公开(公告)号：US10211352B2

公开(公告)日：2019-02-19

申请号：US15797230

申请日：2017-10-30

Applicant: Renesas Electronics Corporation

Inventor： Shinichi Watanuki ,  Futoshi Komatsu ,  Tomoo Nakayama ,  Takashi Ogura ,  Teruhiro Kuwajima

IPC: H01L31/028 ,  H01L31/02 ,  H01L31/0232

Abstract: Germanium (Ge) contamination to a semiconductor manufacturing apparatus is suppressed. Germanium is a dissimilar material in a silicon semiconductor process. A semiconductor device is provided with a Ge photodiode including an n-type germanium layer, and a plug capacitively coupled to the n-type germanium layer. In other words, the n-type germanium layer of the Ge photodiode and the plug are not in direct contact with each other but are capacitively coupled to each other.

公开(公告)号：US10818813B2

公开(公告)日：2020-10-27

申请号：US16188985

申请日：2018-11-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tomoo Nakayama ,  Shinichi Watanuki ,  Futoshi Komatsu ,  Teruhiro Kuwajima ,  Takashi Ogura ,  Hiroyuki Okuaki ,  Shigeaki Shimizu

IPC: H01L31/105 ,  H01L31/18 ,  G02B6/136 ,  G02B6/122 ,  H01L31/0224 ,  G02B6/12

Abstract: In order to improve the performance of a semiconductor device, a semiconductor layer EP is formed over a p-type semiconductor PR. An n-type semiconductor layer NR1 is formed over the semiconductor layer EP. The semiconductor layer PR, the semiconductor layer EP, and the semiconductor layer NR1 respectively configure part of a photoreceiver. A cap layer of a material different from that of the semiconductor layer EP is formed over the semiconductor layer EP, and a silicide layer, which is a reaction product of a metal and the material included in the cap layer, is formed within the cap layer. A plug having a barrier metal film BM1 is formed over the cap layer through the silicide layer. Here, a reaction product of the metal and the material included in the semiconductor layer NR1 is not formed within the semiconductor layer NR1.

公开(公告)号：US10553734B2

公开(公告)日：2020-02-04

申请号：US15980661

申请日：2018-05-15

Applicant: Renesas Electronics Corporation

Inventor： Teruhiro Kuwajima ,  Shinichi Watanuki ,  Futoshi Komatsu ,  Tomoo Nakayama

IPC: H01L31/02 ,  H01L31/028 ,  H01L31/18 ,  H01L23/48 ,  H01L23/522 ,  H01L31/024 ,  H01L31/0232 ,  H01L31/0352 ,  H01L27/12 ,  G02B6/122 ,  G02F1/025 ,  G02B6/43

Abstract: An improvement is achieved in the reliability of a semiconductor device. Over an insulating layer, an optical waveguide and a p-type semiconductor portion are formed. Over the p-type semiconductor portion, a multi-layer body including an n-type semiconductor portion and a cap layer is formed. Over a first interlayer insulating film covering the optical waveguide, the p-type semiconductor portion, and the multi-layer body, a heater located over the optical waveguide is formed. In the first interlayer insulating film, first and second contact holes are formed. A first contact portion electrically coupled with the p-type semiconductor portion is formed continuously in the first contact hole and over the first interlayer insulating film. A second contact portion electrically coupled with the cap layer is formed continuously in the second contact hole and over the first interlayer insulating film. A wire formed over a second interlayer insulating film is electrically coupled with the heater and the first and second contact portions via plugs embedded in the second interlayer insulating film.

公开(公告)号：US10355161B2

公开(公告)日：2019-07-16

申请号：US15703525

申请日：2017-09-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Teruhiro Kuwajima ,  Shinichi Watanuki ,  Futoshi Komatsu ,  Tomoo Nakayama

IPC: H01L31/18 ,  H01L31/028 ,  H01L31/105 ,  H01L31/0224

Abstract: To achieve a high-reliability germanium photoreceiver. A photoreceiver portion of a germanium photoreceiver comprised of a p type silicon core layer, an i type germanium layer, and an n type silicon layer is covered with a second insulating film and from a coupling hole formed in the second insulating film, a portion of the upper surface of the photoreceiver portion is exposed. The coupling hole has, on the inner wall thereof, a barrier metal film and the barrier metal film has thereon a first-layer wiring made of a tungsten film. Tungsten hardly diffuses from the tungsten film into the i type germanium layer even when a thermal stress is applied, making it possible to prevent the resulting germanium photoreceiver from having diode characteristics deteriorated by the thermal stress.