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公开(公告)号：US10897002B2
公开(公告)日：2021-01-19
申请号：US15824194
申请日：2017-11-28
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Dae Hun Jeong , Sang Uk Son , Tae Yoon Kim , Dae Ho Kim
IPC: H01L41/047 , H03H9/02 , H01L41/22 , H03H3/02 , H03H9/17 , H03H9/54 , H01L41/187
Abstract: An acoustic resonator includes a resonant portion including a piezoelectric layer disposed between a first electrode and a second electrode, and a frame portion disposed along an outer edge of the second electrode. The frame portion includes three reflective portions reflecting lateral waves generated in the resonant portion.
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公开(公告)号：US10355195B2
公开(公告)日：2019-07-16
申请号：US15381397
申请日：2016-12-16
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Dae Ho Kim , Dae Hun Jeong , Won Han , Sang Uk Son
IPC: H01L41/053 , H01L41/047 , H01L41/27 , H01L41/297 , H03H9/17
Abstract: An acoustic resonator includes: a substrate; a resonance part including a lower electrode, a piezoelectric layer, and an upper electrode sequentially stacked on the substrate, and a frame formed on the upper electrode along an edge of the upper electrode; and a trench part formed in at least one side of the resonance part and making a thickness of the resonance part asymmetrical.
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公开(公告)号：US11563417B2
公开(公告)日：2023-01-24
申请号：US16137710
申请日：2018-09-21
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Dae Hun Jeong , Sang Uk Son , Won Han , Jong Woon Kim
Abstract: An acoustic resonator includes: a substrate; a resonant region including a first electrode, a piezoelectric layer, and a second electrode disposed on the substrate, and a reflective layer disposed along a periphery of the resonant region; and a connection electrode extending from the second electrode. The reflective layer includes a second section disposed between the resonant region and the connection electrode, and a first section, and a cross-sectional area of the first section is different than a cross-sectional area of the second section.
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公开(公告)号：US20180234075A1
公开(公告)日：2018-08-16
申请号：US15809545
申请日：2017-11-10
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Tae Hun Lee , Dae Hun Jeong , Chang Hyun Lim , Tae Yoon Kim , Moon Chul Lee
IPC: H03H9/02 , H01L41/047 , H03H9/17 , H03H9/13
CPC classification number: H03H9/02086 , H01L41/0472 , H01L41/0475 , H03H3/02 , H03H9/13 , H03H9/132 , H03H9/17 , H03H9/173 , H03H9/205 , H03H2003/021
Abstract: A bulk acoustic wave resonator includes: a substrate; a lower electrode connecting member disposed on the substrate; a resonating member including a lower electrode disposed on the lower electrode connecting member, a piezoelectric layer disposed on the lower electrode, and an upper electrode disposed on the piezoelectric layer; and an upper electrode connecting member electrically connecting the upper electrode and the substrate to each other. The upper electrode connecting member is extended from the substrate outside of the resonating member and is connected to a top surface of the upper electrode. The lower electrode connecting member electrically connects the lower electrode and the substrate to each other and includes a ring shape corresponding to a shape of the resonating member so as to support an edge of the resonating member.
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公开(公告)号：US11502663B2
公开(公告)日：2022-11-15
申请号：US16441599
申请日：2019-06-14
Applicant: Samsung Electro-Mechanics., Co., Ltd.
Inventor： Tae Yoon Kim , Jong Woon Kim , Dae Hun Jeong , Moon Chul Lee
Abstract: An acoustic resonator includes: a resonating unit including a piezoelectric layer, a first electrode disposed on a lower side of the piezoelectric layer, and a second electrode disposed on an upper side of the piezoelectric layer; a substrate disposed below the resonating unit; a support unit forming a cavity between the substrate and the resonating unit; and a pillar extending through the cavity and connecting the resonating unit to the substrate. The resonating unit further includes a first insertion layer disposed above the pillar.
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Patent Agency Ranking
公开(公告)号：US10267699B2
公开(公告)日：2019-04-23
申请号：US15045684
申请日：2016-02-17
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Chang Hyun Lim , Dae Hun Jeong , Tae Hun Lee
IPC: G01L9/00
Abstract: A pressure sensor element includes a die; a cavity and a trench formed in one surface of the die and defining therebetween a partition wall integral with and formed of the same material as the die; and a membrane formed on the die and covering the cavity and the trench.
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公开(公告)号：US11595022B2
公开(公告)日：2023-02-28
申请号：US16898835
申请日：2020-06-11
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Won Han , Sung Wook Kim , Dae Hun Jeong , Sang Uk Son , Sang Heon Han , Jeong Hoon Ryou
Abstract: A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10.
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公开(公告)号：US11569793B2
公开(公告)日：2023-01-31
申请号：US16692142
申请日：2019-11-22
Applicant: Samsung Electro-Mechanics., Co., Ltd.
Inventor： Tae Yoon Kim , Jong Woon Kim , Dae Hun Jeong , Moon Chul Lee
IPC: H03H9/02 , H01L41/047 , H03H9/15 , H03H9/13
Abstract: An acoustic resonator includes: a resonating unit including a resonating unit including a piezoelectric layer and first and second electrodes disposed on a lower side and an upper side of the piezoelectric layer, respectively; a substrate disposed on a lower side of the resonating unit; a support unit providing a cavity between the substrate and the resonating unit; and an intermediate metal layer separated from the second electrode and disposed in the resonating unit such that at least a portion thereof is surrounded by the piezoelectric layer and the second electrode.
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公开(公告)号：US11050404B2
公开(公告)日：2021-06-29
申请号：US16411273
申请日：2019-05-14
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Tae Kyung Lee , Yoon Sok Park , Dae Hun Jeong
Abstract: A bulk-acoustic wave resonator includes: a first substrate formed of a first material; an insulating layer or a piezoelectric layer disposed on a first side of the first substrate; and a second substrate formed of a second material and disposed on a second side of the first substrate, wherein the second material has thermal conductivity that is higher than a thermal conductivity of the first material.
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公开(公告)号：US10812040B2
公开(公告)日：2020-10-20
申请号：US16356223
申请日：2019-03-18
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Yoon Sok Park , Won Kyu Jeung , Tah Joon Park , Dae Hun Jeong , Sang Uk Son
Abstract: An acoustic wave filter device includes resonance portions, first and second metal pads. The resonance portions each includes a lower electrode disposed on a substrate, a piezoelectric layer disposed on at least a portion of the lower electrode, and an upper electrode disposed on at least a portion of the piezoelectric layer. The first metal pads are connected to one of the upper electrode and the lower electrode of a corresponding resonance portion among the resonance portions. The second metal pads are disposed outwardly of an active region and connected to the other one of the upper electrode and the lower electrode of adjacent resonant portions among the resonance portions. A ring portion is disposed outwardly of the active region in which the lower electrode, the piezoelectric layer, and the upper electrode overlap is disposed only on a portion of any one of the first and second metal pads.
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