摘要:
A storage cell design evaluation circuit including a wordline timing and cell access detection circuit provides accurate information about state changes in static storage cells. A storage cell test row includes the access detection circuit, which provides the same loading during an access operation as the other cells in the array. The access detection circuit provides an output that may be probed without affecting the timing, read stability or writeability of the cell. The test row can test the clock and/or address timing of the row and may include a separate power supply rail for the row wordline driver, so that variation of access timing, read stability and writeability with wordline strength/access voltage can be determined. Multiple test rows may be cascaded among columns to provide a long delay line or ring oscillator for improved measurement resolution.
摘要:
Methods and arrangements to configure power management systems for integrated circuits are provided herein. A group of IC components that are functionally distinct or have mutually exclusive and/or quasi-mutually exclusive, (ME/QME) operating patterns (i.e. alternate or partially overlapping duty cycles) can be powered with a single power cell. An integrated circuit design tool can identified components in an integrated circuit design that have the ME/QME operating patterns. These cells can be collocated in close proximity to each other and power management system components can be placed in this area such that a multiple signal processing cells can share a single power line and a single power cell. Such a configuration can greatly reduce the size of a power management system for an integrated circuit.
摘要:
A method for evaluating memory cell performance provides for circuit delay and performance measurements in an actual memory circuit environment. A row in a memory array is enabled along with a set of drive devices that couple each bitline pair to the next in complement fashion to form a cascade of memory cells. The drive devices can be inverters and the inverters can be sized to simulate the bitline read pre-charge device and the write state-forcing device so that the cascade operates under the same loading/drive conditions as the operational with memory cell read/write circuits. The last and first bitline in the row can be cascaded, providing a ring oscillator or the delay of the cascade can be measured in response to a transition introduced at the head of the cascade. Weak read and/or weak write conditions can be measured by selective loading.
摘要:
Methods and arrangements to configure power management systems for integrated circuits are provided herein. A group of IC components that are functionally distinct or have mutually exclusive and/or quasi-mutually exclusive, (ME/QME) operating patterns (i.e. alternate or partially overlapping duty cycles) can be powered with a single power cell. An integrated circuit design tool can identified components in an integrated circuit design that have the ME/QME operating patterns. These cells can be collocated in close proximity to each other and power management system components can be placed in this area such that a multiple signal processing cells can share a single power line and a single power cell. Such a configuration can greatly reduce the size of a power management system for an integrated circuit.
摘要:
Methods and arrangements to configure power management systems for integrated circuits are provided herein. A group of IC components that are functionally distinct or have mutually exclusive and/or quasi-mutually exclusive, (ME/QME) operating patterns (i.e. alternate or partially overlapping duty cycles) can be powered with a single power cell. An integrated circuit design tool can identified components in an integrated circuit design that have the ME/QME operating patterns. These cells can be collocated in close proximity to each other and power management system components can be placed in this area such that a multiple signal processing cells can share a single power line and a single power cell. Such a configuration can greatly reduce the size of a power management system for an integrated circuit.
摘要:
A cascaded test circuit with inter-bitline drive devices for evaluating memory cell performance provides for circuit delay and performance measurements in an actual memory circuit environment. A row in a memory array is enabled along with a set of drive devices that couple each bitline pair to the next in complement fashion to form a cascade of memory cells. The drive devices can be inverters and the inverters can be sized to simulate the bitline read pre-charge device and the write state-forcing device so that the cascade operates under the same loading/drive conditions as the operational with memory cell read/write circuits. The last and first bitline in the row can be cascaded, providing a ring oscillator or the delay of the cascade can be measured in response to a transition introduced at the head of the cascade. Weak read and/or weak write conditions can be measured by selective loading.
摘要:
A low power consumption pipeline circuit architecture has power partitioned pipeline stages. The first pipeline stage is non-power-gated for fast response in processing input data after receipt of a valid data signal. A power-gated second pipeline stage has two power-gated modes. Normally the power rail in the power-gated second pipeline stage is charged to a first voltage potential of a pipeline power supply. In the first power gated mode, the power rail is charged to a threshold voltage below the first voltage potential to reduce leakage. In the second power gated mode, the power rail is decoupled from the first voltage potential. A power-gated third pipeline stage has its power rail either coupled to the first voltage potential or power-gated where its power rail is decoupled from the first voltage potential. The power rail of the second power-gated pipeline stage charges to the first voltage potential before the third power-gated pipeline stage.
摘要:
A delay circuit has a fixed delay path at a lower voltage level, a level converter, and an adjustable delay path at a higher voltage level. The fixed delay path includes an inverter chain, and the adjustable delay path includes serially-connected delay elements selectively connected to the circuit output. In an application for a local clock buffer of a static, random-access memory (SRAM), the lower voltage level is that of the local clock buffer, and the higher voltage level is that of the SRAM. These voltages may vary in response to dynamic voltage scaling, requiring re-calibration of the adjustable delay path. The adjustable delay path may be calibrated by progressively increasing the read access time of the SRAM array until a contemporaneous read operation returns the correct output, or by using a replica SRAM path to simulate variations in delay with changes in voltage supply.
摘要:
A distributed charge pump system uses a delay element and frequency dividers to generate out of phase pump clock signals that drive different charge pumps, to offset peak current clock edges for each charge pump and thereby reduce overall peak power. Clock signal division and phase offset may be extended to multiple levels for further smoothing of the pump clock signal transitions. A dual frequency divider may be used which receives the clock signal and its complement, and generates two divided signals that are 90° out of phase. In an illustrative embodiment the clock generator comprises a variable-frequency clock source, and a voltage regulator senses an output voltage of the charge pumps, generates a reference voltage based on a currently selected frequency of the variable-frequency clock source, and temporarily disables the charge pumps (by turning off local pump clocks) when the output voltage is greater than the reference voltage.
摘要:
A switched-capacitor charge pump comprises a two-phase charging circuit, cross-coupled transistors connected to output nodes of the switched capacitors, and a pump output connected to source terminals of the cross-coupled transistors. The charge pump has side transistors for boosting charge transfer, and gating logic of the side transistors includes level shifters which control connections to the pump output or a reference voltage. Negative and positive charge pump embodiments are provided. The charging circuit advantageously utilizes non-overlapping wide and narrow clock signals to generate multiple gating signals. The pump clock circuit preferably provides independent, programmable adjustment of the widths of the wide and narrow clock signals. An override mode can be provided using clamping circuits which shunt the pump output to the second nodes of the switched capacitors.