Abstract:
A semiconductor gain-structure functions as a gain-element in a laser-resonator. The gain-structure is bonded to a diamond heat-spreader that is peripherally cooled by a heat-sink configured to allow access to the gain-structure by laser-radiation circulating in the laser-resonator. In one example, the gain-structure is used as a transmissive gain-structure in a traveling-wave ring-resonator. In another example, the gain-structure surmounts mirror-structure which functions as an end-mirror of a standing-wave laser-resonator.
Abstract:
RF power is transmitted to a CO2 gas discharge laser form a source of RF power via a series combination of transmission line sections. The lengths and characteristic impedances of the transmission line sections are selected to transform the impedance of the RF power source to the operating impedance of the laser.
Abstract:
RF power is transmitted to a CO2 gas discharge laser form a source of RF power via a series combination of transmission line sections. The lengths and characteristic impedances of the transmission line sections are selected to transform the impedance of the RF power source to the operating impedance of the laser.
Abstract:
Fundamental-wavelength pulses from a fiber a laser are divided into two portions and the two portions are separately amplified. One of the amplified fundamental-wavelength pulse-portions is frequency-doubled. The frequency doubled portion is sum-frequency mixed with the other amplified fundamental wavelength pulse-portions to provide third-harmonic radiation pulses.
Abstract:
An in vivo screening assay for identifying an agent that interferes with T cell activation and/or -differentiation and/or modulation of other inflammatory effector cells.
Abstract:
A semiconductor laser includes a multilayer semiconductor laser heterostructure including at least one active layer of a II-VI semiconductor material and is optically pumped by one or more indium gallium nitride (InGaN) diode-lasers. Group II elements in the II-VI semiconductor material are zinc, cadmium, magnesium, beryllium, strontium, and barium. Group VI elements in the II-VI semiconductor material are Sulfur, Selenium, and Tellurium. In one example of the laser an edge emitting heterostructure includes two active layers of zinc cadmium selenide, two waveguide layers of zinc magnesium sulfoselenide, and two cladding layers, also of zinc magnesium sulfoselenide. Proportions of elements in the cladding layer material and the waveguide layer material are selected such that the waveguide layer material has a higher bandgap than the material of the waveguide layers. In another example, a two dimensional array of InGaN diode-lasers is arranged to optically pump a one dimensional array of II-VI edge-emitting heterostructure lasers.
Abstract:
Negative Group-delay-dispersion mirror (NGDD-mirror) multilayer structures include a generally-orderly arrangement of layers or groups of layers in which the function of certain individual layers or groups of layers can be recognized and defined. The structures are broadly definable as a rear group of layers which are primarily responsible for providing a desired reflection level and reflection bandwidth together with a low and smoothly varying reflection phase-dispersion, and a front group of layers which are primarily responsible for producing high reflection phase-dispersion necessary for providing a desired NGDD level and bandwidth. The front group of layers relies on multiple resonant trapping mechanisms such as two or more effective resonant-cavities, employing one or more sub-quarter-wave layers to shape the phase-dispersion for providing a substantially-constant NGDD. In certain embodiments of the structures, a base layer or substrate of a highly-reflective metal can be used to reduce the number of dielectric layers needed to provide high reflectivity.
Abstract:
A coated substrate is covered with a barrier or base coating having spaced apart transparent electrodes deposited thereon. The base coating and electrodes are arranged such that the electrodes and the base coating together and the base coating alone have at least matching photopic reflectivity in a selected liquid, and preferably have matching spectral response in the selected liquid, over a wavelength range between about 470 and 650 nm.
Abstract:
A six-layer anti-reflection coating (20 and 20A) includes three layers (24, 28, and 34) which may be formed from an electrically-conductive metal oxide having a refractive index between about 1.9 and 2.1 at a wavelength of 520 nanometers. Up to a total optical thickness of about one-wavelength of visible light of the electrically-conductive metal oxide may be included in the coating, while still providing less than 0.25 percent photopic reflection.
Abstract:
A visible light transmitting, near-infrared reflecting filter for a substrate, comprises a central group of layers (26) including two metal layers (32 and 36) separated by a spacer-layer (34) and bounded by admittance-matching layers (32 and 38). The spacer-layer has an optical thickness of less than one-half wavelength of visible light and the admittance-matching layers have an optical thickness of less than one-quarter wavelength of visible light. On each side of the central group is a group of layers (24 and 28) for boosting near infrared reflectivity of the filter, and for providing low reflection and high transmission for visible light. Each of these near-infrared-reflection-boosting groups including a high refractive index layer (40 and 42) and at least one low refractive index layer (46 and 48). The high index layer has an optical thickness of about one-quarter wavelength at a near-infrared wavelength, and the low refractive index layer has a refractive index of less than one-quarter wavelength at the near-infrared wavelength.