公开(公告)号：US10468234B2

公开(公告)日：2019-11-05

申请号：US15208787

申请日：2016-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongtaek Lim ,  Kangsoo Kim ,  Hojun Kim ,  Jeonghoon Nam ,  Sejun Park

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

Abstract: A semiconductor device fabricating apparatus includes a gas mixer having an upper surface and a lower surface, each of the upper and lower surfaces has an elliptical plane, and a side surface connecting the upper and lower surfaces, a gas inlet pipe on an upper portion of the gas mixer, and a gas outlet pipe on a lower portion of the gas mixer.

公开(公告)号：US09659958B2

公开(公告)日：2017-05-23

申请号：US15291521

申请日：2016-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Hoon Lee ,  Keejeong Rho ,  Sejun Park ,  Jinhyun Shin ,  Dong-Sik Lee ,  Woong-Seop Lee

IPC: H01L27/115 ,  H01L23/528 ,  H01L27/11582 ,  H01L27/11556

CPC classification number: H01L27/11582 ,  G11C16/08 ,  H01L23/528 ,  H01L27/11556 ,  H01L27/1157

Abstract: A semiconductor device includes lower and upper selection lines, a cell gate structure, a lower dummy structure and an upper dummy structure. The cell gate structure is between the lower and upper selection lines and includes cell gate electrodes stacked in a first direction. The lower dummy structure is between the lower selection line and the cell gate structure and includes a lower dummy gate line spaced from a lowermost one of the cell gate electrodes by a first distance. The upper dummy structure is between the upper selection line and the cell gate structure and includes an upper dummy gate line spaced from an uppermost one of the cell gate electrodes by a second distance. The cell gate electrodes are spaced by a third distance less than each of the first and second distances.