公开(公告)号：US08450187B2

公开(公告)日：2013-05-28

申请号：US13608676

申请日：2012-09-10

申请人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

IPC分类号： H01L21/00

CPC分类号： H01L21/2633 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

摘要翻译： 产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。 这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离 由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。

公开(公告)号：US20060148212A1

公开(公告)日：2006-07-06

申请号：US10537509

申请日：2003-09-11

申请人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

IPC分类号： H01L21/78 ,  H01L21/301 ,  H01L21/46

CPC分类号： H01L21/2633 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

摘要翻译： 产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。 这样将硅晶片11沿着要切割的部分9以高精度切割成半导体芯片25。 这里，相邻的半导体芯片25,25的相对的切断部25a，25a从紧密接触状态彼此分离，从而也沿着要切割的部分切割芯片接合树脂层23。 因此，与不切割基底21时用刀片切割硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。

公开(公告)号：US09035216B2

公开(公告)日：2015-05-19

申请号：US13262995

申请日：2010-03-29

申请人： Ryuji Sugiura

发明人： Ryuji Sugiura

IPC分类号： B23K26/402 ,  B23K26/40

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2103/50

摘要： A laser processing device (100) comprises a laser light source (101) for emitting a laser light (L) and a laser light source controller (102) for controlling the pulse width of the laser light (L) and irradiates an object to be processed (1) with the laser light (L) while locating a converging point (P) within the object (1), so as to form a modified region along a line to cut (5) of the object (1) and generate a fracture extending in a thickness direction of the object (1) from the modified region as the modified region is formed. In the laser processing device (100), the laser light source controller (102) changes the pulse width of the laser light (L) according to a data table in which the fracture length, the thickness of the object (1), and the pulse width of the laser light (L) are associated with each other. That is, the pulse width is changed according to the fracture length generated from the modified region. Therefore, the laser processing device (100) can generate a fracture having a desirable length from the modified region.

摘要翻译： 激光加工装置（100）包括用于发射激光（L）的激光源（101）和用于控制激光（L）的脉冲宽度的激光光源控制器（102），并将物体照射 在物体（1）内定位会聚点（P）的同时用激光（L）处理（1），以形成沿物体（1）的切割线（5）的改质区域，并产生 作为形成改质区域的从改质区域沿物体（1）的厚度方向延伸的断裂。 在激光加工装置（100）中，激光光源控制装置（102）根据其断裂长度，物体（1）的厚度和数据表的数据表来改变激光的脉冲宽度 激光的脉冲宽度（L）彼此相关联。 也就是说，脉冲宽度根据从修改区域产生的断裂长度而改变。 因此，激光加工装置（100）能够从变形区域产生期望长度的断裂。

公开(公告)号：US20120091107A1

公开(公告)日：2012-04-19

申请号：US13265027

申请日：2010-03-19

申请人： Ryuji Sugiura

发明人： Ryuji Sugiura

IPC分类号： B23K26/00

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  B28D5/0011

摘要： An object to be processed 1 is irradiated with laser light L along a line to cut 5a while locating a converging point within the object 1, so as to form a modified region 7a. Thereafter, the irradiation with the laser light L is performed again along the line 5a, so as to form a modified region 7b between a front face 3 and the first modified region 7a in the object 1 and generate a fracture Cb extending from the modified region 7b to the front face 3. Therefore, a deflecting force F1 occurring when forming the modified region 7a in the object 1 can be released and canceled out by the fracture Cb. As a result, the object 1 can be inhibited from deflecting.

摘要翻译： 将被处理物体1沿着切割线5a照射激光L，同时将会聚点定位在物体1内，从而形成改质区域7a。 此后，沿着线5a再次进行激光L的照射，从而在物体1的前面3与第一改质区域7a之间形成改质区域7b，并生成从改质区域 因此，当在物体1中形成改质区域7a时发生的偏转力F1可以被断裂Cb释放和抵消。 结果，可以防止物体1的偏转。

公开(公告)号：US20070252154A1

公开(公告)日：2007-11-01

申请号：US10571594

申请日：2004-09-09

申请人： Shoichi Uchiyama ,  Ryuji Sugiura ,  Ryo Kawashima

发明人： Shoichi Uchiyama ,  Ryuji Sugiura ,  Ryo Kawashima

IPC分类号： H01L31/0256 ,  H01L21/461 ,  H01L29/12

CPC分类号： B28D5/0011 ,  B23K26/0624 ,  B23K26/0861 ,  B23K26/359 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78 ,  H01L21/7813 ,  H01L2224/48091 ,  H01L2924/16195 ,  H01L2924/163 ,  H01L2924/00014

摘要： The present invention relates to a semiconductor chip manufacturing method in which a semiconductor thin film can be cut in a relatively short time and the cut surface can be relatively smoothly formed. When an Si substrate having a diamond thin film formed on the surface thereof is cut in the chip form, a modified region based on multiphoton absorption is formed as a cutting starting point region formed along a cutting planned line by irradiating at least the Si substrate with a laser beam whose condense point is focused to the inside of the Si substrate, along the cutting planned line. The diamond thin film is cut in connection with the cutting of the Si substrate along the cutting starting point region defined by the modified region.

