公开(公告)号：US11844222B2

公开(公告)日：2023-12-12

申请号：US17146866

申请日：2021-01-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Shunsuke Takuma ,  Yuji Totoki ,  Seiji Shimabukuro ,  Tatsuya Hinoue ,  Kengo Kajiwara ,  Akihiro Tobioka

IPC: H10B43/50 ,  H01L23/522 ,  H01L23/00 ,  H10B41/27 ,  H10B41/50 ,  H10B43/27

CPC classification number: H10B43/50 ,  H01L23/5226 ,  H01L23/562 ,  H10B41/27 ,  H10B41/50 ,  H10B43/27

Abstract: At least one vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate. Rows of backside support pillar structures are formed through the at least one vertically alternating sequence. Memory stack structures are formed through the at least one vertically alternating sequence. A two-dimensional array of discrete backside trenches is formed through the at least one vertically alternating sequence. Contiguous combinations of a subset of the backside trenches and a subset of the backside support pillar structures divide the at least one vertically alternating sequence into alternating stacks of insulating layers and sacrificial material layers. The sacrificial material layers are replaced with electrically conductive layers while the backside support pillar structures provide structural support to the insulating layers.

公开(公告)号：US20180024375A1

公开(公告)日：2018-01-25

申请号：US15724488

申请日：2017-10-04

Applicant: SanDisk Technologies LLC

Inventor： Akihiro Tobioka

IPC: G02B27/32 ,  G02B5/02 ,  G03F7/20 ,  G03F1/44

CPC classification number: G02B27/32 ,  G02B5/0278 ,  G03F1/44 ,  G03F7/70641

Abstract: A reticle for a semiconductor lithography process includes a glass plate having regions with a reduced optical transmission factor. The regions may include arrays of elements comprising defects such as cracks or voids which are formed by laser pulses. The regions may be adjacent to openings in an opaque material at the bottom of the reticle to shield the openings from a portion of the light which illuminates the reticle from the top. As a result, the light which exits the reticle and is used to pattern a substrate has an asymmetric intensity. This allows the substrate to be patterned with an inspection mark which indicates whether a defocus condition exists, and whether there is a positive or negative defocus condition. Related methods use a reticle to form a pattern on a substrate and for adjusting a focus condition using a reticle.