upper metal terminals of the upper metallization structure.
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公开(公告)号:US20240105568A1
公开(公告)日:2024-03-28
申请号:US17951601
申请日:2022-09-23
Applicant: QUALCOMM Incorporated
Inventor: Joan Rey Villarba BUOT , Hong Bok WE , Michelle Yejin KIM , Aniket PATIL
IPC: H01L23/498 , H01L21/48 , H01L23/00 , H01L25/16
CPC classification number: H01L23/49822 , H01L21/4857 , H01L21/486 , H01L23/49816 , H01L23/49838 , H01L23/49894 , H01L24/16 , H01L25/16 , H01L2224/16227 , H01L2924/19041 , H01L2924/19042
Abstract: A package comprising a substrate and an integrated device coupled to the substrate. The substrate includes a first dielectric layer, a second dielectric layer, a third dielectric layer, and a plurality of interconnects located in the first dielectric layer, the second dielectric layer and the third dielectric layer. The second dielectric layer is located between the first dielectric layer and the third dielectric layer. The second dielectric layer includes a different material than the first dielectric layer and the third dielectric layer.
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