摘要翻译： 半导体芯片制造方法技术领域本发明涉及半导体芯片的制造方法，其中半导体薄膜可以在相当短的时间内被切割并且可以相对平滑地形成切割表面。 当在其表面上形成具有金刚石薄膜的Si衬底以芯片形式被切割时，基于多光子吸收的改性区域形成为沿着切割计划线形成的切割起点区域，通过至少将Si衬底照射到 沿着切割计划线，其冷凝点聚焦到Si衬底的内部的激光束。 金刚石薄膜与沿着由改质区域限定的切割起点区域切割Si衬底而切割。

公开(公告)号：US09409256B2

公开(公告)日：2016-08-09

申请号：US13701031

申请日：2011-05-20

申请人： Ryuji Sugiura

发明人： Ryuji Sugiura

IPC分类号： B23K26/38 ,  B23K26/00 ,  B23K26/40

CPC分类号： B23K26/38 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50

摘要： To provide a laser processing method which is capable of enhancing the dividing performance according to a required quality. By irradiating an object to be processed with a laser light L having a pulse waveform in which its half width and its bottom width are equal to one another, a plurality of modified spots are formed along a line to cut inside the object, and a modified region is formed with the plurality of modified spots. Here, a laser light source 101 controls a drive power source 51 by a laser light source controller 102, to switch among a pulse waveform among first to third pulse waveforms according to a PE value of the laser light L. In the case of a low PE value, a first pulse waveform formed such that a peak value is located on its first half side and into a saw-blade shape is set as the pulse waveform, and in the case of a high PE value, a second pulse waveform formed such that a peak value is located on its latter half side and into a saw-blade shape is set as the pulse waveform.

摘要翻译： 提供能够根据所需质量提高分割性能的激光加工方法。 通过用具有其半值宽度和底部宽度彼此相等的脉冲波形的激光L照射被处理物体，沿着要切割的物体内的线形成多个修改点，并且修改 区域形成有多个修改点。 这里，激光源101通过激光光源控制器102控制驱动电源51，根据激光L的PE值在第一至第三脉冲波形中的脉冲波形之间切换。在低的情况下 PE值，将峰值位于其第一半侧和锯齿形状上形成的第一脉冲波形设定为脉搏波形，在高PE值的情况下，形成如下的第二脉冲波形 将峰值位于其后半侧并且形成锯片形状作为脉搏波形。

公开(公告)号：US20130068739A1

公开(公告)日：2013-03-21

申请号：US13701031

申请日：2011-05-20

申请人： Ryuji Sugiura

发明人： Ryuji Sugiura

IPC分类号： B23K26/38

CPC分类号： B23K26/38 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50

摘要： To provide a laser processing method which is capable of enhancing the dividing performance according to a required quality. By irradiating an object to be processed with a laser light L having a pulse waveform in which its half width and its bottom width are equal to one another, a plurality of modified spots are formed along a line to cut inside the object, and a modified region is formed with the plurality of modified spots. Here, a laser light source 101 controls a drive power source 51 by a laser light source controller 102, to switch among a pulse waveform among first to third pulse waveforms according to a PE value of the laser light L. In the case of a low PE value, a first pulse waveform formed such that a peak value is located on its first half side and into a saw-blade shape is set as the pulse waveform, and in the case of a high PE value, a second pulse waveform formed such that a peak value is located on its latter half side and into a saw-blade shape is set as the pulse waveform.

摘要翻译： 提供能够根据所需质量提高分割性能的激光加工方法。 通过用具有其半值宽度和底部宽度彼此相等的脉冲波形的激光L照射被处理物体，沿着要切割的物体内的线形成多个修改点，并且修改 区域形成有多个修改点。 这里，激光源101通过激光光源控制器102控制驱动电源51，根据激光L的PE值在第一至第三脉冲波形中的脉冲波形之间切换。在低的情况下 PE值，将峰值位于其第一半侧和锯齿形状上形成的第一脉冲波形设定为脉搏波形，在高PE值的情况下，形成如下的第二脉冲波形 将峰值位于其后半侧并且形成锯片形状作为脉搏波形。

