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1.发明授权Transparent conductors comprising zinc-indium-oxide and methods for making films 失效包含氧化铟锌的透明导体和制造薄膜的方法
公开(公告)号：US5628933A
公开(公告)日：1997-05-13
申请号：US622324
申请日：1996-03-26
CPC分类号： H01B1/08 , C01G15/00 , C01G15/006 , C01G17/006 , C01G19/006 , Y10S420/903
摘要： Applicant has discovered that aliovalently doped zinc-indium-oxide where In is 40-75% of the metal elements can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency in both the visible and infrared. The material can be doped to resistivity of less than 1 milliohm-cm by small quantifies of aliovalent dopants, such as tetravalent atoms. It can be deposited on glass substrates in amorphous and polycrystalline films.
摘要翻译： 申请人已经发现，其中In是金属元素的40-75％的异氰酸盐掺杂的锌 - 铟氧化物可以实现与目前使用的宽带隙半导体相当的导电性，同时在可见光和红外线都显示增强的透明度。 该材料可以通过小数量的诸如四价原子的低价掺杂剂掺杂到小于1毫欧姆 - 厘米的电阻率。 它可以沉积在玻璃基板上的非晶和多晶膜中。
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2.发明授权Method for growing transparent conductive gallium-indium-oxide films by sputtering 失效通过溅射生长透明导电镓铟氧化物膜的方法
公开(公告)号：US5473456A
公开(公告)日：1995-12-05
申请号：US143806
申请日：1993-10-27
申请人： Robert J. Cava , Jueinai R. Kwo , Gordon A. Thomas
发明人： Robert J. Cava , Jueinai R. Kwo , Gordon A. Thomas
IPC分类号： G02F1/1343 , H01L31/18 , H01L23/48
CPC分类号： G02F1/13439 , H01L31/1884 , Y02E10/50
摘要： Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by sputter deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from 100.degree. C. to 550.degree. C. in an argon-oxygen ambient of total pressure 4 mTorr to 20 mTorr with an optimal oxygen partial pressure in the range 0.5 to 2 mTorr.
摘要翻译： 申请人已经发现通过溅射沉积在衬底上生长的导电掺杂的GaInO 3的膜具有与传统的宽带隙透明导体相当的导电性，同时表现出优异的光透射性，特别是在可见光谱的绿色和蓝色波长区域。 基底温度范围为100℃至550℃，在总压力4mTorr至20mTorr的氩 - 氧环境中，最佳氧分压范围为0.5至2mTorr。
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3.发明授权Method for growing transparent conductive GaInO.sub.3 films by pulsed laser deposition 失效通过脉冲激光沉积生长透明导电GaInO3薄膜的方法
公开(公告)号：US5538767A
公开(公告)日：1996-07-23
申请号：US377546
申请日：1995-01-24
CPC分类号： C23C14/28 , C23C14/086 , Y10T428/265
摘要： Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by pulsed laser deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from room temperature to 350.degree. C. in an ambient containing oxygen at partial pressure in the range 0.1 mTorr to 100 mTorr. The preferred laser source was an excimer laser operating in the deep ultraviolet.
