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    Process for forming a semiconductive thin film containing a junction
    1.
    发明授权
    Process for forming a semiconductive thin film containing a junction 失效
    用于形成含有结的半导体薄膜的工艺

    公开(公告)号：US5747427A

    公开(公告)日：1998-05-05

    申请号：US638286

    申请日：1996-04-26

    申请人： Norio Homma ,  Tadataka Morishita

    发明人： Norio Homma ,  Tadataka Morishita

    IPC分类号： H01L39/22 ,  H01L39/24 ,  C23C14/34

    CPC分类号： H01L39/225 ,  H01L39/2496

    摘要： Disclosed is a method of forming a thin junction film including a first thin oxide flilm presenting a superconductivity and second thin oxide film presenting an insulator properties or possibly semiconductive properties with an improved production efficiency as well as improved film quality and characteristics. Employed are first and second targets each having substantially the same chemical composition excepting oxygen content. The first target is sputtered at a target cathode voltage of minus 100 V by the use of voltage derived from an external D.C. voltage source, thereby forming a first thin oxide film. Subsequently, the target is changed over to the second target while changing the target cathode voltage into self-bias voltage of minus 50 V without any change of the other film formation conditions. Through this change-over, the sputtering of the first target is successively followed by the sputtering of the second target without any interruption of time, to consequently form the second thin oxide film onto the first thin oxide film.

    摘要翻译： 公开了一种形成薄接合膜的方法，该薄接合膜包括具有超导性的第一薄氧化物薄膜和具有提高的生产效率以及改进的薄膜质量和特性的具有绝缘体性质或可能的半导体性质的第二薄氧化物薄膜。 使用的是除了氧含量之外具有基本上相同的化学组成的第一和第二靶。 通过使用从外部直流电压源得到的电压，将第一靶溅射在负100V的目标阴极电压，从而形成第一薄氧化膜。 随后，在将目标阴极电压改变为负50V的自偏压的同时将目标切换到第二目标，而不会改变其它成膜条件。 通过这种转换，第一靶的溅射依次是第二靶的溅射而不时间的中断，从而在第一薄氧化膜上形成第二薄氧化膜。

    Method of making an oxide superconducting thin film
    2.
    发明授权
    Method of making an oxide superconducting thin film 失效
    制造氧化物超导薄膜的方法

    公开(公告)号：US5679625A

    公开(公告)日：1997-10-21

    申请号：US563905

    申请日：1995-11-22

    申请人： Wataru Ito ,  Tadataka Morishita ,  Norio Homma ,  Yukihisa Yoshida

    发明人： Wataru Ito ,  Tadataka Morishita ,  Norio Homma ,  Yukihisa Yoshida

    IPC分类号： C01G1/00 ,  C01G3/00 ,  C23C14/08 ,  C23C14/35 ,  C23C14/46 ,  C30B29/22 ,  H01L39/24 ,  C23C14/34

    CPC分类号： C23C14/35 ,  C23C14/087 ,  C23C14/46 ,  H01L39/2435 ,  Y10S505/731

    摘要： A method of making a superconducting thin film of a Y--Ba--Cu--O series material by using a diode parallel plate type sputtering apparatus including a vacuum chamber, a substrate disposed within the vacuum chamber and having a substantially flat surface on which the superconducting thin film is to be formed, and a plate-shaped target functioning as a cathode and disposed within the vacuum chamber to parallelly face to the flat surface of the substrate, the target being made of the same material as the superconducting thin film, a plasma gas being introduced into the vacuum chamber, and a voltage being applied between the cathode and the substrate, wherein the method comprises the steps of applying a high frequency voltage having a frequency higher than 40 MHz between the cathode and the substrate to generate plasma of the introduced gas, superimposing a DC voltage (V) on the high frequency voltage in a polarity that the cathode becomes negative, and setting the DC voltage at a value where the DC voltage is substantially unchanged with variation of a cathode current flowing through the target when adjusting the DC voltage and controlling a value of the DC current while maintaining the DC voltage substantially at the set value.

