公开(公告)号：US10355161B2

公开(公告)日：2019-07-16

申请号：US15703525

申请日：2017-09-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Teruhiro Kuwajima ,  Shinichi Watanuki ,  Futoshi Komatsu ,  Tomoo Nakayama

IPC: H01L31/18 ,  H01L31/028 ,  H01L31/105 ,  H01L31/0224

Abstract: To achieve a high-reliability germanium photoreceiver. A photoreceiver portion of a germanium photoreceiver comprised of a p type silicon core layer, an i type germanium layer, and an n type silicon layer is covered with a second insulating film and from a coupling hole formed in the second insulating film, a portion of the upper surface of the photoreceiver portion is exposed. The coupling hole has, on the inner wall thereof, a barrier metal film and the barrier metal film has thereon a first-layer wiring made of a tungsten film. Tungsten hardly diffuses from the tungsten film into the i type germanium layer even when a thermal stress is applied, making it possible to prevent the resulting germanium photoreceiver from having diode characteristics deteriorated by the thermal stress.

公开(公告)号：US10290577B2

公开(公告)日：2019-05-14

申请号：US16009429

申请日：2018-06-15

Applicant: Renesas Electronics Corporation

Inventor： Teruhiro Kuwajima ,  Akira Matsumoto ,  Yasutaka Nakashiba ,  Takashi Iwadare

IPC: H01L23/495 ,  H01L23/522

Abstract: A SOP has a semiconductor chip. The chip includes a pair of a lower layer coil and an upper layer coil laminated through an interlayer insulating film formed therebetween, a first circuit unit electrically coupled to the upper layer coil, and a plurality of electrode pads. Further, it has a wire for electrically coupling the upper layer coil and the first circuit unit, a plurality of inner leads and outer leads arranged around the semiconductor chip, a plurality of wires for electrically coupling the electrode pads of the semiconductor chip and the inner leads, and a resin made sealing member for covering the semiconductor chip. The wire extends along the extending direction of the wires.