摘要翻译： 申请人已经发现通过脉冲激光沉积在衬底上生长的导电掺杂的GaInO 3薄膜具有与常规宽带隙透明导体相当的导电性，同时表现出优异的光透射性，特别是在可见光谱的绿色和蓝色波长区域。 在分压为0.1mTorr至100mTorr的含氧气氛中，底物温度范围为室温至350℃。 优选的激光源是在深紫外线中操作的准分子激光器。
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公开(公告)号：US5340796A
公开(公告)日：1994-08-23
申请号：US976294
申请日：1992-11-13
申请人： Robert J. Cava , Steven A. Sunshine
发明人： Robert J. Cava , Steven A. Sunshine
CPC分类号： H01L39/126 , C04B35/4521 , C04B35/4525 , Y10S505/782
摘要： Novel superconductive oxides are disclosed. The oxides all have layered perovskite-like crystal structure and manifest superconductivity above about 77K. An exemplary material has composition Bi.sub.2.2 Sr.sub.2 Ca.sub.0.8 Cu.sub.2 O.sub.8. Other materials are described by the nominal formula X.sub.2+x M.sub.n-x Cu.sub.n-1 O.sub.2+2n+x/2.+-..delta., where X typically is Bi, or Bi together with Pb or other appropriate substituent, M is one or more divalent ion or mixture of monovalent and trivalent ion, n is an integer greater than 3, x=p/q, where p and q are integers and p
摘要翻译： 公开了新型超导氧化物。 氧化物都具有层状的钙钛矿晶体结构，超过约77K的超导体。 示例性材料具有组成Bi2.2Sr2Ca0.8Cu2O8。 其他材料由标称式X2 + xMn-xCun-1O2 + 2n + x / 2 +/-δ表示，其中X通常为Bi，或Bi与Pb或其他合适的取代基一起描述，M为一个或多个二价离子或 单价和三价离子的混合物，n是大于3的整数，x = p / q，其中p和q是整数，p
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公开(公告)号：US4542083A
公开(公告)日：1985-09-17
申请号：US618777
申请日：1984-06-11
申请人： Robert J. Cava , Donald W. Murphy
发明人： Robert J. Cava , Donald W. Murphy
CPC分类号： H01M4/485 , H01M10/052 , H01M4/48 , H01M4/131
摘要： It has been found that mixed metal oxides such as vanadium tungsten oxides or titanium niobium oxides, having the stoichiometry xM.sup.A O.sub.2 . Y.sub.2.sup.B O.sub.5 . zM.sup.C O.sub.3 constitute useful active positive electrode material in nonaqueous cells.
摘要翻译： 已经发现，具有化学计量比xMAO2的混合金属氧化物如钒氧化钨或氧化钛铌。 Y2BO5。 zMCO3在非水电池中构成有用的活性正极材料。
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6.发明授权Electronic interconnects and devices with topological surface states and methods for fabricating same 有权具有拓扑表面状态的电子互连和器件及其制造方法公开(公告)号：US09331020B2
公开(公告)日：2016-05-03
申请号：US13039762
申请日：2011-03-03
申请人： Ali Yazdani , N. Phuan Ong , Robert J. Cava
发明人： Ali Yazdani , N. Phuan Ong , Robert J. Cava
IPC分类号： H01L29/76 , H01L23/532 , H01L29/786 , H01L21/768 , C22C28/00 , C22C30/00 , H01L29/78
CPC分类号： H01L23/53209 , C22C28/00 , C22C30/00 , H01L21/76838 , H01L23/53271 , H01L29/78 , H01L29/78681 , H01L2924/0002 , H01L2924/01051 , Y10T29/49204 , H01L2924/00
摘要： An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.
摘要翻译： 公开了具有增强的电导率对缺陷的免疫性的互连。 互连包括具有拓扑表面状态的电荷载体的材料。 还公开了制造这种互连的方法。 还公开了包括这种互连的集成电路。 还公开了一种门控电子器件，其包括具有拓扑表面状态的电荷载体的材料。
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7.发明授权Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers 失效制造具有增强的介电特性的薄膜钽氧化物层和采用这种层的电容器的方法
公开(公告)号：US5948216A
公开(公告)日：1999-09-07
申请号：US649369
申请日：1996-05-17
IPC分类号： C23C14/08 , C23C14/34 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
CPC分类号： C23C14/083
摘要： The present applicants have discovered a method for making thin films comprising tantalum oxide that enhances the dielectric constant with or without TiO.sub.2 doping. Specifically, applicants have discovered sputtering Ta.sub.2 O.sub.5 in an oxygen-rich ambient at a temperature in excess of 450.degree. C. and preferably in excess of 550.degree. C., produces a new crystalline phase thin film having enhanced dielectric properties.
