Bulk-acoustic wave resonator
    12.
    发明授权

    公开(公告)号:US11558025B2

    公开(公告)日:2023-01-17

    申请号:US17074978

    申请日:2020-10-20

    Abstract: A bulk-acoustic wave resonator includes: a first electrode; a piezoelectric layer at least partially disposed on an upper portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The second electrode includes a frame disposed at an edge of an active region of the bulk-acoustic wave resonator, and the first electrode, the piezoelectric layer and the second electrode are disposed to overlap one another at the edge of the active region. The frame includes a wall disposed at the edge of the active region and a trench formed on an internal side of the wall. An internal boundary line of the trench has a concave-convex shape in a plane parallel to an upper surface of the frame.

    Bulk-acoustic wave resonator
    13.
    发明授权

    公开(公告)号:US11277113B2

    公开(公告)日:2022-03-15

    申请号:US16936807

    申请日:2020-07-23

    Abstract: A bulk-acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; a metal pad connected to the first electrode and the second electrode; and a connection member connected an upper surface of the metal pad. A lower end portion of the connection member includes a tapered portion decreasing in a diameter in a direction toward a lower end of the connection member, and an angle between an inclined surface of the tapered portion and the upper surface of the metal pad is 45° to 80°.

Patent Agency Ranking