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14 条记录 (耗时 0.015 秒)

    Method for growing transparent conductive GaInO.sub.3 films by pulsed laser deposition
    11.
    发明授权
    Method for growing transparent conductive GaInO.sub.3 films by pulsed laser deposition 失效
    通过脉冲激光沉积生长透明导电GaInO3薄膜的方法

    公开(公告)号：US5538767A

    公开(公告)日：1996-07-23

    申请号：US377546

    申请日：1995-01-24

    申请人： Robert J. Cava ,  Julia M. Phillips ,  Gordon A. Thomas

    发明人： Robert J. Cava ,  Julia M. Phillips ,  Gordon A. Thomas

    IPC分类号： C23C14/08 ,  C23C14/28

    CPC分类号： C23C14/28 ,  C23C14/086 ,  Y10T428/265

    摘要： Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by pulsed laser deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from room temperature to 350.degree. C. in an ambient containing oxygen at partial pressure in the range 0.1 mTorr to 100 mTorr. The preferred laser source was an excimer laser operating in the deep ultraviolet.

    摘要翻译： 申请人已经发现通过脉冲激光沉积在衬底上生长的导电掺杂的GaInO 3薄膜具有与常规宽带隙透明导体相当的导电性，同时表现出优异的光透射性，特别是在可见光谱的绿色和蓝色波长区域。 在分压为0.1mTorr至100mTorr的含氧气氛中，底物温度范围为室温至350℃。 优选的激光源是在深紫外线中操作的准分子激光器。

    Method for growing transparent conductive gallium-indium-oxide films by sputtering
    12.
    发明授权
    Method for growing transparent conductive gallium-indium-oxide films by sputtering 失效
    通过溅射生长透明导电镓铟氧化物膜的方法

    公开(公告)号：US5473456A

    公开(公告)日：1995-12-05

    申请号：US143806

    申请日：1993-10-27

    申请人： Robert J. Cava ,  Jueinai R. Kwo ,  Gordon A. Thomas

    发明人： Robert J. Cava ,  Jueinai R. Kwo ,  Gordon A. Thomas

    IPC分类号： G02F1/1343 ,  H01L31/18 ,  H01L23/48

    CPC分类号： G02F1/13439 ,  H01L31/1884 ,  Y02E10/50

    摘要： Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by sputter deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from 100.degree. C. to 550.degree. C. in an argon-oxygen ambient of total pressure 4 mTorr to 20 mTorr with an optimal oxygen partial pressure in the range 0.5 to 2 mTorr.

    摘要翻译： 申请人已经发现通过溅射沉积在衬底上生长的导电掺杂的GaInO 3的膜具有与传统的宽带隙透明导体相当的导电性，同时表现出优异的光透射性，特别是在可见光谱的绿色和蓝色波长区域。 基底温度范围为100℃至550℃，在总压力4mTorr至20mTorr的氩 - 氧环境中，最佳氧分压范围为0.5至2mTorr。