摘要翻译： 本申请人已经发现了制造包含氧化钽的薄膜的方法，其增强了具有或不具有二氧化钛掺杂的介电常数。 具体地，申请人已经发现在超过450℃，优选超过550℃的温度下在富氧环境中溅射Ta 2 O 5，产生具有增强的介电特性的新的结晶相薄膜。
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公开(公告)号：US5470530A
公开(公告)日：1995-11-28
申请号：US177837
申请日：1994-01-05
申请人： Robert J. Cava , Theo Siegrist
发明人： Robert J. Cava , Theo Siegrist
IPC分类号： C22C5/00 , C04B35/58 , C04B35/653 , C22C19/03 , H01L39/12 , C22C5/04 , C22C28/00 , C22C30/00
CPC分类号： C04B35/5805 , C04B35/5156 , C04B35/653 , H01L39/12 , Y10S420/901 , Y10S505/805
摘要： Material comprising an effective amount of a novel intermetallic bulk superconductor compound is disclosed. The compound has the composition LnNi.sub.2 B.sub.2 C, with Ln being Y or a rare earth (atomic number 57-71), preferably Tm, Er, Ho or Ln. A compound of composition XPt.sub.2 B.sub.2 C, with X=Y and/or La, is also a superconductor.
摘要翻译： 公开了包含有效量的新型金属间体超导体化合物的材料。 化合物具有LnNi2B2C，Ln为Y或稀土（原子序数57-71），优选为Tm，Er，Ho或Ln。 具有X = Y和/或La的组合物XPt2B2C的化合物也是超导体。
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公开(公告)号：US5407602A
公开(公告)日：1995-04-18
申请号：US143811
申请日：1993-10-27
申请人： Robert J. Cava
发明人： Robert J. Cava
IPC分类号： C01G15/00 , C23C14/08 , G02F1/1343 , H01B1/08 , H01B5/14 , H01L31/0224 , H01B1/00 , H01B1/06
CPC分类号： H01B1/08 , H01L31/022466 , G02F1/13439
摘要： Applicant has discovered that aliovalently doped gallium-indium-oxide (GaInO.sub.3) can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency and improved index matching. The material can be doped to resistivity of less than 10 milliohm-cm by small quantities of aliovalent dopants, such as tetravalent atoms. It has a refractive index of about 1.6 and can be deposited on glass substrates in polycrystalline films.
摘要翻译： 申请人已经发现，异价掺杂的镓铟氧化物（GaInO 3）可以实现与目前使用的宽带隙半导体相当的导电性，同时具有增强的透明度和改进的折射率匹配。 该材料可以通过少量的诸如四价原子的低价掺杂剂掺杂到小于10毫欧姆·厘米的电阻率。 折射率约为1.6，可沉积在多晶膜玻璃基板上。
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10.发明授权Oxide superconductors, and devices and systems comprising such a superconductor 失效氧化物超导体，以及包括这种超导体的器件和系统
公开(公告)号：US5389603A
公开(公告)日：1995-02-14
申请号：US484457
申请日：1990-02-09
申请人： Bertram J. Batlogg , Robert J. Cava
发明人： Bertram J. Batlogg , Robert J. Cava
CPC分类号： H01L39/126 , Y10S505/776 , Y10S505/779 , Y10S505/782 , Y10S505/783
摘要： A new class of high temperature superconductive oxides is disclosed. An exemplary member of the class has nominal composition Pb.sub.2 Sr.sub.2 Y.sub.0.5 Ca.sub.0.5 Cu.sub.3 O.sub.8 and has a transition temperature T.sub.c (onset) of about 79K.
摘要翻译： 公开了一类新的高温超导氧化物。 该类的示例性成员具有标称组成Pb2Sr2Y0.5Ca0.5Cu3O8，并且具有约79K的转变温度Tc（起始）。
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