Abstract:
An integrated circuit digital processor is coupled to either a main program memory or a secondary program memory, wherein the secondary program memory may be low power, high reliability, non-volatile and/or fast memory that may store a limited number of critical program instructions and data for execution by the digital processor. A program memory switch may couple the digital processor to either the main program memory or the secondary program memory. This is particularly advantageous in that the secondary program memory may have attributes not economically feasible with the main program memory. A program memory controller may handle the selection of which of these memories that the digital processor is using to obtain its program instructions, and necessary control signals for switching and operation thereof.
Abstract:
A remote keyless entry (RKE) transponder has a programmable selective wake-up filter for determining whether the RKE transponder should wake-up to process a received signal. The wake-up filter correlates the timing of an input signal's carrier amplitude on and off time periods to a predefined programmable time period profile for a desired signal which has a certain carrier on time (time period on) and a certain carrier off time (time period off) arranged into a coded “header.” When a received signal matches the predefined time period profile, then the RKE transponder will wake-up to process the incoming signal data. The predefined time period profile may be programmable and may be stored in a header configuration register. Each RKE transponder has unique predefined time period on and time period off profiles.
Abstract:
An ESD-protection structure is located substantially under an integrated circuit bond pad. This ESD-protection structure is formed as a low capacitance structure by inserting a forward diode between the bond pad and the ESD clamp circuit. Placing the ESD-protection structure under the bond pad eliminates parasitic substrate capacitance and utilizes a parasitic PNP transistor formed from the inserted forward biased diode. The ESD-protection structure comprises adjacent alternating P+ and N+ diffusions located substantially under a bond pad to be ESD protected. The P+ diffusions are connected to the bond pad metal with metal vias through an insulating layer located between the bond pad and the P+ and N+ diffusions. The N+ diffusions are adjacent to the P+ diffusions. An N+ diffusion surrounds the N+ and P+ diffusions, and ties together the N+ diffusions so as to form a continuous N+ diffusion completely around each of the P+ diffusions. An N− well is located substantially under the N+ and P+ diffusions. The surrounding N+ diffusion partially overlaps the edge of the N− well below it. An outer portion of the N+ diffusion, the portion overlapping the N− well, is within a P− well. The P− well may be the substrate of the integrated circuit. Another N+ diffusion encircles the N+ diffusion surrounding the P+ diffusions. The another N+ diffusion is in the P− well and a field oxide may be located between the N+ diffusion and the another N+ diffusion. An NPN field transistor is formed with the N+ diffusion being the transistor collector, the P− well being the transistor base and the another N+ diffusion being the emitter. The another N+ diffusion (emitter) may be connected to ground by a conductive connection, e.g., metal or low resistance semiconductor material.
Abstract:
A method for monitoring a semiconductor fabrication process creates a wafer of semiconductor chips. Each chip has a one or more diodes. Each diode is addressable as part of an array, corresponds to a physical location of the chip, and is connected in series to a stack. The stack is composed of one ore more vertical interconnects and metal contacts. The diode and associated stack of vertical interconnects is addressed, and the current through each of the stacks of vertical interconnects in an array is measured.
Abstract:
A microcontroller apparatus is provided with an instruction set for manipulating the behavior of the microcontroller. The apparatus and system is provided that enables a linearized address space that makes modular emulation possible. Direct or indirect addressing is possible through register files or data memory. Special function registers, including the Program Counter (PC) and Working Register (W), are mapped in the data memory. An orthogonal (symmetrical) instruction set makes possible any operation on any register using any addressing mode. Consequently, two file registers to be used to some two operand instructions. This allows data to be moved directly between two registers without going through the W register. Thus, increasing performance and decreasing program memory usage.
Abstract:
A high voltage ESD-protection structure is used to protect delicate transistor circuits connected to an input or output of an integrated circuit bond pad from destructive high voltage ESD events by conducting at a controlled breakdown voltage that is less than a voltage that may cause destructive breakdown of the input and/or output circuits. The ESD-protection structure is able to absorb high current from these ESD events without snapback that would compromise operation of the higher voltage inputs and/or outputs of the integrated circuit. The ESD-protection structure will conduct when an ESD event occurs at a voltage above a controlled breakdown voltage of an electronic device, e.g., diode, in the ESD protection structure. Conduction of current from an ESD event having a voltage above the electronic device controlled breakdown voltage may be through another electronic device, e.g., transistor, having high current conduction capabilities, in the ESD-protection structure that may be controlled (triggered) by the device (e.g., diode) determining the controlled breakdown voltage (at which the ESD voltage is clamped to a desired value). The high voltage ESD-protection structure may be located substantially under the bond pad and may also include a low capacitance forward diode structure between the bond pad and the ESD clamp circuit.
Abstract:
A remote keyless entry (RKE) transponder has a programmable selective wake-up filter for determining whether the RKE transponder should wake-up to process a received signal. The wake-up filter correlates the timing of an input signal's carrier amplitude on and off time periods to a predefined programmable time period profile for a desired signal which has a certain carrier on time (time period on) and a certain carrier off time (time period off) arranged into a coded “header.” When a received signal matches the predefined time period profile, then the RKE transponder will wake-up to process the incoming signal data. The predefined time period profile may be programmable and may be stored in a header configuration register. Each RKE transponder has unique predefined time period on and time period off profiles.
Abstract:
A method for monitoring a semiconductor fabrication process creates a wafer of semiconductor chips. Each chip has a one or more diodes. Each diode is addressable as part of an array, corresponds to a physical location of the chip, and is connected in series to a stack. The stack is composed of one ore more vertical interconnects and metal contacts. The diode and associated stack of vertical interconnects is addressed, and the current through each of the stacks of vertical interconnects in an array is measured.
Abstract:
A method for monitoring a semiconductor fabrication process creates a wafer of semiconductor chips. Each chip has a one or more diodes. Each diode is addressable as part of an array, corresponds to a physical location of the chip, and is connected in series to a stack. The stack is composed of one ore more vertical interconnects and metal contacts. The diode and associated stack of vertical interconnects is addressed, and the current through each of the stacks of vertical interconnects in an array is measured.
Abstract:
A constant current output sink or source eliminates a current limiting series resistor for a light emitting diode (LED) and maintains a constant light intensity from the LED for all operating and manufacturing variables of a digital device since the current through the LED is maintained at a constant value. The constant current output sink or source may be programmable for selection of a constant current value from a plurality of constant current values available.