公开(公告)号：US20090261083A1

公开(公告)日：2009-10-22

申请号：US12064275

申请日：2006-09-13

申请人： Tetsuya Osajima ,  Ryuji Sugiura ,  Kazuhiro Atsumi

发明人： Tetsuya Osajima ,  Ryuji Sugiura ,  Kazuhiro Atsumi

IPC分类号： B23K26/38

CPC分类号： B28D5/00 ,  B23K26/066 ,  B23K26/073 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/78

摘要： In the laser processing method, the cross-sectional form of laser light L at a converging point P is such that the maximum length in a direction perpendicular to a line to cut 5 is shorter than the maximum length in a direction parallel to the line to cut 5. Therefore, when seen from the incident direction of the laser light L, a modified region 7 formed within a silicon wafer 11 has such a shape that the maximum length in the direction perpendicular to the line to cut 5 is shorter than the maximum length in the direction parallel to the line to cut 5. Forming the modified region 7 having such a shape within the object 1 can restrain twist hackles from occurring on cut surfaces when cutting the object 1 from the modified region 7 acting as a cutting start point, thereby making it possible to improve the flatness of the cut surfaces.

摘要翻译： 在激光加工方法中，会聚点P处的激光L的截面形状使得与切割线5垂直的方向上的最大长度比平行于线对的方向上的最大长度短 因此，从激光L的入射方向观察时，形成在硅晶片11内的改质区7具有与切断线5垂直的方向的最大长度比最大长度 在与待切割线平行的方向上的长度5.当从作为切割起始点的改质区域7切割物体1时，在物体1内形成具有这种形状的改质区域7可以抑制在切割面上发生扭曲 从而可以提高切割面的平坦度。

公开(公告)号：US09076855B2

公开(公告)日：2015-07-07

申请号：US13265027

申请日：2010-03-19

申请人： Ryuji Sugiura

发明人： Ryuji Sugiura

IPC分类号： B23K26/38 ,  H01L21/78 ,  B23K26/00 ,  B23K26/40 ,  B28D1/22 ,  B28D5/00

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  B28D5/0011

摘要： An object to be processed 1 is irradiated with laser light L along a line to cut 5a while locating a converging point within the object 1, so as to form a modified region 7a. Thereafter, the irradiation with the laser light L is performed again along the line 5a, so as to form a modified region 7b between a front face 3 and the first modified region 7a in the object 1 and generate a fracture Cb extending from the modified region 7b to the front face 3. Therefore, a deflecting force F1 occurring when forming the modified region 7a in the object 1 can be released and canceled out by the fracture Cb. As a result, the object 1 can be inhibited from deflecting.

摘要翻译： 将被处理物体1沿着切割线5a照射激光L，同时将会聚点定位在物体1内，从而形成改质区域7a。 此后，沿着线5a再次进行激光L的照射，从而在物体1的前面3与第一改质区域7a之间形成改质区域7b，并生成从改质区域 因此，当在物体1中形成改质区域7a时发生的偏转力F1可以被断裂Cb释放和抵消。 结果，可以防止物体1的偏转。

公开(公告)号：US08513567B2

公开(公告)日：2013-08-20

申请号：US12064275

申请日：2006-09-13

申请人： Tetsuya Osajima ,  Ryuji Sugiura ,  Kazuhiro Atsumi

发明人： Tetsuya Osajima ,  Ryuji Sugiura ,  Kazuhiro Atsumi

IPC分类号： B23K26/38 ,  B23K26/073

CPC分类号： B28D5/00 ,  B23K26/066 ,  B23K26/073 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/78

摘要： In the laser processing method, the cross-sectional form of laser light L at a converging point P is such that the maximum length in a direction perpendicular to a line to cut 5 is shorter than the maximum length in a direction parallel to the line to cut 5. Therefore, when seen from the incident direction of the laser light L, a modified region 7 formed within a silicon wafer 11 has such a shape that the maximum length in the direction perpendicular to the line to cut 5 is shorter than the maximum length in the direction parallel to the line to cut 5. Forming the modified region 7 having such a shape within the object 1 can restrain twist hackles from occurring on cut surfaces when cutting the object 1 from the modified region 7 acting as a cutting start point, thereby making it possible to improve the flatness of the cut surfaces.

摘要翻译： 在激光加工方法中，会聚点P处的激光L的截面形状使得与切割线5垂直的方向上的最大长度比平行于线对的方向上的最大长度短 因此，从激光L的入射方向观察时，形成在硅晶片11内的改质区7具有与切断线5垂直的方向的最大长度比最大长度 在与待切割线平行的方向上的长度5.当从作为切割起始点的改质区域7切割物体1时，在物体1内形成具有这种形状的改质区域7可以抑制在切割面上发生扭曲 从而可以提高切割面的平坦度。