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公开(公告)号：US5747427A
公开(公告)日：1998-05-05
申请号：US638286
申请日：1996-04-26
申请人： Norio Homma , Tadataka Morishita
发明人： Norio Homma , Tadataka Morishita
CPC分类号： H01L39/225 , H01L39/2496
摘要： Disclosed is a method of forming a thin junction film including a first thin oxide flilm presenting a superconductivity and second thin oxide film presenting an insulator properties or possibly semiconductive properties with an improved production efficiency as well as improved film quality and characteristics. Employed are first and second targets each having substantially the same chemical composition excepting oxygen content. The first target is sputtered at a target cathode voltage of minus 100 V by the use of voltage derived from an external D.C. voltage source, thereby forming a first thin oxide film. Subsequently, the target is changed over to the second target while changing the target cathode voltage into self-bias voltage of minus 50 V without any change of the other film formation conditions. Through this change-over, the sputtering of the first target is successively followed by the sputtering of the second target without any interruption of time, to consequently form the second thin oxide film onto the first thin oxide film.
摘要翻译： 公开了一种形成薄接合膜的方法，该薄接合膜包括具有超导性的第一薄氧化物薄膜和具有提高的生产效率以及改进的薄膜质量和特性的具有绝缘体性质或可能的半导体性质的第二薄氧化物薄膜。 使用的是除了氧含量之外具有基本上相同的化学组成的第一和第二靶。 通过使用从外部直流电压源得到的电压，将第一靶溅射在负100V的目标阴极电压，从而形成第一薄氧化膜。 随后，在将目标阴极电压改变为负50V的自偏压的同时将目标切换到第二目标，而不会改变其它成膜条件。 通过这种转换，第一靶的溅射依次是第二靶的溅射而不时间的中断，从而在第一薄氧化膜上形成第二薄氧化膜。
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公开(公告)号：US6008162A
公开(公告)日：1999-12-28
申请号：US50351
申请日：1998-03-31
CPC分类号： H01L39/2422 , C30B19/02 , Y10S505/729 , Y10S505/733
摘要： The present invention can provide an oxide superconductive film with a smooth surface and at homogeneous thickness on a simple substrate structure at a high film formation rate. In a liquid phase epitaxial growth method for producing an ReBa.sub.2 Cu.sub.3 Ox film (3) (Rerepresents one selected from lanthanoids such as Y and Nd, and X represents the oxygen amount) having a 123 type crystal structure from a molten liquid (1), a substrate (2) surface is inclined by 1 degree to 44 degrees with respect to the molten liquid surface at the time of separating the film from the molten liquid after film formation. After separating the film from the molten liquid, the substrate is rotated at 300 rpm to 3000 rpm for 5 seconds to 5 minutes. The film formation atmosphere contains 2 at. % of oxygen and 98 at. % of nitrogen, and the film formation temperature is 900 to 970.degree. C.
摘要翻译： 本发明可以以高成膜速度在简单的衬底结构上提供具有光滑表面和均匀厚度的氧化物超导膜。 在熔融液体（1）中制备具有123型晶体结构的ReBa2Cu3Ox膜（3）（Rerepresented选自镧系元素，例如Y和Nd，X表示氧量）的液相外延生长方法中， （2）表面在成膜后从熔融液体中分离膜时相对于熔融液体表面倾斜1度至44度。 在将膜从熔融液体中分离后，将基板以300rpm旋转至3000rpm 5秒钟至5分钟。 成膜气氛含有2个。 氧气百分比为98。 的氮气，成膜温度为900〜970℃。
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公开(公告)号：US5679625A
公开(公告)日：1997-10-21
申请号：US563905
申请日：1995-11-22
申请人： Wataru Ito , Tadataka Morishita , Norio Homma , Yukihisa Yoshida
发明人： Wataru Ito , Tadataka Morishita , Norio Homma , Yukihisa Yoshida
CPC分类号： C23C14/35 , C23C14/087 , C23C14/46 , H01L39/2435 , Y10S505/731
摘要： A method of making a superconducting thin film of a Y--Ba--Cu--O series material by using a diode parallel plate type sputtering apparatus including a vacuum chamber, a substrate disposed within the vacuum chamber and having a substantially flat surface on which the superconducting thin film is to be formed, and a plate-shaped target functioning as a cathode and disposed within the vacuum chamber to parallelly face to the flat surface of the substrate, the target being made of the same material as the superconducting thin film, a plasma gas being introduced into the vacuum chamber, and a voltage being applied between the cathode and the substrate, wherein the method comprises the steps of applying a high frequency voltage having a frequency higher than 40 MHz between the cathode and the substrate to generate plasma of the introduced gas, superimposing a DC voltage (V) on the high frequency voltage in a polarity that the cathode becomes negative, and setting the DC voltage at a value where the DC voltage is substantially unchanged with variation of a cathode current flowing through the target when adjusting the DC voltage and controlling a value of the DC current while maintaining the DC voltage substantially at the set value.
