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    SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME
    1.
    发明申请
    SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME 有权

    公开(公告)号：US20220216402A1

    公开(公告)日：2022-07-07

    申请号：US17468739

    申请日：2021-09-08

    申请人： Samsung Electronics Co., Ltd.

    发明人： Hye Ji Yoon ,  O Ik Kwon ,  Yun Seung Kang ,  Sang-Kuk Kim ,  Gwang-Hyun Baek ,  Tae Hyung Lee ,  Su Jin Jeon

    IPC分类号： H01L45/00 ,  H01L27/24 ,  H01L23/528

    摘要： A semiconductor memory device in which performance is improved by reducing a wiring resistance is provided. The semiconductor memory device comprising an inter-wiring insulation film on a substrate, a first wiring pattern extending in a first direction, in the inter-wiring insulation film, a barrier insulation film that is on an upper surface of the inter-wiring insulation film, a barrier conductive pattern electrically connected to the first wiring pattern, in the barrier insulation film, a memory cell electrically connected to the barrier conductive pattern and including a selection pattern and a variable resistor pattern, and a second wiring pattern extending in a second direction intersecting the first direction, on the memory cell, wherein a width of the barrier conductive pattern in the second direction is different from a width in the second direction of a portion of the memory cell that is adjacent to the barrier conductive pattern.

    Variable resistance memory device and method of fabricating the same
    7.
    发明授权
    Variable resistance memory device and method of fabricating the same 有权

    公开(公告)号：US10991880B2

    公开(公告)日：2021-04-27

    申请号：US16401297

    申请日：2019-05-02

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Ilmok Park ,  Gwang-Hyun Baek ,  Seulji Song

    IPC分类号： H01L47/00 ,  H01L45/00 ,  G11C5/06 ,  G11C13/00 ,  H01L27/24

    摘要： A variable resistance memory device includes a substrate. A first conductive line is disposed on the substrate and extends primarily in a first direction. A second conductive line is disposed on the substrate and extends primarily in a second direction. The second direction intersects the first direction. A phase change pattern is disposed between the first conductive line and the second conductive line. A bottom electrode is disposed between the phase change pattern and the first bottom electrode includes first a first sidewall segment that connects the first conductive line and the phase change pattern to each other. The phase change pattern has a width in the first direction that decreases toward the substrate. The first sidewall segment has a first lateral surface and a second lateral surface that face each other. A lowermost portion of the phase change pattern is disposed between the first lateral surface and the second lateral surface.

    VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    8.
    发明申请
    VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开

    公开(公告)号：US20200066985A1

    公开(公告)日：2020-02-27

    申请号：US16401297

    申请日：2019-05-02

    申请人： Samsung Electronics Co., Ltd.

    发明人： Ilmok Park ,  Gwang-Hyun Baek ,  Seulji Song

    IPC分类号： H01L45/00 ,  H01L27/24 ,  G11C13/00 ,  G11C5/06

    摘要： A variable resistance memory device includes a substrate. A first conductive line is disposed on the substrate and extends primarily in a first direction. A second conductive line is disposed on the substrate and extends primarily in a second direction. The second direction intersects the first direction. A phase change pattern is disposed between the first conductive line and the second conductive line. A bottom electrode is disposed between the phase change pattern and the first bottom electrode includes first a first sidewall segment that connects the first conductive line and the phase change pattern to each other. The phase change pattern has a width in the first direction that decreases toward the substrate. The first sidewall segment has a first lateral surface and a second lateral surface that face each other. A lowermost portion of the phase change pattern is disposed between the first lateral surface and the second lateral surface.