    摘要翻译： 通过使用包括真空室的二极管平行板型溅射装置制造Y-Ba-Cu-O系材料的超导薄膜的方法，设置在真空室内的基板，并具有基本平坦的表面，超导 要形成薄膜，并且一个板状靶用作阴极并且设置在真空室内以平行地面对基板的平坦表面，靶由与超导薄膜相同的材料制成，等离子体 气体被引入真空室中，并且施加在阴极和衬底之间的电压，其中该方法包括在阴极和衬底之间施加频率高于40MHz的高频电压以产生等离子体的步骤 引入气体，以与阴极变为负极性的高频电压叠加直流电压（V），将直流电压设定为 当调节直流电压并控制直流电流的值同时保持直流电压基本上处于设定值时，直流电压随着流经目标的阴极电流的变化而基本上不变。

    Apparatus for producing oxide thin film
    5.
    发明授权
    Apparatus for producing oxide thin film 失效
    氧化物薄膜的制造装置

    公开(公告)号：US5421890A

    公开(公告)日：1995-06-06

    申请号：US98903

    申请日：1993-07-29

    申请人： Ryusuke Kita ,  Takashi Hase ,  Masato Sasaki ,  Tadataka Morishita

    发明人： Ryusuke Kita ,  Takashi Hase ,  Masato Sasaki ,  Tadataka Morishita

    IPC分类号： C23C8/12 ,  C04B41/50 ,  C04B41/85 ,  C04B41/87 ,  C23C8/16 ,  C23C14/08 ,  C23C14/24 ,  C23C14/58 ,  C30B23/02 ,  C23C16/40

    CPC分类号： C04B41/009 ,  C04B41/5027 ,  C04B41/5072 ,  C04B41/85 ,  C04B41/87 ,  C23C14/08 ,  C23C14/24 ,  C30B23/002 ,  C30B23/02 ,  C30B29/16 ,  C30B29/22

    摘要： Disclosed is an oxide thin film producing method and apparatus for producing an oxide thin film having excellent crystallinity and purity with high productivity while correctly controlling the composition of the oxide thin film. After reducing the pressure inside a vacuum chamber to 1.times.10.sup.-9 Torr or less, a metal thin film is formed by evaporating a specified metal element and depositing vapor of the metal element on a substrate in the vacuum chamber. Then a cover member is moved upward to closely abut to a cover receiving member to thereby form an airtight chamber for enclosing the substrate airtightly in the vacuum chamber. With the degree of vacuum around the airtight chamber maintained, O.sub.2 gas is directly introduced into the airtight chamber through a gas piping to oxidize the metal thin film and thereby form an oxide thin film. At the same time, the gas inside the airtight chamber is discharged directly out of the vacuum chamber through a gas piping.

    摘要翻译： 公开了一种用于在正确控制氧化物薄膜的组成的同时以高生产率制造具有优异的结晶度和纯度的氧化物薄膜的氧化物薄膜制造方法和装置。 在将真空室内的压力降低到1×10 -9 Torr或更小之后，通过蒸发特定的金属元素并将金属元素的蒸气沉积在真空室中的基底上来形成金属薄膜。 然后，盖构件向上移动以紧密地邻接到盖接收构件，从而形成用于将基底气密地封闭在真空室中的气密室。 随着保持气密室周围的真空度，通过气体管道将O2气体直接引入气密室，以氧化金属薄膜，从而形成氧化物薄膜。 同时，气密室内的气体通过气体管道直接排出真空室外。

    Method for identifying surface atoms of solid sample and apparatus therefor
    8.
    发明授权
    Method for identifying surface atoms of solid sample and apparatus therefor 失效
    确定固体样品表面原子的方法及其设备

    公开(公告)号：US5635716A

    公开(公告)日：1997-06-03

    申请号：US614678

    申请日：1996-03-13

    申请人： Ziyuan Liu ,  Tadataka Morishita

    发明人： Ziyuan Liu ,  Tadataka Morishita

    IPC分类号： G01N23/20 ,  G01N23/225 ,  H01J37/252 ,  H01J37/26

    CPC分类号： G01N23/2251 ,  H01J37/252 ,  H01J2237/255 ,  H01J2237/2561

    摘要： The atoms constituting a surface of a solid sample are identified by first forming, on the surface, island-like deposits of a substance capable of generating fluorescent X-rays upon being energized by an electron beam. The deposits are then energized with the electron beam so that fluorescent X-rays are emitted therefrom and reflected on the surface. From the critical angle for total reflection of the fluorescent X-rays reflected on that portion of the surface of the sample on which no deposits are present, the atoms constituting the surface may be determined. An apparatus for carrying out the above method is also disclosed which is a modification of the conventional RHEED/TRAXS device.

    摘要翻译： 通过首先在表面上形成能够通过电子束激发能够产生荧光X射线的物质的岛状沉积物来识别构成固体样品表面的原子。 然后用电子束使沉积物通电，使得荧光X射线从其发射并在表面上反射。 从在没有沉积物的样品表面部分上反射的荧光X射线的全反射的临界角度，可以确定构成表面的原子。 还公开了用于执行上述方法的装置，其是常规RHEED / TRAXS装置的修改。