公开(公告)号：US20210313453A1

公开(公告)日：2021-10-07

申请号：US16841167

申请日：2020-04-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed T. QUDDUS ,  Mihir MUDHOLKAR ,  Ali SALIH

IPC: H01L29/66 ,  H01L29/872 ,  H01L29/423 ,  H01L29/812 ,  H01L21/762

Abstract: A semiconductor device structure comprises a region of semiconductor material comprising a first conductivity type, a first major surface, and a second major surface opposite to the first major surface. A first trench gate structure includes a first trench extending from the first major surface into the region of semiconductor material, a first dielectric structure is over sidewall surfaces and a portion of a lower surface of the first trench, wherein the first dielectric structure comprises a first opening adjacent to the lower surface of the first trench, a first recessed contact extends through the first opening, and a first contact region is over the first recessed contact within the first trench, wherein the first recessed contact and the first contact region comprise different materials. A first doped region comprising a second dopant conductivity type opposite to the first conductivity type is in the region of semiconductor material and is spaced apart from the first major surface and below the first trench. A gate contact region is in the region of semiconductor material and is electrically connected to the first doped region.

公开(公告)号：US20200185543A1

公开(公告)日：2020-06-11

申请号：US16789499

申请日：2020-02-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed Tanvir QUDDUS ,  Mihir MUDHOLKAR ,  Jefferson W. HALL

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/47 ,  H01L27/07 ,  H01L27/095 ,  H01L29/66 ,  H01L27/02

Abstract: A method for manufacturing a semiconductor component includes forming first mesa and second mesa structures from a semiconductor material by etching trenches into the semiconductor material. A doped region having a multi-concentration dopant profile is formed in at least the first mesa structure and doped polysilicon is formed in the trenches. The trenches are formed in a geometric pattern. A contact having three contact types is formed, wherein a first contact type is formed to the first mesa structure, a second contact type is formed to the second mesa structure, and a third contact type is formed to the doped polysilicon in the trenches. The first contact type has electrical properties between a conventional Schottky contact and a conventional Ohmic contact without being a conventional Schottky contact or a conventional Ohmic contact, the second contact type is a Schottky contact, the third contact type is an Ohmic contract.

公开(公告)号：US20200044027A1

公开(公告)日：2020-02-06

申请号：US16053400

申请日：2018-08-02

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Michael THOMASON ,  Mohammed T. QUDDUS ,  Mihir MUDHOLKAR

IPC: H01L29/08 ,  H01L29/47 ,  H01L29/872 ,  H01L21/04 ,  H01L21/285

Abstract: A method for forming a semiconductor device includes providing a region of semiconductor material. The method includes providing a trench structure having a trench extending into the region of semiconductor material from a first major surface, and a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region. The method includes providing a Schottky contact region disposed adjacent to the first major surface and adjacent to the trench structure. In one example, providing the Schottky contact region comprises forming a first layer of material consisting essentially of titanium and having a first thickness; forming a second layer of material disposed adjacent to the first layer of material consisting essentially of nickel-platinum and having a second thickness; annealing the first layer of material and the second layer of material; and after the step of annealing, removing any unreacted portions of the first layer of material and the second layer of material. In another example, providing the Schottky contact region comprises providing a layer of material consisting essentially of nickel-chrome.

公开(公告)号：US20190288125A1

公开(公告)日：2019-09-19

申请号：US15919475

申请日：2018-03-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed Tanvir QUDDUS ,  Mihir MUDHOLKAR ,  Jefferson W. HALL

IPC: H01L29/872 ,  H01L27/02 ,  H01L27/07 ,  H01L27/095 ,  H01L29/66

Abstract: A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalls and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed in at least one trench, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the dope region with the multi-concentration impurity profile.

公开(公告)号：US20190237588A1

公开(公告)日：2019-08-01

申请号：US15883500

申请日：2018-01-30

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mihir MUDHOLKAR ,  Mohammed T. QUDDUS ,  Ikhoon SHIN ,  Scott M. DONALDSON

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/872 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/401 ,  H01L29/404 ,  H01L29/407 ,  H01L29/66143

Abstract: A semiconductor device includes a region of semiconductor material having first and second opposing major surfaces. A trench structure includes a trench extending into the region of semiconductor material from the first major surface, wherein the first major surface defines a first horizontal plane in a cross-sectional view. The trench structure further includes a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region. A Schottky contact region is disposed adjacent the first major surface on opposing sides of the trench structure, the Schottky contact region having an upper surface residing on a second horizontal plane in the cross-sectional view. The dielectric region comprises an uppermost surface and configured such that a major portion of the uppermost surface is disposed above the first horizontal plane in the cross-sectional view. The structure and method provide a semiconductor device with improved performance (e.g., reduced leakage and more stable breakdown voltage) and improved reliability.