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    THIN FILMS HAVING LARGE TEMPERATURE COEFFICIENT OF RESISTANCE AND METHODS OF FABRICATING SAME
    11.
    发明申请
    THIN FILMS HAVING LARGE TEMPERATURE COEFFICIENT OF RESISTANCE AND METHODS OF FABRICATING SAME 有权
    具有较大温度系数的薄膜及其制造方法

    公开(公告)号：US20140146856A1

    公开(公告)日：2014-05-29

    申请号：US13687445

    申请日：2012-11-28

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Wei Tian ,  Declan Macken ,  Huaqing Yin ,  Venkateswara Rao Inturi ,  Eric Walter Singleton

    IPC: G01K7/16 ,  C23C14/06

    CPC classification number: G01K7/16 ,  C23C14/06 ,  G11B5/607 ,  H01C7/006 ,  H01C7/008 ,  H01C7/021 ,  H01C7/06

    Abstract: An apparatus comprises a head transducer and a resistive temperature sensor provided on the head transducer. The resistive temperature sensor comprises a first layer comprising a conductive material and having a temperature coefficient of resistance (TCR) and a second layer comprising at least one of a specular layer and a seed layer. A method is disclosed to fabricate such sensor with a laminated thin film structure to achieve a large TCR. The thicknesses of various layers in the laminated thin film are in the range of few to a few tens of nanometers. The combinations of the deliberately optimized multilayer thin film structures and the fabrication of such films at the elevated temperatures are disclosed to obtain the large TCR.

    Abstract translation: 一种装置包括头部换能器和设置在头部换能器上的电阻式温度传感器。 电阻温度传感器包括包含导电材料并具有温度系数电阻（TCR）的第一层和包括镜面层和晶种层中的至少一个的第二层。 公开了一种制造具有层压薄膜结构的这种传感器以实现大TCR的方法。 层压薄膜中各层的厚度在几十纳米的范围内。 公开了故意优化的多层薄膜结构和在升高的温度下制备这种薄膜的组合以获得大的TCR。

    DEVICES INCLUDING TANTALUM ALLOY LAYERS
    12.
    发明申请
    DEVICES INCLUDING TANTALUM ALLOY LAYERS 审中-公开
    包括钨合金层的装置

    公开(公告)号：US20130341743A1

    公开(公告)日：2013-12-26

    申请号：US13755072

    申请日：2013-01-31

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Eric Walter Singleton ,  Liwen Tan ,  Jae-Young Yi

    IPC: H01L43/02

    CPC classification number: H01L43/02 ,  G01R33/098

    Abstract: A device that includes a sensor stack, the sensor stack including a reference layer, a free layer and a barrier layer positioned between the reference layer and the free layer; a seed layer; and a cap layer, wherein the sensor stack is positioned between the seed layer and the cap layer, and wherein at least one of the seed layer or the cap layer includes TaX, wherein X is selected from Cr, V, Ti, Zr, Nb, Mo, Hf, W, or a combination thereof.

    Abstract translation: 一种包括传感器堆叠的装置，所述传感器堆叠包括参考层，自由层和位于所述参考层和所述自由层之间的阻挡层; 种子层; 以及盖层，其中所述传感器堆叠位于所述种子层和所述盖层之间，并且其中所述种子层或所述盖层中的至少一个包括TaX，其中X选自Cr，V，Ti，Zr，Nb ，Mo，Hf，W或其组合。

    Magnetic element side shield with diffusion barrier
    15.
    发明授权
    Magnetic element side shield with diffusion barrier 有权
    具有扩散屏障的磁性元件侧屏蔽

    公开(公告)号：US08995096B2

    公开(公告)日：2015-03-31

    申请号：US13844810

    申请日：2013-03-16

    Applicant: Seagate Technology LLC

    Inventor： Shaun Eric McKinlay ,  Eric Walter Singleton

    IPC: G11B5/39 ,  G11B5/11

    CPC classification number: G11B5/112 ,  G11B5/3912 ,  G11B5/3932 ,  Y10T29/49032

    Abstract: Various embodiments may position a side shield adjacent to and separated from a stack sidewall of a magnetic stack with the side shield having a shield layer disposed between the stack sidewall and a permanent magnet. The permanent magnet can be separated from a first portion of the shield layer by a diffusion barrier that decouples the permanent magnet from the shield layer.

    Abstract translation: 各种实施例可以将侧屏蔽件定位成与磁性堆叠件的堆叠侧壁相邻并与之分离，其中侧屏蔽件具有设置在堆叠侧壁和永磁体之间的屏蔽层。 永磁体可以通过使永磁体与屏蔽层分离的扩散阻挡层与屏蔽层的第一部分分离。

    MAGNETIC SIDE SHIELD WITH DIFFUSION BARRIER
    18.
    发明申请
    MAGNETIC SIDE SHIELD WITH DIFFUSION BARRIER 有权
    带扩张障碍物的磁性边界

    公开(公告)号：US20140268418A1

    公开(公告)日：2014-09-18

    申请号：US13844810

    申请日：2013-03-16

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Shaun Eric McKinlay ,  Eric Walter Singleton

    IPC: H05K9/00 ,  G11B5/11

    CPC classification number: G11B5/112 ,  G11B5/3912 ,  G11B5/3932 ,  Y10T29/49032

    Abstract: Various embodiments may position a side shield adjacent to and separated from a stack sidewall of a magnetic stack with the side shield having a shield layer disposed between the stack sidewall and a permanent magnet. The permanent magnet can be separated from a first portion of the shield layer by a diffusion barrier that decouples the permanent magnet from the shield layer.

    Abstract translation: 各种实施例可以将侧屏蔽件定位成与磁性堆叠件的堆叠侧壁相邻并与之分离，其中侧屏蔽件具有设置在堆叠侧壁和永磁体之间的屏蔽层。 永磁体可以通过使永磁体与屏蔽层分离的扩散阻挡层与屏蔽层的第一部分分离。

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