Methods and apparatuses for addressing memory caches

    公开(公告)号:US10853261B2

    公开(公告)日:2020-12-01

    申请号:US16157908

    申请日:2018-10-11

    Applicant: Rambus Inc.

    Abstract: A cache memory includes cache lines to store information. The stored information is associated with physical addresses that include first, second, and third distinct portions. The cache lines are indexed by the second portions of respective physical addresses associated with the stored information. The cache memory also includes one or more tables, each of which includes respective table entries that are indexed by the first portions of the respective physical addresses. The respective table entries in each of the one or more tables are to store indications of the second portions of respective physical addresses associated with the stored information.

    Methods and apparatuses for addressing memory caches

    公开(公告)号:US12222871B2

    公开(公告)日:2025-02-11

    申请号:US18592424

    申请日:2024-02-29

    Applicant: Rambus Inc.

    Abstract: A cache memory includes cache lines to store information. The stored information is associated with physical addresses that include first, second, and third distinct portions. The cache lines are indexed by the second portions of respective physical addresses associated with the stored information. The cache memory also includes one or more tables, each of which includes respective table entries that are indexed by the first portions of the respective physical addresses. The respective table entries in each of the one or more tables are to store indications of the second portions of respective physical addresses associated with the stored information.

    Methods and Apparatuses for Addressing Memory Caches

    公开(公告)号:US20190179768A1

    公开(公告)日:2019-06-13

    申请号:US16157908

    申请日:2018-10-11

    Applicant: Rambus Inc.

    Abstract: A cache memory includes cache lines to store information. The stored information is associated with physical addresses that include first, second, and third distinct portions. The cache lines are indexed by the second portions of respective physical addresses associated with the stored information. The cache memory also includes one or more tables, each of which includes respective table entries that are indexed by the first portions of the respective physical addresses. The respective table entries in each of the one or more tables are to store indications of the second portions of respective physical addresses associated with the stored information.

    WEAR LEVELING IN A MEMORY SYSTEM
    17.
    发明申请
    WEAR LEVELING IN A MEMORY SYSTEM 有权
    在记忆体系中磨损

    公开(公告)号:US20170010964A1

    公开(公告)日:2017-01-12

    申请号:US15207175

    申请日:2016-07-11

    Applicant: Rambus Inc.

    Abstract: Embodiments are disclosed for replacing one or more pages of a memory to level wear on the memory. In one embodiment, a system includes a page fault handling function and a memory address mapping function. Upon receipt of a page fault, the page fault handling function maps an evicted virtual memory address to a stressed page and maps a stressed virtual memory address to a free page using the memory address mapping function.

    Abstract translation: 公开了用于替换存储器的一页或多页的级别磨损的实施例。 在一个实施例中,系统包括页面故障处理功能和存储器地址映射功能。 页面错误处理功能在收到页面错误时,将被驱逐的虚拟内存地址映射到应力页面,并使用存储器地址映射功能将压缩的虚拟内存地址映射到空闲页面。

    Remapping Memory Cells Based on Future Endurance Measurements
    18.
    发明申请
    Remapping Memory Cells Based on Future Endurance Measurements 有权
    基于未来耐久性测量重新映射记忆单元

    公开(公告)号:US20140115296A1

    公开(公告)日:2014-04-24

    申请号:US14058081

    申请日:2013-10-18

    Applicant: Rambus Inc.

    Abstract: A method of operating a memory device that includes groups of memory cells is presented. The groups include a first group of memory cells. Each one of the groups has a respective physical address and is initially associated with a respective logical address. The device also includes an additional group of memory cells that has a physical address but is not initially associated with a logical address. In the method, a difference in the future endurance between the first group of memory cells and the additional group of memory cells is identified. When the difference in the future endurance between the first group and the additional group exceeds a predetermined threshold difference, the association between the first group and the logical address initially associated with the first group is ended and the additional group is associated with the logical address that was initially associated with the first group.

    Abstract translation: 提出了一种操作包括存储器单元组的存储器件的方法。 这些组包括第一组记忆单元。 组中的每一个具有相应的物理地址,并且最初与相应的逻辑地址相关联。 该设备还包括具有物理地址但不是最初与逻辑地址相关联的附加组的存储器单元。 在该方法中,识别第一组存储器单元和附加的存储单元组之间的未来耐久性的差异。 当第一组和附加组之间的未来耐久性的差异超过预定阈值差时,第一组与最初与第一组相关联的逻辑地址之间的关联结束,并且附加组与逻辑地址相关联, 最初与第一组有关。

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