Display module
    11.
    发明授权

    公开(公告)号:US10510980B2

    公开(公告)日:2019-12-17

    申请号:US14983460

    申请日:2015-12-29

    Abstract: A display module includes a window member including a display area and a bezel area, a display panel including a display part corresponding to the display area, and an edge part corresponding to the bezel area and bent from the display part to extend away from the window member, and a protective frame accommodating the display panel and coupled to the window member.

    DISPLAY DEVICE INCLUDING A CMOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20190296095A1

    公开(公告)日:2019-09-26

    申请号:US16437857

    申请日:2019-06-11

    Abstract: A display device includes at least one transistor. The transistor has an active pattern including a first active area and a second active area. The first active area includes a first channel area and an n-doped area contacting the first channel area. The second active area includes a second channel area and a p-doped area contacting the second channel area. A first insulation layer covers at least a portion of the active pattern. A first gate electrode is disposed on the first insulation layer and at least partially overlaps the first channel area. A second gate electrode is disposed on the first insulation layer and at least partially overlaps the second channel area. A taper angle of the second gate electrode is larger than a taper angle of the first gate electrode.

    Display device and method of manufacturing the same

    公开(公告)号:US10403649B2

    公开(公告)日:2019-09-03

    申请号:US15869748

    申请日:2018-01-12

    Abstract: A display device includes a common active pattern, a first gate electrode, and a second gate electrode. The common active pattern includes an NMOS area, a PMOS area, and a silicide area in a same layer as the NMOS area and the PMOS area. The silicide area electrically connects the NMOS area to the PMOS area. The NMOS area includes a first channel area and an n-doped area contacting the first channel area. The PMOS area includes a second channel area and a p-doped area contacting the second channel area. The first gate electrode overlaps the first channel area, and the second gate electrode overlaps the second channel area.

    Display device
    15.
    发明授权

    公开(公告)号:US11990079B2

    公开(公告)日:2024-05-21

    申请号:US17465845

    申请日:2021-09-03

    CPC classification number: G09G3/2092 G09G2310/027 G09G2320/0673

    Abstract: A display device includes a display panel including a plurality of first pixels disposed in a first display area and a plurality of second pixels disposed in a second display area adjacent to the first display area, a gate driver disposed in the second display area of the display panel to overlap a portion of the second pixels and driving the first and second pixels, a controller receiving image data and converting the image data to image signals, and a data driver converting the image signals to data signals and outputting the data signals to the first and second pixels. The controller compensates for effective data corresponding to the second pixels and reflects the compensated effective data to the image signals.

    Display apparatus
    18.
    发明授权

    公开(公告)号:US11839112B2

    公开(公告)日:2023-12-05

    申请号:US17370857

    申请日:2021-07-08

    CPC classification number: H10K59/1213 H10K59/1216

    Abstract: A display apparatus includes a substrate including a display area in which a display element is arranged, a first thin-film transistor arranged in the display area and including a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, the first semiconductor layer including a silicon semiconductor, a first interlayer insulating layer covering the first gate electrode, a second thin-film transistor on the first interlayer insulating layer and including a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer, the second semiconductor layer including an oxide semiconductor, and an upper electrode arranged on the first interlayer insulating layer and including a same material as that of the second semiconductor layer and at least overlapping the first gate electrode.

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