公开(公告)号：US10211352B2

公开(公告)日：2019-02-19

申请号：US15797230

申请日：2017-10-30

Applicant: Renesas Electronics Corporation

Inventor： Shinichi Watanuki ,  Futoshi Komatsu ,  Tomoo Nakayama ,  Takashi Ogura ,  Teruhiro Kuwajima

IPC: H01L31/028 ,  H01L31/02 ,  H01L31/0232

Abstract: Germanium (Ge) contamination to a semiconductor manufacturing apparatus is suppressed. Germanium is a dissimilar material in a silicon semiconductor process. A semiconductor device is provided with a Ge photodiode including an n-type germanium layer, and a plug capacitively coupled to the n-type germanium layer. In other words, the n-type germanium layer of the Ge photodiode and the plug are not in direct contact with each other but are capacitively coupled to each other.

公开(公告)号：US10084078B2

公开(公告)日：2018-09-25

申请号：US15361303

申请日：2016-11-25

Applicant: Renesas Electronics Corporation

Inventor： Tomoo Nakayama ,  Hiroshi Kawaguchi

IPC: H01L29/15 ,  H01L29/778 ,  H01L29/423 ,  H01L29/66 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L29/7788 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

Abstract: In a semiconductor device using a nitride semiconductor, a MISFET is prevented from having deteriorated controllability which will otherwise occur when a tungsten film, which configures a gate electrode of the MISFET, has a tensile stress. A gate electrode of a MISFET having an AlGN/GaN heterojunction is formed from a tungsten film having grains with a relatively small grain size and having no tensile stress. The grain size of the grains of the tungsten film is smaller than that of the grains of a barrier metal film configuring the gate electrode and formed below the tungsten film.

公开(公告)号：US10818813B2

公开(公告)日：2020-10-27

申请号：US16188985

申请日：2018-11-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tomoo Nakayama ,  Shinichi Watanuki ,  Futoshi Komatsu ,  Teruhiro Kuwajima ,  Takashi Ogura ,  Hiroyuki Okuaki ,  Shigeaki Shimizu

IPC: H01L31/105 ,  H01L31/18 ,  G02B6/136 ,  G02B6/122 ,  H01L31/0224 ,  G02B6/12

Abstract: In order to improve the performance of a semiconductor device, a semiconductor layer EP is formed over a p-type semiconductor PR. An n-type semiconductor layer NR1 is formed over the semiconductor layer EP. The semiconductor layer PR, the semiconductor layer EP, and the semiconductor layer NR1 respectively configure part of a photoreceiver. A cap layer of a material different from that of the semiconductor layer EP is formed over the semiconductor layer EP, and a silicide layer, which is a reaction product of a metal and the material included in the cap layer, is formed within the cap layer. A plug having a barrier metal film BM1 is formed over the cap layer through the silicide layer. Here, a reaction product of the metal and the material included in the semiconductor layer NR1 is not formed within the semiconductor layer NR1.

公开(公告)号：US10553734B2

公开(公告)日：2020-02-04

申请号：US15980661

申请日：2018-05-15

Applicant: Renesas Electronics Corporation

Inventor： Teruhiro Kuwajima ,  Shinichi Watanuki ,  Futoshi Komatsu ,  Tomoo Nakayama

IPC: H01L31/02 ,  H01L31/028 ,  H01L31/18 ,  H01L23/48 ,  H01L23/522 ,  H01L31/024 ,  H01L31/0232 ,  H01L31/0352 ,  H01L27/12 ,  G02B6/122 ,  G02F1/025 ,  G02B6/43

Abstract: An improvement is achieved in the reliability of a semiconductor device. Over an insulating layer, an optical waveguide and a p-type semiconductor portion are formed. Over the p-type semiconductor portion, a multi-layer body including an n-type semiconductor portion and a cap layer is formed. Over a first interlayer insulating film covering the optical waveguide, the p-type semiconductor portion, and the multi-layer body, a heater located over the optical waveguide is formed. In the first interlayer insulating film, first and second contact holes are formed. A first contact portion electrically coupled with the p-type semiconductor portion is formed continuously in the first contact hole and over the first interlayer insulating film. A second contact portion electrically coupled with the cap layer is formed continuously in the second contact hole and over the first interlayer insulating film. A wire formed over a second interlayer insulating film is electrically coupled with the heater and the first and second contact portions via plugs embedded in the second interlayer insulating film.

