DEVICES INCLUDING A MULTILAYER GAS BARRIER LAYER
    12.
    发明申请
    DEVICES INCLUDING A MULTILAYER GAS BARRIER LAYER 有权
    装置包括多层气体障碍层

    公开(公告)号:US20160133278A1

    公开(公告)日:2016-05-12

    申请号:US14918694

    申请日:2015-10-21

    Abstract: Devices that include a near field transducer (NFT); a multilayer gas barrier layer positioned on at least a portion of the NFT, the multilayer gas barrier layer including at least a first and a second sublayer, where the second gas barrier sublayer is positioned on the first gas barrier sublayer, the first gas barrier sublayer is positioned adjacent the NFT and the second gas barrier sublayer is positioned adjacent the wear resistant layer, the first and second sublayers independently have thicknesses from 0.01 nm to 5 nm; and a wear resistance layer positioned on at least a portion of the gas barrier layer.

    Abstract translation: 包括近场传感器(NFT)的设备; 位于所述NFT的至少一部分上的多层阻气层,所述多层阻气层至少包括第一和第二子层,其中所述第二阻气层位于所述第一阻气层上,所述第一阻气层 位于NFT附近并且第二阻气层位于耐磨层附近,第一和第二子层独立地具有0.01nm至5nm的厚度; 以及位于所述阻气层的至少一部分上的耐磨层。

    Devices including a multilayer gas barrier layer
    17.
    发明授权
    Devices including a multilayer gas barrier layer 有权
    装置包括多层阻气层

    公开(公告)号:US09552833B2

    公开(公告)日:2017-01-24

    申请号:US14918694

    申请日:2015-10-21

    Abstract: Devices that include a near field transducer (NFT); a multilayer gas barrier layer positioned on at least a portion of the NFT, the multilayer gas barrier layer including at least a first and a second sublayer, where the second gas barrier sublayer is positioned on the first gas barrier sublayer, the first gas barrier sublayer is positioned adjacent the NFT and the second gas barrier sublayer is positioned adjacent the wear resistant layer, the first and second sublayers independently have thicknesses from 0.01 nm to 5 nm; and a wear resistance layer positioned on at least a portion of the gas barrier layer.

    Abstract translation: 包括近场传感器(NFT)的设备; 位于所述NFT的至少一部分上的多层阻气层,所述多层阻气层至少包括第一和第二子层,其中所述第二阻气层位于所述第一阻气层上,所述第一阻气层 位于NFT附近并且第二阻气层位于耐磨层附近,第一和第二子层独立地具有0.01nm至5nm的厚度; 以及位于所述阻气层的至少一部分上的耐磨层。

    RECORDING HEAD STRUCTURE
    20.
    发明申请
    RECORDING HEAD STRUCTURE 有权
    记录头结构

    公开(公告)号:US20150146505A1

    公开(公告)日:2015-05-28

    申请号:US14092675

    申请日:2013-11-27

    Abstract: Implementations disclosed herein provide a transducer head including a writer feature extending to a transducer head surface, the transducer head surface being configured to face a storage medium surface; and a bumper structure configured on the transducer head surface, the bumper structure configured to be proximal to the writer feature and to protrude beyond the writer feature in response to energy.

    Abstract translation: 本发明的实施例提供一种换能器头,其包括延伸到换能器头表面的写入器特征,所述换能器头表面配置为面对存储介质表面; 以及保险杠结构,构造在所述换能器头表面上,所述保险杠结构被配置为接近所述笔记器特征并且响应于能量突出超过所述写入器特征。

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