InGaN diode-laser pumped II-VI semiconductor lasers
    16.
    发明授权
    InGaN diode-laser pumped II-VI semiconductor lasers 有权
    InGaN二极管激光泵浦II-VI半导体激光器

    公开(公告)号:US07136408B2

    公开(公告)日:2006-11-14

    申请号:US10866907

    申请日:2004-06-14

    Abstract: A semiconductor laser includes a multilayer semiconductor laser heterostructure including at least one active layer of a II-VI semiconductor material and is optically pumped by one or more indium gallium nitride (InGaN) diode-lasers. Group II elements in the II-VI semiconductor material are zinc, cadmium, magnesium, beryllium, strontium, and barium. Group VI elements in the II-VI semiconductor material are Sulfur, Selenium, and Tellurium. In one example of the laser an edge emitting heterostructure includes two active layers of zinc cadmium selenide, two waveguide layers of zinc magnesium sulfoselenide, and two cladding layers, also of zinc magnesium sulfoselenide. Proportions of elements in the cladding layer material and the waveguide layer material are selected such that the waveguide layer material has a higher bandgap than the material of the waveguide layers. In another example, a two dimensional array of InGaN diode-lasers is arranged to optically pump a one dimensional array of II-VI edge-emitting heterostructure lasers.

    Abstract translation: 半导体激光器包括包含至少一个II-VI半导体材料的有源层的多层半导体激光异质结构,并被一个或多个铟镓氮(InGaN)二极管激光器光泵浦。 II-VI族半导体材料中的II族元素是锌,镉,镁,铍,锶和钡。 II-VI族半导体材料中的VI族元素是硫,硒和碲。 在激光器的一个实例中,边缘发射异质结构包括两个硒化锌镉活性层,两个磺酸锌镁纳米波导层和两个包层,也是锌硫酸镁镁。 选择包层材料和波导层材料中的元素的比例使得波导层材料具有比波导层的材料更高的带隙。 在另一个示例中,布置InGaN二极管激光器的二维阵列以光学泵浦II-VI边缘发射异质结构激光器的一维阵列。

    Group-delay-dispersive multilayer-mirror structures and method for designing same
    17.
    发明授权
    Group-delay-dispersive multilayer-mirror structures and method for designing same 有权
    群延迟分散多层镜结构及其设计方法

    公开(公告)号:US06222673B1

    公开(公告)日:2001-04-24

    申请号:US09135972

    申请日:1998-08-18

    CPC classification number: G02B5/0883 G02B5/0858

    Abstract: Negative Group-delay-dispersion mirror (NGDD-mirror) multilayer structures include a generally-orderly arrangement of layers or groups of layers in which the function of certain individual layers or groups of layers can be recognized and defined. The structures are broadly definable as a rear group of layers which are primarily responsible for providing a desired reflection level and reflection bandwidth together with a low and smoothly varying reflection phase-dispersion, and a front group of layers which are primarily responsible for producing high reflection phase-dispersion necessary for providing a desired NGDD level and bandwidth. The front group of layers relies on multiple resonant trapping mechanisms such as two or more effective resonant-cavities, employing one or more sub-quarter-wave layers to shape the phase-dispersion for providing a substantially-constant NGDD. In certain embodiments of the structures, a base layer or substrate of a highly-reflective metal can be used to reduce the number of dielectric layers needed to provide high reflectivity.

    Abstract translation: 负组延迟分散反射镜(NGDD-mirror)多层结构包括层或层组的一般有序布置,其中可以识别和限定某些单个层或多组层的功能。 这些结构可以广泛地定义为后面的层组,其主要负责提供期望的反射水平和反射带宽以及低和平滑变化的反射相位分散以及主要负责产生高反射的前面的层组 提供所需的NGDD级别和带宽所需的相位色散。 前组的层依赖于多个谐振捕获机构,例如两个或更多个有效的谐振腔,采用一个或多个亚四分之一波长的层来形成相位分散以提供基本上恒定的NGDD。 在结构的某些实施例中,可以使用高反射金属的基底层或衬底来减少提供高反射率所需的电介质层的数量。

    Visible-spectrum anti-reflection coating including
electrically-conductive metal oxide layers
    19.
    发明授权
    Visible-spectrum anti-reflection coating including electrically-conductive metal oxide layers 失效
    可见光抗反射涂层,包括导电金属氧化物层

    公开(公告)号:US5362552A

    公开(公告)日:1994-11-08

    申请号:US126128

    申请日:1993-09-23

    Inventor: R. Russel Austin

    Abstract: A six-layer anti-reflection coating (20 and 20A) includes three layers (24, 28, and 34) which may be formed from an electrically-conductive metal oxide having a refractive index between about 1.9 and 2.1 at a wavelength of 520 nanometers. Up to a total optical thickness of about one-wavelength of visible light of the electrically-conductive metal oxide may be included in the coating, while still providing less than 0.25 percent photopic reflection.

    Abstract translation: 六层抗反射涂层(20和20A)包括三层(24,28和34),其可以由波长520纳米的折射率介于约1.9和2.1之间的导电金属氧化物形成 。 直到导电金属氧化物的可见光的约一波长的总光学厚度可以包括在涂层中,同时仍然提供小于0.25%的明视反射。

    Broad band pass filter including metal layers and dielectric layers of
alternating refractive index
    20.
    发明授权
    Broad band pass filter including metal layers and dielectric layers of alternating refractive index 失效
    宽带通滤波器,包括金属层和交替折射率的电介质层

    公开(公告)号:US5337191A

    公开(公告)日:1994-08-09

    申请号:US46232

    申请日:1993-04-13

    Inventor: R. Russel Austin

    Abstract: A visible light transmitting, near-infrared reflecting filter for a substrate, comprises a central group of layers (26) including two metal layers (32 and 36) separated by a spacer-layer (34) and bounded by admittance-matching layers (32 and 38). The spacer-layer has an optical thickness of less than one-half wavelength of visible light and the admittance-matching layers have an optical thickness of less than one-quarter wavelength of visible light. On each side of the central group is a group of layers (24 and 28) for boosting near infrared reflectivity of the filter, and for providing low reflection and high transmission for visible light. Each of these near-infrared-reflection-boosting groups including a high refractive index layer (40 and 42) and at least one low refractive index layer (46 and 48). The high index layer has an optical thickness of about one-quarter wavelength at a near-infrared wavelength, and the low refractive index layer has a refractive index of less than one-quarter wavelength at the near-infrared wavelength.

    Abstract translation: 一种用于衬底的可见光透射的近红外反射滤光器,包括一组中心层(26),包括由间隔层(34)分隔并由导纳匹配层(32)限定的两个金属层(32和36) 和38)。 间隔层的光学厚度小于可见光的一半波长,并且导纳匹配层的光学厚度小于四分之一波长的可见光。 在中央组的每一侧是一组用于增强滤光器的近红外反射率的层(24和28),并且用于为可见光提供低反射和高透射率。 这些近红外反射增强组中的每一个包括高折射率层(40和42)和至少一个低折射率层(46和48)。 高折射率层在近红外波长处具有大约四分之一波长的光学厚度,并且低折射率层在近红外波长处具有小于四分之一波长的折射率。

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