公开(公告)号：US10355161B2

公开(公告)日：2019-07-16

申请号：US15703525

申请日：2017-09-13

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Teruhiro Kuwajima ,  Shinichi Watanuki ,  Futoshi Komatsu ,  Tomoo Nakayama

IPC: H01L31/18 ,  H01L31/028 ,  H01L31/105 ,  H01L31/0224

Abstract: To achieve a high-reliability germanium photoreceiver. A photoreceiver portion of a germanium photoreceiver comprised of a p type silicon core layer, an i type germanium layer, and an n type silicon layer is covered with a second insulating film and from a coupling hole formed in the second insulating film, a portion of the upper surface of the photoreceiver portion is exposed. The coupling hole has, on the inner wall thereof, a barrier metal film and the barrier metal film has thereon a first-layer wiring made of a tungsten film. Tungsten hardly diffuses from the tungsten film into the i type germanium layer even when a thermal stress is applied, making it possible to prevent the resulting germanium photoreceiver from having diode characteristics deteriorated by the thermal stress.

公开(公告)号：US11262500B2

公开(公告)日：2022-03-01

申请号：US16700580

申请日：2019-12-02

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Tetsuya Iida ,  Yasutaka Nakashiba ,  Seigo Namioka ,  Tomoo Nakayama

IPC: G02B6/122 ,  G02B6/13 ,  G02F1/025 ,  G02B6/12

Abstract: A semiconductor device includes a semiconductor substrate having a first surface, a second surface opposite to the first surface, and having a first recess portion formed on the first surface, a first cladding layer located in the first recess portion, and a first optical waveguide formed on the first cladding layer. The first optical waveguide overlaps with the first cladding layer in plan view.

公开(公告)号：US10714330B2

公开(公告)日：2020-07-14

申请号：US15934710

申请日：2018-03-23

Applicant: Renesas Electronics Corporation

Inventor： Tomoo Nakayama ,  Tatsuya Usami

IPC: H01L21/3205 ,  H01L29/76 ,  H01L29/94 ,  H01L21/02 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/265 ,  H01L21/266 ,  H01L21/8238

Abstract: The reliability of a semiconductor device is improved. A photoresist pattern is formed over a semiconductor substrate. Then, over the semiconductor substrate, a protective film is formed in such a manner as to cover the photoresist pattern. Then, with the photoresist pattern covered with the protective film, an impurity is ion implanted into the semiconductor substrate. Thereafter, the protective film is removed by wet etching, and then, the photoresist pattern is removed.

公开(公告)号：US10121927B2

公开(公告)日：2018-11-06

申请号：US15656212

申请日：2017-07-21

Applicant: Renesas Electronics Corporation

Inventor： Tomoo Nakayama

IPC: H01L31/105 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/18

Abstract: A provided semiconductor device includes a Ge photodiode having proper diode characteristics. A groove is provided on a germanium growth protective film, a p-type silicon layer, and a first insulating film from the top surface of the germanium growth protective film without reaching the major surface of a semiconductor substrate. An i-type germanium layer and an n-type germanium layer are embedded in the groove with a seed layer interposed between the layers and the groove, the seed layer being made of amorphous silicon, polysilicon, or silicon germanium. The i-type germanium layer and the n-type germanium layer do not protrude from the top surface of the germanium growth protective film, thereby forming a flat second insulating film having a substantially even thickness on the n-type germanium layer and the germanium growth protective film.

公开(公告)号：US09589954B2

公开(公告)日：2017-03-07

申请号：US14818516

申请日：2015-08-05

Applicant: Renesas Electronics Corporation

Inventor： Akira Mitsuiki ,  Tomoo Nakayama ,  Shigeaki Shimizu ,  Hiroyuki Okuaki

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/762 ,  H01L21/32 ,  H01L21/311 ,  H01L29/417 ,  H01L29/423 ,  H01L29/06 ,  H01L21/8234

CPC classification number: H01L27/088 ,  H01L21/3083 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76232 ,  H01L21/823418 ,  H01L21/823456 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/78 ,  H01L29/7833 ,  H01L29/7835

Abstract: Electric-field concentration in the vicinity of a recess is suppressed. A gate insulating film is provided on a substrate that has a drain region and a first recess therein. The first recess is located between the gate insulating film and the drain region, and is filled with an insulating film. The insulating film has a second recess on its side close to the gate insulating film. An angle defined by an inner side face of the first recess and the surface of the substrate is rounded on a side of the drain region close to the gate insulating film.

Abstract translation: 抑制了凹部附近的电场集中。 栅极绝缘膜设置在其上具有漏极区域和第一凹部的衬底上。 第一凹部位于栅极绝缘膜和漏极区之间，并且填充有绝缘膜。 绝缘膜在靠近栅极绝缘膜的一侧具有第二凹部。 由第一凹部的内侧面和基板的表面限定的角度在靠近栅极绝缘膜的漏极区域的一侧为圆形。