公开(公告)号：US10923655B2

公开(公告)日：2021-02-16

申请号：US16726513

申请日：2019-12-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Hyun Jeong ,  Ilmok Park ,  Si-Ho Song

IPC: G11C11/00 ,  H01L45/00 ,  G11C13/00

Abstract: Disclosed are a variable resistance memory device and a method of manufacturing the same. The device comprises a first conductive line extending in a first direction, a second conductive line extending in a second direction intersecting the first direction, a memory cell at an intersection between the first conductive line and the second conductive line, a first electrode between the first conductive line and the memory cell, and a second electrode between the second conductive line and the memory cell. The memory cell comprises a switching pattern, an intermediate electrode, a first resistivity control pattern, and a variable resistance pattern that are connected in series between the first conductive line and the second conductive line. Resistivity of the first resistivity control pattern is less than resistivity of the second electrode.

公开(公告)号：US10923654B2

公开(公告)日：2021-02-16

申请号：US16426216

申请日：2019-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ilmok Park ,  Kyusul Park ,  Seulji Song ,  Kwang-Woo Lee

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

Abstract: A variable resistance memory device includes a word line extending in a first direction, a bit line on the word line and extending in a second direction intersecting the first direction, a switching pattern between the bit line and the word line, a phase change pattern between the switching pattern and the word line, and a bottom electrode between the phase change pattern and the word line, wherein the phase change pattern has a bottom area greater than a top area of the bottom electrode, a thickness of the phase change pattern being greater than a thickness of the bottom electrode, and wherein the bottom and top areas are defined in the first and second directions, and the thicknesses are defined in a third direction intersecting the first and second directions.

公开(公告)号：US20200066985A1

公开(公告)日：2020-02-27

申请号：US16401297

申请日：2019-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ilmok Park ,  Gwang-Hyun Baek ,  Seulji Song

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00 ,  G11C5/06

Abstract: A variable resistance memory device includes a substrate. A first conductive line is disposed on the substrate and extends primarily in a first direction. A second conductive line is disposed on the substrate and extends primarily in a second direction. The second direction intersects the first direction. A phase change pattern is disposed between the first conductive line and the second conductive line. A bottom electrode is disposed between the phase change pattern and the first bottom electrode includes first a first sidewall segment that connects the first conductive line and the phase change pattern to each other. The phase change pattern has a width in the first direction that decreases toward the substrate. The first sidewall segment has a first lateral surface and a second lateral surface that face each other. A lowermost portion of the phase change pattern is disposed between the first lateral surface and the second lateral surface.