公开(公告)号：US10700093B1

公开(公告)日：2020-06-30

申请号：US16227889

申请日：2018-12-20

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Alan Kalitsov ,  Derek Stewart ,  Daniel Bedau ,  Gerardo Bertero

IPC: G11C11/22 ,  H01L27/11585 ,  H01L29/417 ,  H01L29/51 ,  H01L29/778 ,  H01L21/28

Abstract: A ferroelectric memory device contains a two-dimensional semiconductor material layer having a band gap of at least 1.1 eV and at least one of a thickness of 1 to 5 monolayers of atoms of the semiconductor material or includes a two-dimensional charge carrier gas layer, a source contact contacting a first portion of the two-dimensional semiconductor material layer, a drain contact contacting a second portion of the two-dimensional semiconductor material layer, a ferroelectric memory element located between the source and drain contacts and adjacent to a first surface of the two-dimensional semiconductor material layer, and a conductive gate electrode located adjacent to the ferroelectric memory element.