SEMICONDUCTOR DEVICE
    11.
    发明申请

    公开(公告)号:US20240389308A1

    公开(公告)日:2024-11-21

    申请号:US18589891

    申请日:2024-02-28

    Abstract: A semiconductor device includes a substrate including a memory cell array region, a contact region, and a connection region, gate electrodes on the memory cell array region and the connection region, and stacked in a vertical direction, active layers on the memory cell array region and stacked in the vertical direction, and conductive connection patterns on the connection region and the contact region, and stacked in the vertical direction, wherein each of the active layers includes a channel region vertically overlapping the gate electrodes, the gate electrodes are electrically connected to the conductive connection patterns, the conductive connection patterns have a step structure including step regions spaced apart from each other, and the step structure has a first step portion stepping down along a first direction and a second step portion facing the first step portion and stepping up along the first direction.

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