摘要翻译： 通过使用包括真空室的二极管平行板型溅射装置制造Y-Ba-Cu-O系材料的超导薄膜的方法，设置在真空室内的基板，并具有基本平坦的表面，超导 要形成薄膜，并且一个板状靶用作阴极并且设置在真空室内以平行地面对基板的平坦表面，靶由与超导薄膜相同的材料制成，等离子体 气体被引入真空室中，并且施加在阴极和衬底之间的电压，其中该方法包括在阴极和衬底之间施加频率高于40MHz的高频电压以产生等离子体的步骤 引入气体，以与阴极变为负极性的高频电压叠加直流电压（V），将直流电压设定为 当调节直流电压并控制直流电流的值同时保持直流电压基本上处于设定值时，直流电压随着流经目标的阴极电流的变化而基本上不变。
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公开(公告)号：US5466665A
公开(公告)日：1995-11-14
申请号：US263957
申请日：1994-06-16
申请人： Yukihisa Yoshida , Wataru Ito , Tadataka Morishita
发明人： Yukihisa Yoshida , Wataru Ito , Tadataka Morishita
CPC分类号： C23C14/3435 , C23C14/087 , C23C14/35 , H01L39/2435
摘要： A method of manufacturing YBCO superconducting thin films is obtained which is capable of providing superconducting thin films having excellent crystallinity in a high yield by introducing a new film formation parameter in a hybrid plasma sputtering method. When a Y--Ba--Cu--O type superconducting thin film is formed by using a parallel plate sputtering method, a high-frequency voltage generated by a high-frequency power source is superimposed on a DC voltage generated by a DC power source and applied to the cathode electrode at the same time, an electrically conductive YBCO target is placed on the cathode, and the film formation conditions are controlled on the basis of the difference between the voltage drops in each ion sheath formed on the substrate and directly on the target by applying a DC voltage to a substrate holder from the DC power source.
摘要翻译： 获得制造YBCO超导薄膜的方法，其能够通过在复合等离子体溅射法中引入新的成膜参数，以高产率提供具有优异结晶性的超导薄膜。 当使用平行板溅射法形成Y-Ba-Cu-O型超导薄膜时，将由高频电源产生的高频电压叠加在由直流电源产生的直流电压上并施加 同时向阴极施加导电YBCO靶，并且基于形成在基板上的每个离子鞘中的直接在目标上的电压降之间的差值来控制成膜条件 通过从DC电源向基板保持器施加DC电压。
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公开(公告)号：US5369275A
公开(公告)日：1994-11-29
申请号：US911740
申请日：1992-07-10
申请人： Toshio Usui , Yuji Aoki , Masayuki Kamei , Tadataka Morishita
发明人： Toshio Usui , Yuji Aoki , Masayuki Kamei , Tadataka Morishita
IPC分类号： G01N23/22 , G01N23/225 , G01Q30/02 , G01Q30/16 , H01J37/26
CPC分类号： G01N23/2252 , G01N23/2206 , G01N23/2208
摘要： An apparatus for solid surface analysis capable of carrying out the X-ray fluorescence analysis of the sample surface according to the characteristic X-rays detected by the energy dispersive X-ray detector. The apparatus can also obtain an enlarged image of the sample surface according to the secondary electrons emitted from the excited sample surface detected by the electron detector. The apparatus can also carry out an X-ray diffraction analysis of the sample surface according to diffracted X-rays detected by the diffracted X-ray detector. The apparatus is also capable of attaching or detaching the energy dispersive X-ray detector easily by incorporating a connection room which can be put in a vacuum state independent of the vacuum chamber.
摘要翻译： 一种用于固体表面分析的装置，其能够根据由能量色散X射线检测器检测的特征X射线进行样品表面的X射线荧光分析。 该装置还可以根据由电子检测器检测到的被激发的样品表面发射的二次电子获得样品表面的放大图像。 该装置还可以根据衍射X射线检测器检测的衍射X射线进行样品表面的X射线衍射分析。 该装置还能够通过结合可以独立于真空室的真空状态的连接室容易地附接或分离能量色散X射线检测器。
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公开(公告)号：US5225393A
公开(公告)日：1993-07-06
申请号：US819395
申请日：1992-01-10
CPC分类号： H01J37/3473 , C23C14/087 , C23C14/352 , H01J37/3408 , H01L39/2435 , Y10S505/731
摘要： A process for forming a thin oxide film on an underlying surface adapted for film formation thereon according to a radio frequency magnetron sputtering method using an oxide target(s). The excitation frequency is a frequency which is higher than 13.56 MHz and which provides a negative target self-bias voltage permitting of film formation.
摘要翻译： 根据使用氧化物靶的射频磁控溅射法，在适合于其上形成膜的下表面上形成薄氧化膜的方法。 激发频率是高于13.56MHz的频率，并且提供允许成膜的负目标自偏压。
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